| Flash memory cells-an overview P Pavan, R Bez, P Olivo, E Zanoni Proceedings of the IEEE 85 (8), 1248-1271, 1997 | 1061 | 1997 |
| NROM: A novel localized trapping, 2-bit nonvolatile memory cell B Eitan, P Pavan, I Bloom, E Aloni, A Frommer, D Finzi IEEE Electron Device Letters 21 (11), 543-545, 2000 | 881 | 2000 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 574 | 2019 |
| Can NROM, a 2 bit, trapping storage NVM cell, give a real challenge to floating gate cells? B Eitan, P Pavan, I Bloom, E Aloni, A Frommer SSDM 100, 522-524, 1999 | 212 | 1999 |
| Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells L Larcher, G Verzellesi, P Pavan, E Lusky, I Bloom, B Eitan IEEE Transactions on Electron Devices 49 (11), 1939-1946, 2002 | 148 | 2002 |
| A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State FM Puglisi, L Larcher, A Padovani, P Pavan IEEE Transactions on Electron Devices 62 (8), 2606-2613, 2015 | 123 | 2015 |
| A solar energy harvesting circuit for low power applications D Dondi, A Bertacchini, L Larcher, P Pavan, D Brunelli, L Benini 2008 IEEE International Conference on Sustainable Energy Technologies, 945-949, 2008 | 120 | 2008 |
| NROMTM––a new technology for non-volatile memory products I Bloom, P Pavan, B Eitan Solid-State Electronics 46 (11), 1757-1763, 2002 | 111 | 2002 |
| Carbon-doped GeTe: a promising material for phase-change memories GB Beneventi, L Perniola, V Sousa, E Gourvest, S Maitrejean, JC Bastien, ... Solid-State Electronics 65, 197-204, 2011 | 97 | 2011 |
| Photovoltaic cell modeling for solar energy powered sensor networks D Dondi, D Brunelli, L Benini, P Pavan, A Bertacchini, L Larcher 2007 2nd international workshop on advances in sensors and interface, 1-6, 2007 | 91 | 2007 |
| A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis L Larcher, FM Puglisi, P Pavan, A Padovani, L Vandelli, G Bersuker IEEE Transactions on Electron Devices 61 (8), 2668-2673, 2014 | 87 | 2014 |
| An empirical model for RRAM resistance in low-and high-resistance states FM Puglisi, L Larcher, G Bersuker, A Padovani, P Pavan IEEE Electron Device Letters 34 (3), 387-389, 2013 | 86 | 2013 |
| Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices L Vandelli, A Padovani, L Larcher, G Broglia, G Ori, M Montorsi, ... 2011 International Electron Devices Meeting, 17.5. 1-17.5. 4, 2011 | 86 | 2011 |
| Floating gate devices: operation and compact modeling P Pavan, L Larcher, A Marmiroli Springer Science & Business Media, 2007 | 86 | 2007 |
| Charge Transport and Degradation in HfO2 and HfOx Dielectrics A Padovani, L Larcher, G Bersuker, P Pavan IEEE electron device letters 34 (5), 680-682, 2013 | 83 | 2013 |
| Random telegraph noise in resistive random access memories: Compact modeling and advanced circuit design FM Puglisi, N Zagni, L Larcher, P Pavan IEEE Transactions on Electron Devices 65 (7), 2964-2972, 2018 | 77 | 2018 |
| Analytical model for low-frequency noise in amorphous chalcogenide-based phase-change memory devices G Betti Beneventi, A Calderoni, P Fantini, L Larcher, P Pavan Journal of Applied Physics 106 (5), 2009 | 63 | 2009 |
| Photovoltaic scavenging systems: Modeling and optimization D Brunelli, D Dondi, A Bertacchini, L Larcher, P Pavan, L Benini Microelectronics Journal 40 (9), 1337-1344, 2009 | 61 | 2009 |
| A new compact DC model of floating gate memory cells without capacitive coupling coefficients L Larcher, P Pavan, S Pietri, L Albani, A Marmiroli IEEE Transactions on Electron Devices 49 (2), 301-307, 2002 | 57 | 2002 |
| RTS noise characterization of HfOx RRAM in high resistive state FM Puglisi, P Pavan, A Padovani, L Larcher, G Bersuker Solid-State Electronics 84, 160-166, 2013 | 56 | 2013 |
