| Electron mobility in direct-gap polar semiconductors DL Rode Physical Review B 2 (4), 1012, 1970 | 438 | 1970 |
| Low-field electron transport DL Rode Semiconductors and semimetals 10, 1-89, 1975 | 399 | 1975 |
| Electron transport in insb, inas, and inp DL Rode Physical Review B 3 (10), 3287, 1971 | 384 | 1971 |
| Electron transport in GaAs DL Rode, S Knight Physical Review B 3 (8), 2534, 1971 | 329 | 1971 |
| Semiconductors and semimetals DL Rode Transport Phenomena 10, 1, 1975 | 310 | 1975 |
| Electron mobility in II-VI semiconductors DL Rode Physical Review B 2 (10), 4036, 1970 | 222 | 1970 |
| Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnet DL Rode Journal of Crystal Growth 20 (1), 13-23, 1973 | 162 | 1973 |
| Electron Hall mobility of n‐GaN DL Rode, DK Gaskill Applied physics letters 66 (15), 1972-1973, 1995 | 134 | 1995 |
| Electron mobility in ge, si, and GAP DL Rode physica status solidi (b) 53 (1), 245-254, 1972 | 113 | 1972 |
| Electrical contact for an LED CA Gaw, DL Rode US Patent 4,864,370, 1989 | 103 | 1989 |
| Theory of electron galvanomagnetics in crystals: Hall effect in semiconductors and semimetals DL Rode physica status solidi (b) 55 (2), 687-696, 1973 | 91 | 1973 |
| Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy D Huang, F Yun, MA Reshchikov, D Wang, H Morkoç, DL Rode, LA Farina, ... Solid-State Electronics 45 (5), 711-715, 2001 | 77 | 2001 |
| Surface dislocation theory of reconstructed crystals: VPE GaAs DL Rode physica status solidi (a) 32 (2), 425-434, 1975 | 58 | 1975 |
| Effects of substrate misorientation on the properties of (Al, Ga) As grown by molecular beam epitaxy RK Tsui, JA Curless, GD Kramer, MS Peffley, DL Rode Journal of applied physics 58 (7), 2570-2572, 1985 | 56 | 1985 |
| Electrolytic etching and electron mobility of GaAs for FET's DL Rode, B Schwartz, JV DiLorenzo Solid-State Electronics 17 (11), 1119-1123, 1974 | 55 | 1974 |
| Precision fabrication of D-shaped single-mode optical fibers by in situ monitoring MH Cordaro, DL Rode, TS Barry, RR Krchnavek Journal of lightwave technology 12 (9), 1524-1531, 1994 | 50 | 1994 |
| Crystal growth terraces and surface reconstruction DL Rode Journal of Crystal Growth 27, 313-315, 1974 | 50 | 1974 |
| Singular instabilities on LPE GaAs, CVD Si, and MBE InP growth surfaces DL Rode, WR Wagner, NE Schumaker Applied Physics Letters 30 (2), 75-78, 1977 | 46 | 1977 |
| Gallium arsenide Schottky barrier avalance diode array JV Dilorenzo, WC Niehaus, DL Rode US Patent 3,896,473, 1975 | 46 | 1975 |
| Subnanometer surface roughness of dc magnetron sputtered Al films DL Rode, VR Gaddam, JH Yi Journal of Applied Physics 102 (2), 2007 | 42 | 2007 |
