| Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low-and high-energy electrons P Hazdra, J Vobecký, H Dorschner, K Brand Microelectronics Journal 35 (3), 249-257, 2004 | 86 | 2004 |
| Optimization of power diode characteristics by means of ion irradiation J Vobecky, P Hazdra, J Homola IEEE Transactions on Electron Devices 43 (12), 2283-2289, 1996 | 86 | 1996 |
| Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques P Hazdra, J Vobecký, K Brand Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 60 | 2002 |
| Accurate simulation of fast ion irradiated power devices P Hazdra, J Vobecký Solid-State Electronics 37 (1), 127-134, 1994 | 51 | 1994 |
| Displacement damage and total ionisation dose effects on 4H‐SiC power devices P Hazdra, S Popelka IET Power Electronics 12 (15), 3910-3918, 2019 | 43 | 2019 |
| Lifetime control in silicon power PiN diode by ion irradiation: Suppression of undesired leakage P Hazdra, V Komarnitskyy Microelectronics journal 37 (3), 197-203, 2006 | 41 | 2006 |
| Radiation resistance of wide‐bandgap semiconductor power transistors P Hazdra, S Popelka physica status solidi (a) 214 (4), 1600447, 2017 | 40 | 2017 |
| Point defects in 4H–SiC epilayers introduced by neutron irradiation P Hazdra, V Zahlava, J Vobecký Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014 | 37 | 2014 |
| Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots P Hazdra, J Voves, J Oswald, K Kuldová, A Hospodková, E Hulicius, ... Microelectronics Journal 39 (8), 1070-1074, 2008 | 37 | 2008 |
| ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation J Vobecký, P Hazdra, V Záhlava, A Mihaila, M Berthou Solid-State Electronics 94, 32-38, 2014 | 36 | 2014 |
| Divacancy profiles in MeV helium irradiated silicon from reverse I–V measurement P Hazdra, J Rubeš, J Vobecký Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999 | 36 | 1999 |
| Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV P Hazdra, J Vobecký physica status solidi (a) 216 (17), 1900312, 2019 | 35 | 2019 |
| Impact of electron irradiation on the ON-state characteristics of a 4H–SiC JBS diode J Vobecký, P Hazdra, S Popelka, RK Sharma IEEE Transactions on Electron Devices 62 (6), 1964-1969, 2015 | 35 | 2015 |
| High-power PiN diode with the local lifetime control based on the proximity gettering of platinum J Vobecky, P Hazdra IEEE Electron Device Letters 23 (7), 392-394, 2002 | 34 | 2002 |
| A new degree of freedom in diode optimization: arbitrary axial lifetime profiles by means of ion irradiation P Hazdra, J Vobecky, N Galster, O Humbel, T Dalibor 12th International Symposium on Power Semiconductor Devices & ICs …, 2000 | 32 | 2000 |
| Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition A Hospodková, M Zíková, J Pangrác, J Oswald, J Kubištová, K Kuldová, ... Journal of Physics D: Applied Physics 46 (9), 095103, 2013 | 31 | 2013 |
| Local lifetime control by light ion irradiation: impact on blocking capability of power P–i–N diode P Hazdra, K Brand, J Rubeš, J Vobecký Microelectronics journal 32 (5-6), 449-456, 2001 | 29 | 2001 |
| Future trends in local lifetime control [power semiconductor devices] J Vobecky, P Hazdra 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD'96 …, 1996 | 29 | 1996 |
| Defect distribution in MeV proton irradiated silicon measured by high-voltage current transient spectroscopy P Hazdra, K Brand, J Vobecký Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 28 | 2002 |
| Open circuit voltage decay lifetime of ion irradiated devices J Vobecký, P Hazdra, V Záhlava Microelectronics Journal 30 (6), 513-520, 1999 | 28 | 1999 |
