| On the feasibility of p-type Ga2O3 A Kyrtsos, M Matsubara, E Bellotti Applied Physics Letters 112 (3), 032108, 2018 | 219 | 2018 |
| Resonant Inelastic X-Ray Scattering in JP Hill, CC Kao, WAL Caliebe, M Matsubara, A Kotani, JL Peng, ... Physical review letters 80 (22), 4967, 1998 | 211 | 1998 |
| Polarization dependence of soft-x-ray Raman scattering at the L edge of Y Harada, T Kinugasa, R Eguchi, M Matsubara, A Kotani, M Watanabe, ... Physical Review B 61 (19), 12854, 2000 | 98 | 2000 |
| Migration mechanisms and diffusion barriers of vacancies in A Kyrtsos, M Matsubara, E Bellotti Physical Review B 95 (24), 245202, 2017 | 95 | 2017 |
| NiO as a test case for high resolution resonant inelastic soft x-ray scattering G Ghiringhelli, M Matsubara, C Dallera, F Fracassi, R Gusmeroli, ... Journal of Physics: Condensed Matter 17 (35), 5397, 2005 | 92 | 2005 |
| A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies M Matsubara, E Bellotti Journal of Applied Physics 121 (19), 195701, 2017 | 83 | 2017 |
| Resonant inelastic x-ray scattering of : edge measurements and assessment of their interpretation G Ghiringhelli, M Matsubara, C Dallera, F Fracassi, A Tagliaferri, ... Physical Review B 73 (3), 035111, 2006 | 83 | 2006 |
| Polarization dependence of resonant X-ray emission spectra in early transition metal compounds M Matsubara, T Uozumi, A Kotani, Y Harada, S Shin Journal of the Physical Society of Japan 69 (5), 1558-1565, 2000 | 63 | 2000 |
| Migration mechanisms and diffusion barriers of carbon and native point defects in GaN A Kyrtsos, M Matsubara, E Bellotti Physical Review B 93 (24), 245201, 2016 | 62 | 2016 |
| Stable Highly Doped C60-mSim Heterofullerenes: A First Principles Study of C40Si20, C36Si24, and C30Si30 M Matsubara, C Massobrio The journal of physical chemistry A 109 (19), 4415-4418, 2005 | 55 | 2005 |
| A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen M Matsubara, E Bellotti Journal of Applied Physics 121 (19), 195702, 2017 | 53 | 2017 |
| Polarization Dependence of Resonant X-Ray Emission Spectra in 3dn Transition Metal Compounds with n = 0, 1, 2, 3 M Matsubara, T Uozumi, A Kotani, Y Harada, S Shin Journal of the Physical Society of Japan 71 (1), 347-356, 2002 | 52 | 2002 |
| Dynamical identification of a threshold instability in Si-doped heterofullerenes M Matsubara, J Kortus, JC Parlebas, C Massobrio Physical review letters 96 (15), 155502, 2006 | 43 | 2006 |
| Charge transfer excitation in resonant X-ray emission spectroscopy of NiO M Matsubara, T Uozumi, A Kotani, J Claude Parlebas Journal of the Physical Society of Japan 74 (7), 2052-2060, 2005 | 42 | 2005 |
| Electronic structure studies of by soft x-ray emission spectroscopy: Band-like and excitonic vanadium states T Schmitt, LC Duda, M Matsubara, M Mattesini, M Klemm, A Augustsson, ... Physical Review B 69 (12), 125103, 2004 | 42 | 2004 |
| A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In-doped ZnO R Saniz, Y Xu, M Matsubara, MN Amini, H Dixit, D Lamoen, B Partoens Journal of Physics and Chemistry of Solids 74 (1), 45-50, 2013 | 40 | 2013 |
| Bonding behavior and thermal stability of : A first-principles molecular dynamics study M Matsubara, C Massobrio The Journal of chemical physics 122 (8), 084304, 2005 | 39 | 2005 |
| Combining - and -edge resonant inelastic x-ray scattering for studies of transition metal compounds SG Chiuzbăian, T Schmitt, M Matsubara, A Kotani, G Ghiringhelli, ... Physical Review B 78 (24), 245102, 2008 | 38 | 2008 |
| Theory of carriers transport in III-nitride materials: State of the art and future outlook E Bellotti, F Bertazzi, S Shishehchi, M Matsubara, M Goano IEEE transactions on electron devices 60 (10), 3204-3215, 2013 | 37 | 2013 |
| Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective F Bertazzi, M Goano, X Zhou, M Calciati, G Ghione, M Matsubara, ... Applied Physics Letters 106 (6), 061112, 2015 | 32 | 2015 |
