Peide Ye

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Han LiuApple Inc.Verified email at apple.com
Adam T. NealAir Force Research LabVerified email at us.af.mil
Gang QiuUniversity of Minnesota/UCLAVerified email at g.ucla.edu
Yi XUANUniversity of Pittsburgh, School of MedicineVerified email at pitt.edu
Xianfan XuPurdue UniversityVerified email at purdue.edu
Yanqing WuPeking UniversityVerified email at pku.edu.cn
Wenzhuo Wu (武文倬)School of IE; Flex Lab; Birck Nanotechnology Center; Regenstrief Center for Healthcare; PurdueVerified email at purdue.edu
Hong ZhouXidian UniversityVerified email at xidian.edu.cn
Adam CharnasPurdue UniversityVerified email at purdue.edu
Ali ShakouriProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Muhammad Ashraful AlamJai N. Gupta Professor of Electrical Engineering, Purdue UniversityVerified email at purdue.edu
Haiyan WangPurdue UniversityVerified email at purdue.edu
Dennis Han Chung LinIMECVerified email at imec.be
Chang NiuPurdue UniversityVerified email at purdue.edu
Yong P. ChenPurdue University; Aarhus University; WPI-AIMR; MUSTVerified email at purdue.edu
Dieter WeissUniversitaet Regensburg, Max-Planck Institut FKF Stuttgart, TU München; Technical University MunichVerified email at ur.de
James C. M. HwangProfessor of Materials Science and Engineering, Cornell UniversityVerified email at cornell.edu
M. HongNatl Taiwan Univ. Bell LaboratoriesVerified email at phys.ntu.edu.tw
Sami AlghamdiAssistant Professor at King Abdulaziz University - PhD, Purdue UniversityVerified email at kau.edu.sa
klaus von klitzingVerified email at klitzing.de

Peide Ye

Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University

Verified email at purdue.edu - Homepage

Microelectronic devices nano-materials nano-electronics condense-matter physics


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Phosphorene: an unexplored 2D semiconductor with a high hole mobility H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye ACS nano 8 (4), 4033-4041, 2014	6161	2014
Semiconducting black phosphorus: synthesis, transport properties and electronic applications H Liu, Y Du, Y Deng, DY Peide Chemical Society Reviews 44 (9), 2732-2743, 2015	1439	2015
Black Phosphorus–Monolayer MoS₂ van der Waals Heterojunction p–n Diode Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ... ACS nano 8 (8), 8292-8299, 2014	1273	2014
Channel Length Scaling of MoS₂ MOSFETs H Liu, AT Neal, PD Ye ACS nano 6 (10), 8563-8569, 2012	861	2012
Chloride Molecular Doping Technique on 2D Materials: WS₂ and MoS₂ L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano letters 14 (11), 6275-6280, 2014	720	2014
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ... Nature communications 6 (1), 8572, 2015	676	2015
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ... Nature nanotechnology 2 (6), 378-384, 2007	619	2007
Field-effect transistors made from solution-grown two-dimensional tellurene Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard III, ... Nature Electronics 1 (4), 228-236, 2018	605	2018
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang Applied Physics Letters 86 (6), 2005	567	2005
Phosphorene excites materials scientists ES Reich Nature 506 (7486), 19, 2014	552	2014
Bandgap engineering of two-dimensional semiconductor materials A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ... npj 2D Materials and Applications 4 (1), 29, 2020	525	2020
Dual-Gate MOSFET With Atomic-Layer-Depositedas Top-Gate Dielectric H Liu, DY Peide IEEE electron device letters 33 (4), 546-548, 2012	513	2012
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling Y Du, H Liu, Y Deng, PD Ye ACS nano 8 (10), 10035-10042, 2014	471	2014
InP-based transistor fabrication P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza US Patent 8,329,541, 2012	460	2012
Steep-slope hysteresis-free negative capacitance MoS₂ transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ... Nature nanotechnology 13 (1), 24-28, 2018	451	2018
Electrons in a periodic magnetic field induced by a regular array of micromagnets PD Ye, D Weiss, RR Gerhardts, M Seeger, K Von Klitzing, K Eberl, ... Physical review letters 74 (15), 3013, 1995	437	1995
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ... Applied Physics Letters 83 (1), 180-182, 2003	405	2003
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm Y Xuan, YQ Wu, PD Ye IEEE Electron Device Letters 29 (4), 294-296, 2008	389	2008
Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions Y Xu, C Cheng, S Du, J Yang, B Yu, J Luo, W Yin, E Li, S Dong, P Ye, ... ACS nano 10 (5), 4895-4919, 2016	361	2016
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition PD Ye, GD Wilk, J Kwo, B Yang, HJL Gossmann, M Frei, SNG Chu, ... IEEE Electron Device Letters 24 (4), 209-211, 2003	336	2003

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