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Sebastiano Strangio
Sebastiano Strangio
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Cited by
Year
An ultralow-voltage energy-efficient level shifter
M Lanuzza, F Crupi, S Rao, R De Rose, S Strangio, G Iannaccone
IEEE Transactions on Circuits and Systems II: Express Briefs 64 (1), 61-65, 2016
992016
Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells
S Strangio, P Palestri, D Esseni, L Selmi, F Crupi, S Richter, QT Zhao, ...
IEEE Journal of the Electron Devices Society 3 (3), 223-232, 2015
842015
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
N Raghavan, R Degraeve, A Fantini, L Goux, S Strangio, B Govoreanu, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 3.1-5E. 3.7, 2013
772013
Mixed tunnel-FET/MOSFET level shifters: A new proposal to extend the tunnel-FET application domain
M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni
IEEE Transactions on Electron Devices 62 (12), 3973-3979, 2015
732015
Digital and analog TFET circuits: Design and benchmark
S Strangio, F Settino, P Palestri, M Lanuzza, F Crupi, D Esseni, L Selmi
Solid-State Electronics 146, 50-65, 2018
682018
Understanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits
F Settino, M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni, L Selmi
IEEE Transactions on Electron Devices 64 (6), 2736-2743, 2017
642017
Assessment of InAs/AlGaSb tunnel-FET virtual technology platform for low-power digital circuits
S Strangio, P Palestri, M Lanuzza, F Crupi, D Esseni, L Selmi
IEEE Transactions on Electron Devices 63 (7), 2749-2756, 2016
552016
Power electronics based on wide-bandgap semiconductors: Opportunities and challenges
G Iannaccone, C Sbrana, I Morelli, S Strangio
IEEE Access 9, 139446-139456, 2021
432021
Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation
L Goux, A Fantini, R Degraeve, N Raghavan, R Nigon, S Strangio, G Kar, ...
2013 Symposium on VLSI Technology, T162-T163, 2013
422013
Strained silicon complementary TFET SRAM: Experimental demonstration and simulations
GV Luong, S Strangio, AT Tiedemann, P Bernardy, S Trellenkamp, ...
IEEE journal of the Electron Devices Society 6, 1033-1040, 2018
342018
Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages
GV Luong, S Strangio, A Tiedemannn, S Lenk, S Trellenkamp, ...
Solid-State Electronics 115, 152-159, 2016
342016
Low frequency noise and gate bias instability in normally OFF AlGaN/GaN HEMTs
F Crupi, P Magnone, S Strangio, F Iucolano, G Meneghesso
IEEE Transactions on Electron Devices 63 (5), 2219-2222, 2016
322016
On the bipolar resistive-switching characteristics of Al2O3-and HfO2-based memory cells operated in the soft-breakdown regime
L Goux, N Raghavan, A Fantini, R Nigon, S Strangio, R Degraeve, G Kar, ...
Journal of Applied Physics 116 (13), 2014
292014
Analog vector-matrix multiplier based on programmable current mirrors for neural network integrated circuits
M Paliy, S Strangio, P Ruiu, T Rizzo, G Iannaccone
IEEE Access 8, 203525-203537, 2020
242020
A 0.05 mm˛, 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS
B Zambrano, E Garzón, S Strangio, F Crupi, M Lanuzza
IEEE Transactions on Circuits and Systems II: Express Briefs 69 (3), 749-753, 2021
212021
Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2
G Migliato Marega, Z Wang, M Paliy, G Giusi, S Strangio, F Castiglione, ...
ACS nano 16 (3), 3684-3694, 2022
202022
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits
S Strangio, P Palestri, M Lanuzza, D Esseni, F Crupi, L Selmi
Solid-State Electronics 128, 37-42, 2017
202017
Ultralow voltage finFET-versus TFET-based STT-MRAM cells for IoT applications
E Garzón, M Lanuzza, R Taco, S Strangio
Electronics 10 (15), 1756, 2021
172021
Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM
GV Luong, S Strangio, AT Tiedemann, P Bernardy, S Trellenkamp, ...
2017 47th European Solid-State Device Research Conference (ESSDERC), 42-45, 2017
122017
A low-voltage, low-power reconfigurable current-mode softmax circuit for analog neural networks
M Vatalaro, T Moposita, S Strangio, L Trojman, A Vladimirescu, ...
Electronics 10 (9), 1004, 2021
102021
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