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Tatiana V. Shubina
Tatiana V. Shubina
Chief researcher, Ioffe Institute of RAS
Verified email at beam.ioffe.ru - Homepage
Title
Cited by
Cited by
Year
Mie resonances, infrared emission, and the band gap of InN
TV Shubina, SV Ivanov, VN Jmerik, DD Solnyshkov, VA Vekshin, ...
Physical Review Letters 92 (11), 117407, 2004
2862004
Recombination of free and bound excitons in GaN
B Monemar, PP Paskov, JP Bergman, AA Toropov, TV Shubina, ...
physica status solidi (b) 245 (9), 1723-1740, 2008
1442008
Growth and excitonic properties of single fractional monolayer CdSe/ZnSe structures
SV Ivanov, AA Toropov, TV Shubina, SV Sorokin, AV Lebedev, IV Sedova, ...
Journal of applied physics 83 (6), 3168-3171, 1998
1361998
Quantum-size stark effect in semiconductor microcrystals
AI Ekinov, AL Efros, TV Shubina, AP Skvortsov
Journal of Luminescence 46 (2), 97-100, 1990
1201990
CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers
SV Ivanov, AA Toropov, SV Sorokin, TV Shubina, IV Sedova, AA Sitnikova, ...
Applied physics letters 74 (4), 498-500, 1999
1161999
Plasma-assisted MBE growth and characterization of InN on sapphire
SV Ivanov, TV Shubina, VN Jmerik, VA Vekshin, PS Kop’ev, B Monemar
Journal of crystal growth 269 (1), 1-9, 2004
802004
Metastable nature of InN and In-rich InGaN alloys
SV Ivanov, TV Shubina, TA Komissarova, VN Jmerik
Journal of crystal growth 403, 83-89, 2014
732014
Broadening of submonolayer CdSe sheets in CdSe/ZnSe superlattices studied by x-ray diffraction
RN Kyutt, AA Toropov, SV Sorokin, TV Shubina, SV Ivanov, M Karlsteen, ...
Applied physics letters 75 (3), 373-375, 1999
711999
Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages
VV Mamutin, VA Vekshin, VY Davydov, VV Ratnikov, TV Shubina, ...
Physica Status Solidi-A-Applied Research 176 (1), 247-252, 1999
671999
Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films
V Ratnikov, R Kyutt, T Shubina, T Paskova, E Valcheva, B Monemar
Journal of Applied Physics 88 (11), 6252-6259, 2000
662000
Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
Y Robin, SY Bae, TV Shubina, M Pristovsek, EA Evropeitsev, DA Kirilenko, ...
Scientific Reports 8 (1), 7311, 2018
632018
InSe as a case between 3D and 2D layered crystals for excitons
TV Shubina, W Desrat, M Moret, A Tiberj, O Briot, VY Davydov, ...
Nature communications 10 (1), 3479, 2019
512019
Transient photoluminescence of shallow donor bound excitons in GaN
B Monemar, PP Paskov, JP Bergman, G Pozina, AA Toropov, TV Shubina, ...
Physical Review B 82 (23), 235202, 2010
512010
Determination of microdistortion components and their application to structural characterization of HVPE GaN epitaxial layers
VV Ratnikov, RN Kyutt, TV Shubina, T Paskova, B Monemar
Journal of Physics D: Applied Physics 34 (10A), A30, 2001
512001
Optically enhanced emission of localized excitons in In x Ga 1− x N films by coupling to plasmons in a gold nanoparticle
AA Toropov, TV Shubina, VN Jmerik, SV Ivanov, Y Ogawa, F Minami
Physical review letters 103 (3), 037403, 2009
482009
Recent developments in the III‐nitride materials
B Monemar, PP Paskov, JP Bergman, AA Toropov, TV Shubina
physica status solidi (b) 244 (6), 1759-1768, 2007
462007
ZnSe-based blue-green lasers with a short-period superlattice waveguide
S Ivanov, A Toropov, S Sorokin, T Shubina, A Lebedev, P Kop’ev, ...
Applied physics letters 73 (15), 2104-2106, 1998
461998
Plasmonic effects in metal-semiconductor nanostructures
AA Toropov, TV Shubina
OUP Oxford, 2015
442015
AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique
VN Jmerik, TV Shubina, AM Mizerov, KG Belyaev, AV Sakharov, ...
Journal of crystal growth 311 (7), 2080-2083, 2009
432009
Peculiarities of migration-enhanced-epitaxy (MEE) versus molecular beam epitaxy (MBE) growth kinetics of CdSe fractional monolayers in ZnSe
S Sorokin, T Shubina, A Toropov, I Sedova, A Sitnikova, R Zolotareva, ...
Journal of crystal growth 201, 461-464, 1999
431999
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