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Amit Verma
Amit Verma
Department of Electrical Engineering, Indian Institute of Technology Kanpur
Verified email at iitk.ac.in - Homepage
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Cited by
Year
Anisotropic thermal conductivity in single crystal β-gallium oxide
Z Guo, A Verma, X Wu, F Sun, A Hickman, T Masui, A Kuramata, ...
Appl. Phys. Lett. 106, 111909, 2015
4632015
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, HG Xing, ...
Applied Physics Letters 104 (20), 203111, 2014
3842014
Intrinsic electron mobility limits in beta-Ga2O3
N Ma, N Tanen, A Verma, Z Guo, T Luo, H Xing, D Jena
Appl. Phys. Lett. 109, 212101, 2016
3752016
Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
H Paik, Z Chen, E Lochocki, A Seidner H., A Verma, N Tanen, J Park, ...
APL Materials 5, 2017
1522017
Intrinsic Mobility Limiting Mechanisms in Lanthanum-doped Strontium Titanate
A Verma, AP Kajdos, TA Cain, S Stemmer, D Jena
Physical Review Letters 112 (21), 216601, 2014
1212014
Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
J Verma, PK Kandaswamy, V Protasenko, A Verma, HG Xing, D Jena
Applied Physics Letters 102 (4), 041103, 2013
802013
Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs
G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ...
IEEE Electron Device Letters 34 (7), 852-854, 2013
772013
Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3
L Zhang, A Verma, HG Xing, D Jena
Japanese Journal of Applied Physics 56, 030304, 2017
702017
Compact Modeling of Drain Current, Charges, and Capacitances in Long-Channel Gate-All-Around Negative Capacitance MFIS Transistor
AD Gaidhane, G Pahwa, A Verma, YS Chauhan
IEEE Transactions on Electron Devices, 2018
682018
Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2
J Encomendero, R Yan, A Verma, SM Islam, V Protasenko, S Rouvimov, ...
Applied Physics Letters 112, 2018
622018
Ferroelectric transition in compressively strained SrTiO3 thin films
A Verma, S Raghavan, S Stemmer, D Jena
Applied Physics Letters 107, 192908, 2015
622015
Charge transport in non-polar and semi-polar III-V nitride heterostructures
A Konar, A Verma, T Fang, P Zhao, R Jana, D Jena
Semiconductor Science and Technology 27 (2), 024018, 2012
432012
Maghemite/Polyvinylidene Fluoride Nanocomposite for Transparent, Flexible Triboelectric Nanogenerator and Noncontact Magneto-Triboelectric Nanogenerator
B Fatma, R Bhunia, S Gupta, A Verma, V Verma, A Garg
ACS Sustainable Chemistry & Engineering 7 (17), 14856-14866, 2019
322019
Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation
A Verma, S Raghavan, S Stemmer, D Jena
Applied Physics Letters 105, 113512, 2014
322014
Temperature dependence of β-Ga2O3 heteroepitaxy on c-plane sapphire using low pressure chemical vapor deposition
G Joshi, YS Chauhan, A Verma
Journal of Alloys and Compounds 883, 160799, 2021
272021
Determination of the Mott-Hubbard gap in
L Bjaalie, A Verma, B Himmetoglu, A Janotti, S Raghavan, V Protasenko, ...
Physical Review B 92 (8), 085111, 2015
232015
Determination of the Mott-Hubbard gap in GdTiO3
L Bjaalie, A Verma, B Himmetoglu, A Janotti, S Raghavan, V Protasenko, ...
Physical Review B 92, 085111, 2015
232015
Gate-Induced Drain Leakage in Negative Capacitance FinFETs
AD Gaidhane, G Pahwa, A Verma, YS Chauhan
IEEE Transactions on Electron Devices 67 (3), 802-809, 2020
222020
Accurate Online Junction Temperature Estimation of IGBT Using Inflection Point Based Updated I–V Characteristics
A Arya, A Chanekar, P Deshmukh, A Verma, S Anand
IEEE Transactions on Power Electronics 36 (9), 9826-9836, 2021
212021
Vanadium dioxide thin films synthesized using low thermal budget atmospheric oxidation
P Ashok, YS Chauhan, A Verma
Thin Solid Films 706, 138003, 2020
212020
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