| Broadband graphene terahertz modulators enabled by intraband transitions B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ... Nature communications 3 (1), 1-7, 2012 | 976 | 2012 |
| Carrier statistics and quantum capacitance of graphene sheets and ribbons T Fang, A Konar, H Xing, D Jena Applied Physics Letters 91 (9), 092109, 2007 | 744 | 2007 |
| Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ... ACS nano 7 (2), 1072-1080, 2013 | 742 | 2013 |
| Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy R Yan, JR Simpson, S Bertolazzi, J Brivio, M Watson, X Wu, A Kis, T Luo, ... ACS nano 8 (1), 986-993, 2014 | 714 | 2014 |
| Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures J Simon, V Protasenko, C Lian, H Xing, D Jena Science 327 (5961), 60-64, 2010 | 675 | 2010 |
| High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates H Xing, Y Dora, A Chini, S Heikman, S Keller, UK Mishra IEEE Electron Device Letters 25 (4), 161-163, 2004 | 442 | 2004 |
| Heavy doping effects in Mg-doped GaN P Kozodoy, H Xing, SP DenBaars, UK Mishra, A Saxler, R Perrin, ... Journal of Applied Physics 87 (4), 1832-1835, 2000 | 429 | 2000 |
| InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012 | 370 | 2012 |
| High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, H Xing, ... Applied Physics Letters 104 (20), 203111, 2014 | 334 | 2014 |
| Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering T Fang, A Konar, H Xing, D Jena Physical Review B 78 (20), 205403, 2008 | 311 | 2008 |
| Intrinsic electron mobility limits in β-Ga2O3 N Ma, N Tanen, A Verma, Z Guo, T Luo, H Xing, D Jena Applied Physics Letters 109 (21), 212101, 2016 | 291 | 2016 |
| Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment R Yan, S Fathipour, Y Han, B Song, S Xiao, M Li, N Ma, V Protasenko, ... Nano letters 15 (9), 5791-5798, 2015 | 285 | 2015 |
| Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ... Applied Physics Letters 101 (1), 013107, 2012 | 276 | 2012 |
| Graphene nanoribbon tunnel transistors Q Zhang, T Fang, H Xing, A Seabaugh, D Jena IEEE Electron Device Letters 29 (12), 1344-1346, 2008 | 271 | 2008 |
| Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators B Sensale-Rodriguez, R Yan, S Rafique, M Zhu, W Li, X Liang, ... Nano letters 12 (9), 4518-4522, 2012 | 269 | 2012 |
| Unique prospects for graphene-based terahertz modulators B Sensale-Rodriguez, T Fang, R Yan, MM Kelly, D Jena, L Liu, H Xing Applied Physics Letters 99 (11), 113104, 2011 | 223 | 2011 |
| Polarization-enhanced Mg doping of AlGaN/GaN superlattices P Kozodoy, YP Smorchkova, M Hansen, H Xing, SP DenBaars, UK Mishra, ... Applied Physics Letters 75 (16), 2444-2446, 1999 | 211 | 1999 |
| Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ... IEEE Electron Device Letters 39 (6), 869-872, 2018 | 202 | 2018 |
| AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing IEEE Electron Device Letters 29 (7), 661-664, 2008 | 194 | 2008 |
| Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ... Applied Physics Letters 101 (2), 022105, 2012 | 188 | 2012 |
Debdeep JenaCornell UniversityVerified email at cornell.edu
