Desplanque Ludovic
Desplanque Ludovic
Ass. Professor, IEMN, CNRS and University of Lille
Verified email at - Homepage
Cited by
Cited by
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
H Sellier, B Hackens, MG Pala, F Martins, S Baltazar, X Wallart, ...
Semiconductor science and technology 26 (6), 064008, 2011
Imaging Coulomb islands in a quantum Hall interferometer
B Hackens, F Martins, S Faniel, CA Dutu, H Sellier, S Huant, M Pala, ...
Nature communications 1 (1), 39, 2010
Integrated terahertz TEM horn antenna
E Peytavit, JF Lampin, T Akalin, L Desplanque
Electronics Letters 43 (2), 1, 2007
Terahertz frequency difference from vertically integrated low-temperature-grown GaAs photodetector
E Peytavit, S Arscott, D Lippens, G Mouret, S Matton, P Masselin, ...
Applied Physics Letters 81 (7), 1174-1176, 2002
Transport inefficiency in branched-out mesoscopic networks: An analog of the Braess paradox
MG Pala, S Baltazar, P Liu, H Sellier, B Hackens, F Martins, V Bayot, ...
Physical review letters 108 (7), 076802, 2012
Detection of picosecond electrical pulses using the intrinsic Franz–Keldysh effect
JF Lampin, L Desplanque, F Mollot
Applied Physics Letters 78 (26), 4103-4105, 2001
Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness
Y Wang, P Ruterana, L Desplanque, S El Kazzi, X Wallart
Journal of Applied Physics 109 (2), 2011
Terahertz detection in zero-bias InAs self-switching diodes at room temperature
A Westlund, P Sangaré, G Ducournau, PÅ Nilsson, C Gaquiere, ...
Applied Physics Letters 103 (13), 2013
Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs and AlGaAs
L Desplanque, JF Lampin, F Mollot
Applied physics letters 84 (12), 2049-2051, 2004
Electrical characterization and small-signal modeling of InAs/AlSb HEMTs for low-noise and high-frequency applications
M Malmkvist, E Lefebvre, M Borg, L Desplanque, X Wallart, G Dambrine, ...
IEEE transactions on microwave theory and techniques 56 (12), 2685-2691, 2008
Experimental evidence of backward waves on terahertz left-handed transmission lines
T Crépin, JF Lampin, T Decoopman, X Mélique, L Desplanque, D Lippens
Applied Physics Letters 87 (10), 2005
Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement
M Fahed, L Desplanque, D Troadec, G Patriarche, X Wallart
Nanotechnology 27 (50), 505301, 2016
High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
L Desplanque, D Vignaud, X Wallart
Journal of crystal growth 301, 194-198, 2007
Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
L Desplanque, S El Kazzi, C Coinon, S Ziegler, B Kunert, A Beyer, K Volz, ...
Applied Physics Letters 101 (14), 2012
Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy
L Desplanque, M Fahed, X Han, VK Chinni, D Troadec, MP Chauvat, ...
Nanotechnology 25 (46), 465302, 2014
Cryogenic InAs/AlSb HEMT wideband low-noise IF amplifier for ultra-low-power applications
G Moschetti, N Wadefalk, PÅ Nilsson, M Abbasi, L Desplanque, X Wallart, ...
IEEE microwave and wireless components letters 22 (3), 144-146, 2012
Coherent tunnelling across a quantum point contact in the quantum Hall regime
F Martins, S Faniel, B Rosenow, H Sellier, S Huant, MG Pala, ...
Scientific reports 3 (1), 1416, 2013
Gate-recess technology for InAs/AlSb HEMTs
E Lefebvre, M Malmkvist, M Borg, L Desplanque, X Wallart, G Dambrine, ...
IEEE transactions on electron devices 56 (9), 1904-1911, 2009
The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism
Y Wang, P Ruterana, S Kret, S El Kazzi, L Desplanque, X Wallart
Applied Physics Letters 102 (5), 2013
Anisotropic transport properties in InAs/AlSb heterostructures
G Moschetti, H Zhao, PÅ Nilsson, S Wang, A Kalabukhov, G Dambrine, ...
Applied Physics Letters 97 (24), 2010
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