| Graphene nucleation density on copper: fundamental role of background pressure I Vlassiouk, S Smirnov, M Regmi, SP Surwade, N Srivastava, R Feenstra, ... The Journal of Physical Chemistry C 117 (37), 18919-18926, 2013 | 236 | 2013 |
| Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces N Srivastava, G He, RM Feenstra, PJ Fisher Physical Review B 82 (23), 235406, 2010 | 133 | 2010 |
| Low-energy electron reflectivity from graphene RM Feenstra, N Srivastava, Q Gao, M Widom, B Diaconescu, T Ohta, ... Physical Review B 87 (4), 041406, 2013 | 112 | 2013 |
| Graphene formed on SiC under various environments: comparison of Si-face and C-face N Srivastava, G He, PC Mende, RM Feenstra, Y Sun Journal of Physics D: Applied Physics 45 (15), 154001, 2012 | 84 | 2012 |
| Low-energy electron reflectivity of graphene on copper and other substrates N Srivastava, Q Gao, M Widom, RM Feenstra, S Nie, KF McCarty, ... Physical Review B 87 (24), 245414, 2013 | 63 | 2013 |
| Formation of epitaxial graphene on SiC (0001) using vacuum or argon environments Luxmi, N Srivastava, RM Feenstra, PJ Fisher Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010 | 46 | 2010 |
| Y. Sun, J. Kedzierski, P. Healey, and G. Gu PJ Luxmi, NS Fisher, F RM Appl. Phys. Lett 95, 073101, 2009 | 36 | 2009 |
| Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies KM Daniels, BK Daas, N Srivastava, C Williams, RM Feenstra, ... Journal of Applied Physics 111 (11), 114306, 2012 | 31 | 2012 |
| Luxmi, and RM Feenstra N Srivastava, G He Phys. Rev. B 85 (041), 404, 2012 | 30 | 2012 |
| Morphology of graphene on surfaces Luxmi, PJ Fisher, N Srivastava, RM Feenstra, Y Sun, J Kedzierski, ... Applied Physics Letters 95 (7), 073101, 2009 | 25 | 2009 |
| Thickness monitoring of graphene on SiC using low-energy electron diffraction PJ Fisher, Luxmi, N Srivastava, S Nie, RM Feenstra Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (4 …, 2010 | 23 | 2010 |
| Formation of a Buffer Layer for Graphene on C-face SiC {0001} G He, N Srivastava, RM Feenstra Journal of Electronic Materials, 2014 | 11 | 2014 |
| Interface structure of graphene on SiC(000) N Srivastava, G He, RM Feenstra Physical Review B 85 (4), 041404, 2012 | 11 | 2012 |
| The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics G Gu, PJ Fisher, N Srivastava, RM Feenstra Solid state communications 149 (47-48), 2194-2198, 2009 | 9 | 2009 |
| Evidence of electrochemical graphene functionalization by Raman spectroscopy KM Daniels, BK Daas, N Srivastava, C Williams, RM Feenstra, ... Materials Science Forum 717, 661-664, 2012 | 5 | 2012 |
| Formation of graphene on SiC() surfaces in disilane and neon environments G He, N Srivastava, RM Feenstra Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012 | 4 | 2012 |
| Interface structure of graphene on SiC for various preparation conditions N Srivastava Carnegie Mellon University, 2012 | 2 | 2012 |
| Graphene on Carbon-Face SiС {0001} Surfaces Formed in a Disilane Environment N Srivastava, GW He, RM Feenstra Materials Science Forum 717, 609-612, 2012 | 2 | 2012 |
| Low-Energy Electron Reflectivity of Two-dimensional Materials Q Gao, P Mende, N Srivastava, M Widom, R Feenstra Bulletin of the American Physical Society 59, 2014 | | 2014 |
| Theory of low-energy electron reflectivity from graphene R Feenstra, N Srivastava, M Widom, I Vlassiouk APS March Meeting Abstracts 2013, U6. 011, 2013 | | 2013 |
