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Idrees S. Al-Kofahi
Idrees S. Al-Kofahi
Associate Professor of Electronics Engineering
Verified email at yu.edu.jo
Title
Cited by
Cited by
Year
Continuing degradation of the SiO2/Si interface after hot hole stress
IS Al-Kofahi, JF Zhang, G Groeseneken
Journal of applied physics 81 (6), 2686-2692, 1997
441997
Behavior of hot hole stressed SiO/Si interface at elevated temperature
JF Zhang, IS Al-Kofahi, G Groeseneken
Journal of applied physics 83 (2), 843-850, 1998
401998
Fabrication, performance and parasitic parameter extraction of 850 nm high-speed vertical-cavity lasers
AN Al-Omari, IK Al-Kofahi, KL Lear
Semiconductor Science and Technology 24 (9), 095024, 2009
372009
Genetic algorithm-based performance analysis of self-excited induction generator
YN Anagreh, IS Al-Kofahi
International Journal of Modelling and Simulation 26 (2), 175-179, 2006
192006
Optical characterization of sputtered aluminum nitride thin films–correlating refractive index with degree of c-axis orientation
A Ababneh, Z Albataineh, AMK Dagamseh, IS Al-Kofahi, B Schäfer, ...
Thin Solid Films 693, 137701, 2020
132020
Design of Power-Line Communication System (PLC) Using a PIC Microcontroller.
Q Al-Zobi, I Al-Tawil, K Gharaibeh, IS Al-Kofahi
Journal of Active & Passive Electronic Devices 3, 2008
122008
A two-stage power amplifier design for ultra-wideband applications
IS Al-Kofahi, Z Albataineh, A Dagamseh
Int. J. Electr. Comput. Eng.(IJECE) 11, 772-779, 2021
72021
Theoretical and experimental investigation of fiber loss and dispersion effects in optical networks
SM Abu–Gazleh, AA Eyadeh, IS Al-kofahi, QA Quran
Journal of Electron Devices 18, 1524-1530, 2013
52013
A High-Gain Low Noise Amplifier for RFID Front-Ends Reader
MA 3. Zaid Al bataineha, Yazan Hamadeh, Jafar Moheidat, Ahmad Dagamseh ...
Jordan Journal of Electrical Engineering 3 (1), 65-74, 2017
4*2017
Accurate and direct determination of interdiffusion parameters, a genetic algorithm approach
OM Khreis, IS Al-Kofahi
Semiconductor science and technology 20 (3), 320, 2005
42005
On the hot hole induced post-stress interface trap generation in MOSFET's
IS Al-Kofahi, JF Zhang, G Groeseneken
Proceedings of International Reliability Physics Symposium, 305-310, 1996
41996
Generation and annealing of hot hole induced interface states
IS Al-Kofahi, JF Zhang, G Groeseneken
Microelectronic engineering 36 (1-4), 227-230, 1997
31997
Minimization of Bending loss in Materials for Integrated Optics.
M Omari, A Ijjeh, IS Al-Kofahi
Journal of Active & Passive Electronic Devices 3, 2008
22008
A genetic algorithm analysis of photoluminescence experimental data from interdiffused quantum wells
OM Khreis, IS Al-Kofahi
Superlattices and Microstructures 37 (3), 193-201, 2005
12005
The effect of hot electron current density on nMOSFET reliability
O Buiu, S Taylor, IS Al-Kofahi, C Beech
Microelectronics Reliability 38 (6-8), 1085-1089, 1998
11998
The hot carrier induced degradation of Si/SiO↠2 interface.
ISA Al-Kofahi
Liverpool John Moores University, 1997
11997
The narrowband tunable Radio Frequency (RF) power amplifier with High-Efficiency at 2.4 GHz Frequency
MTAD Idrees S. Al-Kofahi, Zaid Albataineh
International Journal of Emerging Trends in Engineering Research 8 (3), 763-768, 2020
2020
INVESTIGATING CURRENT DENSITY DEPENDENCE OF OXIDE TRAP CHARGING IN n-MOSFETS DURING SUBSTRATE ELECTRONS INJECTION: A GENETIC ALGORITHM APPROACH
IS AL-Kofahi
Journal of Electron Devices 17, 1433-1438, 2013
2013
On the subthreshold measurements of SIC MOSFETs
IS Al-Kofahi
2008 IEEE International Conference on Semiconductor Electronics, 458-461, 2008
2008
Theoretical Analysis of a Non-homogeneous in Non-identical Optical Directional Coupler with Electrical Control.
A Ijjeh, M Omari, AN Al-Omari, IS Al-Kofahi
Journal of Active & Passive Electronic Devices 3, 2008
2008
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