| Mechanism of contact resistance formation in ohmic contacts with high dislocation density AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ... Journal of Applied Physics 111 (8), 2012 | 51 | 2012 |
| Mechanism of dislocation-governed charge transport in Schottky diodes based on gallium nitride AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ... Semiconductors 42, 689-693, 2008 | 32 | 2008 |
| High‐Quality CsPbBr3 Perovskite Films with Modal Gain above 10 000 cm−1 at Room Temperature DA Tatarinov, SS Anoshkin, IA Tsibizov, V Sheremet, F Isik, ... Advanced Optical Materials 11 (7), 2202407, 2023 | 23 | 2023 |
| The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes V Sheremet, M Genç, M Elçi, N Sheremet, A Aydınlı, I Altuntaş, K Ding, ... Superlattices and Microstructures 111, 1177-1194, 2017 | 21 | 2017 |
| Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, AV Sachenko, ... arXiv preprint arXiv:1104.1030, 2011 | 20 | 2011 |
| Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density AV Sachenko, AE Belyaev, AV Bobyl, NS Boltovets, VN Ivanov, ... Semiconductors 46, 334-341, 2012 | 17 | 2012 |
| Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, VP Kladko, ... Journal of applied physics 112 (6), 2012 | 15 | 2012 |
| Metrological aspects of measuring resistance of ohmic contacts VN Sheremet Radioelectronics and communications systems 53, 119-128, 2010 | 15 | 2010 |
| Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs AA M. Genç, V. Sheremet, M. Elçi, A.E. Kasapoğlu, İ. Altuntaş, İ. Demir, G ... Superlattices and Microstructures 128, 9-13, 2019 | 14 | 2019 |
| Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors V Sheremet, M Genç, N Gheshlaghi, M Elçi, N Sheremet, A Aydınlı, ... Superlattices and Microstructures 113, 623-634, 2018 | 14 | 2018 |
| InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors V Sheremet, N Gheshlaghi, M Sözen, M Elçi, N Sheremet, A Aydınlı, ... Superlattices and Microstructures 116, 253-261, 2018 | 13 | 2018 |
| Temperature dependences of the contact resistivity in ohmic contacts to n +-InN AV Sachenko, AE Belyaev, NS Boltovets, PN Brunkov, VN Jmerik, ... Semiconductors 49, 461-471, 2015 | 11 | 2015 |
| Temperature dependence of contact resistance for Au-Ti-Pd2Si-n +-Si ohmic contacts subjected to microwave irradiation AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, AV Sachenko, ... Semiconductors 46, 330-333, 2012 | 11 | 2012 |
| On the tunnel mechanism of current flow in Au-TiBx-n-GaN-i-Al2O3 Schottky barrier diodes AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ... Semiconductor Physics, Quantum Electronics & Optoelectronics 10 (3), 1-5, 2007 | 9 | 2007 |
| Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ... physica status solidi c 10 (3), 498-500, 2013 | 8 | 2013 |
| The mechanism of contact-resistance formation on lapped n-Si surfaces AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, ... Semiconductors 47, 449-454, 2013 | 7 | 2013 |
| The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, SA Vitusevich, ... Technical Physics Letters 42, 649-651, 2016 | 6 | 2016 |
| Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures AE Belyaev, NS Boltovets, VN Ivanov, VP Kladko, RV Konakova, ... Semiconductor Physics Quantum Electronics & Optoelectronics, 2008 | 6 | 2008 |
| Development of high-stable contact systems to gallium nitride microwave diodes AE Belyaev, NS Boltovets, VN Ivanov, LM Kapitanchuk, VP Kladko, ... Semiconductor Physics Quantum Electronics & Optoelectronics, 2007 | 6 | 2007 |
| Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2–300 K AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, LM Kapitanchuk, ... Semiconductors 48, 1308-1311, 2014 | 4 | 2014 |
Belyaev A.E.Institute of semiconductor physicsVerified email at isp.kiev.ua
