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Kenji Nomura
Kenji Nomura
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Title
Cited by
Cited by
Year
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono
nature 432 (7016), 488-492, 2004
87192004
Amorphous Oxide And Thin Film Transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 10/592,431, 2007
39132007
Display
H Kumomi, H Hosono, T Kamiya, K Nomura
US Patent 7,791,072, 2010
38242010
Integrated circuits utilizing amorphous oxides
K Abe, H Hosono, T Kamiya, K Nomura
US Patent 7,863,611, 2011
37962011
Light-emitting device
T Den, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent 7,872,259, 2011
37922011
Amorphous oxide and field effect transistor
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent App. 11/269,600, 2006
37872006
Field effect transistor
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent 7,868,326, 2011
37782011
Field effect transistor manufacturing method
H Yabuta, M Sano, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent 7,829,444, 2010
37742010
Sensor and image pickup device
K Saito, H Hosono, T Kamiya, K Nomura
US Patent 7,453,065, 2008
37572008
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent 10,032,930, 2018
37322018
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 12/504,158, 2009
37292009
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono
Science 300 (5623), 1269-1272, 2003
30612003
Present status of amorphous In–Ga–Zn–O thin-film transistors
T Kamiya, K Nomura, H Hosono
Science and Technology of Advanced Materials, 2010
21472010
Amorphous oxide semiconductors for high-performance flexible thin-film transistors
K Nomura, A Takagi, T Kamiya, H Ohta, M Hirano, H Hosono
Japanese journal of applied physics 45 (5S), 4303, 2006
15022006
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
H Yabuta, M Sano, K Abe, T Aiba, T Den, H Kumomi, K Nomura, T Kamiya, ...
Applied physics letters 89 (11), 2006
14322006
Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3
H Ohta, SW Kim, Y Mune, T Mizoguchi, K Nomura, S Ohta, T Nomura, ...
Nature materials 6 (2), 129-134, 2007
11482007
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3 (ZnO) 5 films
K Nomura, T Kamiya, H Ohta, K Ueda, M Hirano, H Hosono
Applied Physics Letters 85 (11), 1993-1995, 2004
9712004
Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent 7,601,984, 2009
9342009
Origins of high mobility and low operation voltage of amorphous oxide TFTs: Electronic structure, electron transport, defects and doping
T Kamiya, K Nomura, H Hosono
Journal of display Technology 5 (7), 273-288, 2009
9262009
p-channel thin-film transistor using p-type oxide semiconductor, SnO
Y Ogo, H Hiramatsu, K Nomura, H Yanagi, T Kamiya, M Hirano, H Hosono
Applied Physics Letters 93 (3), 2008
7732008
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Articles 1–20