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Dmitri Osintsev
Dmitri Osintsev
TU Wien
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Predictive hot-carrier modeling of n-channel MOSFETs
M Bina, S Tyaginov, J Franco, K Rupp, Y Wimmer, D Osintsev, B Kaczer, ...
IEEE Transactions on Electron Devices 61 (9), 3103-3110, 2014
952014
Physical modeling of hot-carrier degradation for short-and long-channel MOSFETs
S Tyaginov, M Bina, J Franco, D Osintsev, O Triebl, B Kaczer, T Grasser
2014 IEEE International Reliability Physics Symposium, XT. 16.1-XT. 16.8, 2014
442014
A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs
S Tyaginov, M Bina, J Franco, Y Wimmer, D Osintsev, B Kaczer, T Grasser
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
242014
Subband splitting and surface roughness induced spin relaxation in (0 0 1) silicon SOI MOSFETs
D Osintsev, O Baumgartner, Z Stanojevic, V Sverdlov, S Selberherr
Solid-state electronics 90, 34-38, 2013
212013
Reduction of momentum and spin relaxation rate in strained thin silicon films
D Osintsev, V Sverdlov, S Selberherr
2013 Proceedings of the European Solid-State Device Research Conference …, 2013
132013
Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films
D Osintsev, V Sverdlov, S Selberherr
Solid-State Electronics 112, 46-50, 2015
92015
Fast switching in magnetic tunnel junctions with double barrier layer
A Makarov, V Sverdlov, D Osintsev, S Selberherr
Proc. SSDM, 456-457, 2011
82011
Properties of silicon ballistic spin fin-based field-effect transistors
D Osintsev, V Sverdlov, Z Stanojevic, A Makarov, J Weinbub, S Selberherr
ECS Transactions 35 (5), 277, 2011
72011
(Late) Essential ingredients for modeling of hot-carrier degradation in ultra-scaled MOSFETs
S Tyaginov, M Bina, J Franco, D Osintsev, Y Wimmer, B Kaczer, T Grasser
2013 IEEE International Integrated Reliability Workshop Final Report, 98-101, 2013
52013
Switching time and current reduction using a composite free layer in magnetic tunnel junctions
A Makarov, V Sverdlov, D Osintsev, S Selberherr
2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011
52011
Increasing mobility and spin lifetime with shear strain in thin silicon films
D Osintsev, V Sverdlov, T Windbacher, S Selberherr
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
22014
Modeling silicon spintronics
V Sverdlov, J Ghosh, D Osintsev, S Selberherr
proc. in Recent Advances in Mathematical Methods in Applied Sciences, 195-198, 2014
22014
Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach
D Osintsev, V Sverdlov, S Selberherr
Conference Proceedings of the Ninth Workshop of the Thematic Network on …, 2013
22013
Strain-induced reduction of surface roughness dominated spin relaxation in MOSFETs
D Osintsev, Z Stanojevic, O Baumgartner, V Sverdlov, S Selberherr
AIP Conference Proceedings 1566 (1), 317-318, 2013
12013
Spin lifetime enhancement by shear strain in thin silicon-on-insulator films
D Osintsev, V Sverdlov, S Selberherr
ECS Transactions 53 (5), 203, 2013
12013
Influence of the valley degeneracy on spin relaxation in thin silicon films
D Osintsev, V Sverdlov, S Selberherr
2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013
12013
Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors
D OSInTSE, A vIKTOr SvErDlOv, S SElBErhErr
Sains Malaysiana 42 (2), 205-211, 2013
12013
Transport properties of spin field-effect transistors built on Si and InAs
D Osintsev, V Sverdlov, Z Stanojević, A Makarov, S Selberherr
Ulis 2011 Ultimate Integration on Silicon, 1-4, 2011
12011
Micromagnetic modeling of penta-layer magnetic tunnel junctions with a composite soft layer
A Makarov, V Sverdlov, D Osintsev, S Selberherr
Proc. 2nd Advanced Workshop on Spin & Charge Properties of Low Dimensional …, 2011
12011
Silicon-on-insulator for spintronic applications: spin lifetime and electric spin manipulation
V Sverdlov, D Osintsev, S Selberherr
Physical Sciences Reviews 1 (5), 20160009, 2016
2016
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