Belyaev A.E.
Belyaev A.E.
Institute of semiconductor physics
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Au-TiB x -n-6H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts
OA Ageev, AE Belyaev, NS Boltovets, VN Ivanov, RV Konakova, ...
Semiconductors 43, 865-871, 2009
Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers
A Belyaev, O Polupan, W Dallas, S Ostapenko, D Hess, J Wohlgemuth
Applied physics letters 88 (11), 2006
Карбид кремния: технология, свойства, применение
ОА Агеев, АЕ Беляев, НС Болтовец, ВС Киселев, РВ Конакова, ...
ИСМа, 2010
Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs
SA Vitusevich, N Klein, AE Belyaev, SV Danylyuk, MV Petrychuk, ...
physica status solidi (a) 195 (1), 101-105, 2003
Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels
SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, AY Avksentyev, ...
Applied physics letters 82 (5), 748-750, 2003
Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants
O Gryshkov, NI Klyui, VP Temchenko, VS Kyselov, A Chatterjee, ...
Materials Science and Engineering: C 68, 143-152, 2016
Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕ GaN heterostructures under small dose gamma irradiation
AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ...
Journal of applied physics 103 (8), 2008
Resonance ultrasonic vibration diagnostics of elastic stress in full-size silicon wafers
A Belyaev, O Polupan, S Ostapenko, D Hess, JP Kalejs
Semiconductor Science and Technology 21 (3), 254, 2006
Mechanism of contact resistance formation in ohmic contacts with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ...
Journal of applied physics 111 (8), 2012
Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures
CT Foxon, SV Novikov, AE Belyaev, LX Zhao, O Makarovsky, DJ Walker, ...
physica status solidi (c), 2389-2392, 2003
Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures
AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ...
Journal of applied physics 105 (7), 2009
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ...
Nanoscale research letters 7, 1-9, 2012
Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate
VP Kladko, AF Kolomys, MV Slobodian, VV Strelchuk, VG Raycheva, ...
Journal of applied physics 105 (6), 2009
Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors
SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, VN Sokolov, ...
Applied physics letters 80 (12), 2126-2128, 2002
Фазы внедрения в технологии полупроводниковых приборов и СБИС
ОА Агеев, АЕ Беляев, НС Болтовец, РВ Конакова, ВВ Миленин, ...
Харьков: НТК «Институт монокристаллов, 2008
AlGaN/GaN high electron mobility transistor structures: self-heating effect and performance degradation
SA Vitusevich, AM Kurakin, N Klein, MV Petrychuk, AV Naumov, ...
IEEE transactions on device and materials reliability 8 (3), 543-548, 2008
Resonance and current instabilities in AlN/GaN resonant tunnelling diodes
AE Belyaev, O Makarovsky, DJ Walker, L Eaves, CT Foxon, SV Novikov, ...
Physica E: low-dimensional systems and nanostructures 21 (2-4), 752-755, 2004
Noise and transport characterization of single molecular break junctions with individual molecule
VA Sydoruk, D Xiang, SA Vitusevich, MV Petrychuk, A Vladyka, Y Zhang, ...
Journal of applied physics 112 (1), 2012
Mechanism of dislocation-governed charge transport in Schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductors 42, 689-693, 2008
Nonlinear charging effect of quantum dots in a p− i− n diode
G Kießlich, A Wacker, E Schöll, SA Vitusevich, AE Belyaev, SV Danylyuk, ...
Physical Review B 68 (12), 125331, 2003
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