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Akio Yamamoto
Akio Yamamoto
Verified email at u-fukui.ac.jp
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Cited by
Year
Indium nitride (InN): A review on growth, characterization, and properties
AG Bhuiyan, A Hashimoto, A Yamamoto
Journal of applied physics 94 (5), 2779-2808, 2003
10822003
Band gap of hexagonal InN and InGaN alloys
VY Davydov, AA Klochikhin, VV Emtsev, DA Kurdyukov, SV Ivanov, ...
physica status solidi (b) 234 (3), 787-795, 2002
4462002
Band Gap of InN and In‐Rich InxGa1—xN alloys (0.36 < x < 1)
VY Davydov, AA Klochikhin, VV Emtsev, SV Ivanov, VV Vekshin, ...
physica status solidi (b) 230 (2), R4-R6, 2002
4372002
InGaN solar cells: present state of the art and important challenges
AG Bhuiyan, K Sugita, A Hashimoto, A Yamamoto
IEEE Journal of photovoltaics 2 (3), 276-293, 2012
2682012
Defect reduction effects in GaAs on Si substrates by thermal annealing
M Yamaguchi, A Yamamoto, M Tachikawa, Y Itoh, M Sugo
Applied physics letters 53 (23), 2293-2295, 1988
2461988
Electrodeposition of pyrite (FeS2) thin films for photovoltaic cells
S Nakamura, A Yamamoto
Solar Energy Materials and Solar Cells 65 (1-4), 79-85, 2001
1972001
Effect of dislocations on the efficiency of thin‐film GaAs solar cells on Si substrates
M Yamaguchi, A Yamamoto, Y Itoh
Journal of applied physics 59 (5), 1751-1753, 1986
1591986
Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates
A Yamamoto, M Tsujino, M Ohkubo, A Hashimoto
Journal of crystal growth 137 (3-4), 415-420, 1994
1531994
Radiation damage in InP single crystals and solar cells
M Yamaguchi, C Uemura, A Yamamoto
Journal of applied physics 55 (6), 1429-1436, 1984
1531984
Recent advances in InN‐based solar cells: status and challenges in InGaN and InAlN solar cells
A Yamamoto, MR Islam, TT Kang, A Hashimoto
physica status solidi C 7 (5), 1309-1316, 2010
1472010
Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
AG Bhuiyan, K Sugita, K Kasashima, A Hashimoto, A Yamamoto, ...
Applied physics letters 83 (23), 4788-4790, 2003
1262003
Metalorganic chemical vapor deposition growth of InN for InN/Si tandem solar cell
A Yamamoto, M Tsujino, M Ohkubo, A Hashimoto
Solar Energy Materials and Solar Cells 35, 53-60, 1994
1221994
High conversion efficiency and high radiation resistance InP homojunction solar cells
A Yamamoto, M Yamaguchi, C Uemura
Applied physics letters 44 (6), 611-613, 1984
1151984
Double heterostructure GaAs tunnel junction for a AlGaAs/GaAs tandem solar cell
H Sugiura, C Amano, A Yamamoto, M Yamaguchi
Japanese journal of applied physics 27 (2R), 269, 1988
1101988
Pyrite (FeS2) thin films prepared by spray method using FeSO4 and (NH4) 2Sx
A Yamamoto, M Nakamura, A Seki, EL Li, A Hashimoto, S Nakamura
Solar energy materials and solar cells 75 (3-4), 451-456, 2003
1082003
Electron irradiation damage in radiation-resistant InP solar cells
M Yamaguchi, C Uemura, A Yamamoto, A Shibukawa
Japanese journal of applied physics 23 (3R), 302, 1984
941984
Blue electroluminescence from ZnSe diodes
M Yamaguchi, A Yamamoto, M Kondo
Journal of Applied Physics 48 (1), 196-202, 1977
931977
Minority‐carrier injection annealing of electron irradiation‐induced defects in InP solar cells
M Yamaguchi, K Ando, A Yamamoto, C Uemura
Applied physics letters 44 (4), 432-434, 1984
881984
GaAs heteroepitaxial growth on Si for solar cells
Y Itoh, T Nishioka, A Yamamoto, M Yamaguchi
Applied physics letters 52 (19), 1617-1618, 1988
811988
Improved electrical properties for metalorganic vapour phase epitaxial InN films
A Yamamoto, T Tanaka, K Koide, A Hashimoto
physica status solidi (a) 194 (2), 510-514, 2002
792002
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Articles 1–20