| Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors TL Wu, D Marcon, S You, N Posthuma, B Bakeroot, S Stoffels, ... IEEE Electron device letters 36 (10), 1001-1003, 2015 | 194 | 2015 |
| Au-free AlGaN/GaN power diode on 8-in Si substrate with gated edge termination S Lenci, B De Jaeger, L Carbonell, J Hu, G Mannaert, D Wellekens, S You, ... IEEE Electron Device Letters 34 (8), 1035-1037, 2013 | 173 | 2013 |
| Analysis of the gate capacitance–voltage characteristics in p-GaN/AlGaN/GaN heterostructures TL Wu, B Bakeroot, H Liang, N Posthuma, S You, N Ronchi, S Stoffels, ... IEEE Electron Device Letters 38 (12), 1696-1699, 2017 | 90 | 2017 |
| Analytical Model for the Threshold Voltage of -(Al)GaN High-Electron-Mobility Transistors B Bakeroot, A Stockman, N Posthuma, S Stoffels, S Decoutere IEEE Transactions on Electron Devices 65 (1), 79-86, 2017 | 89 | 2017 |
| Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors A Stockman, F Masin, M Meneghini, E Zanoni, G Meneghesso, ... IEEE Transactions on Electron Devices 65 (12), 5365-5372, 2018 | 83 | 2018 |
| Performance optimization of Au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate J Hu, S Stoffels, S Lenci, B Bakeroot, B De Jaeger, M Van Hove, N Ronchi, ... IEEE Transactions on Electron Devices 63 (3), 997-1004, 2016 | 79 | 2016 |
| GaN-on-SOI: Monolithically integrated all-GaN ICs for power conversion X Li, N Amirifar, K Geens, M Zhao, W Guo, H Liang, S You, N Posthuma, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2019 | 78 | 2019 |
| On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors B Bakeroot, S You, TL Wu, J Hu, M Van Hove, B De Jaeger, K Geens, ... Journal of Applied Physics 116 (13), 2014 | 75 | 2014 |
| Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors TL Wu, D Marcon, B Bakeroot, B De Jaeger, HC Lin, J Franco, S Stoffels, ... Applied Physics Letters 107 (9), 2015 | 74 | 2015 |
| Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs TL Wu, J Franco, D Marcon, B De Jaeger, B Bakeroot, S Stoffels, ... IEEE Transactions on Electron Devices 63 (5), 1853-1860, 2016 | 70 | 2016 |
| Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs TL Wu, D Marcon, B De Jaeger, M Van Hove, B Bakeroot, S Stoffels, ... 2015 IEEE International Reliability Physics Symposium, 6C. 4.1-6C. 4.6, 2015 | 66 | 2015 |
| Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization X Li, B Bakeroot, Z Wu, N Amirifar, S You, N Posthuma, M Zhao, H Liang, ... IEEE Electron Device Letters 41 (4), 577-580, 2020 | 59 | 2020 |
| Failure mode for p-GaN gates under forward gate stress with varying Mg concentration S Stoffels, B Bakeroot, TL Wu, D Marcon, NE Posthuma, S Decoutere, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 4B-4.1-4B-4.9, 2017 | 58 | 2017 |
| Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects YS Chauhan, C Anghel, F Krummenacher, C Maier, R Gillon, B Bakeroot, ... Solid-state electronics 50 (11-12), 1801-1813, 2006 | 58 | 2006 |
| On the origin of the leakage current in p-gate AlGaN/GaN HEMTs A Stockman, E Canato, A Tajalli, M Meneghini, G Meneghesso, E Zanoni, ... 2018 IEEE international reliability physics symposium (IRPS), 4B. 5-1-4B. 5-4, 2018 | 53 | 2018 |
| Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs A Stockman, E Canato, M Meneghini, G Meneghesso, P Moens, ... 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 52 | 2019 |
| Compact modeling of lateral nonuniform doping in high-voltage MOSFETs YS Chauhan, F Krummenacher, R Gillon, B Bakeroot, MJ Declercq, ... IEEE Transactions on Electron Devices 54 (6), 1527-1539, 2007 | 51 | 2007 |
| TCAD methodology for simulation of GaN-HEMT power devices S Strauss, A Erlebach, T Cilento, D Marcon, S Stoffels, B Bakeroot 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 49 | 2014 |
| Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination J Hu, S Stoffels, S Lenci, B De Jaeger, N Ronchi, AN Tallarico, ... IEEE Transactions on Electron Devices 63 (9), 3451-3458, 2016 | 45 | 2016 |
| The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate TL Wu, D Marcon, B De Jaeger, M Van Hove, B Bakeroot, D Lin, S Stoffels, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 45 | 2015 |
Tian-Li Wu 吳添立National Yang Ming Chiao Tung UniversityVerified email at nycu.edu.tw
