Xue-Peng Wang (王雪鹏)
Xue-Peng Wang (王雪鹏)
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Continuous transition from double-layer to Faradaic charge storage in confined electrolytes
S Fleischmann, Y Zhang, X Wang, PT Cummings, J Wu, P Simon, ...
Nature Energy 7 (3), 222-228, 2022
Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization
XB Li, NK Chen, XP Wang, HB Sun
Advanced Functional Materials 28 (44), 1803380, 2018
Highly Efficient Three Primary Color Organic Single‐Crystal Light‐Emitting Devices with Balanced Carrier Injection and Transport
R Ding, J Feng, FX Dong, W Zhou, Y Liu, XL Zhang, XP Wang, HH Fang, ...
Advanced Functional Materials 27 (13), 1604659, 2017
High‐throughput screening for phase‐change memory materials
YT Liu, XB Li, H Zheng, NK Chen, XP Wang, XL Zhang, HB Sun, S Zhang
Advanced Functional Materials 31 (21), 2009803, 2021
Clarification of the Molecular Doping Mechanism in Organic Single‐Crystalline Semiconductors and their Application in Color‐Tunable Light‐Emitting Devices
R Ding, XP Wang, J Feng, XB Li, FX Dong, WQ Tian, JR Du, HH Fang, ...
Advanced Materials 30 (43), 1801078, 2018
Vacancy structures and melting behavior in rock-salt GeSbTe
B Zhang, XP Wang, ZJ Shen, XB Li, CS Wang, YJ Chen, JX Li, JX Zhang, ...
Scientific reports 6, 25453, 2016
Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage
YT Huang, NK Chen, ZZ Li, XP Wang, HB Sun, S Zhang, XB Li
InfoMat 4 (8), e12341, 2022
Electric field analyses on monolayer semiconductors: the example of InSe
XP Wang, XB Li, NK Chen, JH Zhao, QD Chen, HB Sun
Physical Chemistry Chemical Physics 20 (10), 6945-6950, 2018
High‐color‐rendering and high‐efficiency white organic light‐emitting devices based on double‐doped organic single crystals
R Ding, FX Dong, MH An, XP Wang, MR Wang, XB Li, J Feng, HB Sun
Advanced Functional Materials 29 (12), 1807606, 2019
Directional forces by momentumless excitation and order-to-order transition in peierls-distorted solids: the case of GeTe
NK Chen, XB Li, J Bang, XP Wang, D Han, D West, S Zhang, HB Sun
Physical Review Letters 120 (18), 185701, 2018
Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization
NK Chen, XB Li, XP Wang, MJ Xia, SY Xie, HY Wang, Z Song, S Zhang, ...
Acta Materialia 90, 88-93, 2015
Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory
XP Wang, XB Li, NK Chen, QD Chen, XD Han, S Zhang, HB Sun
Acta Materialia 136, 242-248, 2017
Black silicon IR photodiode supersaturated with nitrogen by femtosecond laser irradiation
CH Li, XP Wang, JH Zhao, DZ Zhang, XY Yu, XB Li, J Feng, QD Chen, ...
IEEE Sensors Journal 18 (9), 3595-3601, 2018
Metal–insulator transition of Ge–Sb–Te superlattice: an electron counting model study
NK Chen, XB Li, XP Wang, SY Xie, WQ Tian, S Zhang, HB Sun
IEEE Transactions on Nanotechnology 17 (1), 140-146, 2017
Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3
XP Wang, XB Li, NK Chen, B Chen, F Rao, S Zhang
Advanced Science 8 (13), 2004185, 2021
Hexagonal BN‐assisted epitaxy of strain released GaN films for true green light‐emitting diodes
F Liu, Y Yu, Y Zhang, X Rong, T Wang, X Zheng, B Sheng, L Yang, J Wei, ...
Advanced Science 7 (21), 2000917, 2020
Strong electron-polarized atom chain in amorphous phase-change memory GeSbTe alloy
NK Chen, XB Li, XP Wang, WQ Tian, S Zhang, HB Sun
Acta Materialia 143, 102-106, 2018
Demystifying the Stern layer at a metal–electrolyte interface: Local dielectric constant, specific ion adsorption, and partial charge transfer
X Wang, K Liu, J Wu
The Journal of Chemical Physics 154 (12), 2021
Role of the nano amorphous interface in the crystallization of Sb 2 Te 3 towards non-volatile phase change memory: Insights from first principles
XP Wang, NK Chen, XB Li, Y Cheng, XQ Liu, MJ Xia, ZT Song, XD Han, ...
Physical Chemistry Chemical Physics 16 (22), 10810-10815, 2014
Mexican-hat potential energy surface in two-dimensional III2-VI3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase change
YT Huang, NK Chen, ZZ Li, XB Li, XP Wang, QD Chen, HB Sun, S Zhang
Applied Physics Reviews 8 (3), 2021
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