Characterizations of enhancement-mode double heterostructure GaN HEMTs with gate field plates CH Lee, WR Lin, YH Lee, J Huang IEEE Transactions on Electron Devices 65 (2), 488-492, 2018 | 25 | 2018 |
Gate Drivers Techniques and Solutions for GaN HEMTs in High Frequency Applications WR Lin, C Suarez, K Umetani, W Martinez 2020 IEEE 29th International Symposium on Industrial Electronics (ISIE), 712-716, 2020 | 7 | 2020 |
Characterization of Enhancement-Mode Asymmetrical GaN Transistor Half Bridge in High Frequency Operation WR Lin, U Chatterjee, W Martinez 2021 23rd European Conference on Power Electronics and Applications (EPE'21 …, 2021 | 4 | 2021 |
Iron Loss Evaluation of GaN PWM-Supplied Magnetic Cores for MHz Converters in More Electric Aircrafts-400Hz case W Martinez, C Suarez, WR Lin 2020 IEEE 29th International Symposium on Industrial Electronics (ISIE …, 2020 | 3 | 2020 |
EMC Implications of Implementing WBG Devices in Battery Charger Modules for Electric Vehicles W Martinez, WR Lin, C Suarez 2022 International Power Electronics Conference (IPEC-Himeji 2022-ECCE Asia …, 2022 | 2 | 2022 |