| A new method for determining the FET small-signal equivalent circuit G Dambrine, A Cappy, F Heliodore, E Playez IEEE Transactions on microwave theory and techniques 36 (7), 1151-1159, 1988 | 1959 | 1988 |
| Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs G Larrieu, E Dubois, R Valentin, N Breil, F Danneville, G Dambrine, ... 2007 IEEE International Electron Devices Meeting, 147-150, 2007 | 276 | 2007 |
| 80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes L Nougaret, H Happy, G Dambrine, V Derycke, JP Bourgoin, AA Green, ... Applied Physics Letters 94 (24), 2009 | 218 | 2009 |
| Flexible gigahertz transistors derived from solution-based single-layer graphene C Sire, F Ardiaca, S Lepilliet, JWT Seo, MC Hersam, G Dambrine, ... Nano letters 12 (3), 1184-1188, 2012 | 173 | 2012 |
| A new method for on wafer noise measurement G Dambrine, H Happy, F Danneville, A Cappy IEEE Transactions on Microwave Theory and Techniques 41 (3), 375-381, 1993 | 149 | 1993 |
| Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors A Le Louarn, F Kapche, JM Bethoux, H Happy, G Dambrine, V Derycke, ... Applied physics letters 90 (23), 2007 | 146 | 2007 |
| What are the limiting parameters of deep-submicron MOSFETs for high frequency applications? G Dambrine, C Raynaud, D Lederer, M Dehan, O Rozeaux, ... IEEE Electron Device Letters 24 (3), 189-191, 2003 | 132 | 2003 |
| Gigahertz frequency flexible carbon nanotube transistors N Chimot, V Derycke, MF Goffman, JP Bourgoin, H Happy, G Dambrine Applied physics letters 91 (15), 2007 | 127 | 2007 |
| High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits G Dambrine, JP Raskin, F Danneville, DV Janvier, JP Colinge, A Cappy IEEE Transactions on Electron Devices 46 (8), 1733-1741, 1999 | 86 | 1999 |
| Microscopic noise modeling and macroscopic noise models: how good a connection?[FETs] F Danneville, H Happy, G Dambrine, JM Belquin, A Cappy IEEE transactions on electron devices 41 (5), 779-786, 1994 | 84 | 1994 |
| An 8-GHz f/sub t/carbon nanotube field-effect transistor for gigahertz range applications JM Bethoux, H Happy, G Dambrine, V Derycke, M Goffman, JP Bourgoin IEEE Electron Device Letters 27 (8), 681-683, 2006 | 81 | 2006 |
| Influence of the gate leakage current on the noise performance of MESFETs and MODFETs F Danneville, G Dambrine, H Happy, P Tadyszak, A Cappy Solid-state electronics 38 (5), 1081-1087, 1995 | 79 | 1995 |
| Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs JP Raskin, G Dambrine, R Gillon IEEE microwave and guided wave letters 7 (12), 408-410, 1997 | 64 | 1997 |
| High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates A Minko, V Hoel, S Lepilliet, G Dambrine, JC De Jaeger, Y Cordier, ... IEEE Electron Device Letters 25 (4), 167-169, 2004 | 63 | 2004 |
| Gigahertz characterization of a single carbon nanotube L Nougaret, G Dambrine, S Lepilliet, H Happy, N Chimot, V Derycke, ... Applied Physics Letters 96 (4), 2010 | 60 | 2010 |
| Measurement techniques for RF nanoelectronic devices: new equipment to overcome the problems of impedance and scale mismatch H Happy, K Haddadi, D Theron, T Lasri, G Dambrine IEEE Microwave Magazine 15 (1), 30-39, 2014 | 56 | 2014 |
| SiGe HBTs featuring fT ≫400GHz at room temperature B Geynet, P Chevalier, B Vandelle, F Brossard, N Zerounian, M Buczko, ... 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 121-124, 2008 | 53 | 2008 |
| High-frequency noise performance of 60-nm gate-length FinFETs JP Raskin, G Pailloncy, D Lederer, F Danneville, G Dambrine, ... IEEE transactions on electron devices 55 (10), 2718-2727, 2008 | 52 | 2008 |
| Fabrication and characterization of low-loss TFMS on silicon substrate up to 220 GHz G Six, G Prigent, E Rius, G Dambrine, H Happy IEEE Transactions on microwave theory and techniques 53 (1), 301-305, 2005 | 51 | 2005 |
| High-frequency performance of submicrometer channel-length silicon MOSFETs C Raynaud, J Gautier, G Guegan, M Lerme, E Playez, G Dambrine IEEE electron device letters 12 (12), 667-669, 1991 | 51 | 1991 |
