| Theoretical possibility of stage corrugation in Si and Ge analogs of graphite K Takeda, K Shiraishi Physical Review B 50 (20), 14916, 1994 | 1154 | 1994 |
| Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shell Y Kanemitsu, T Ogawa, K Shiraishi, K Takeda Physical Review B 48 (7), 4883, 1993 | 692 | 1993 |
| A new slab model approach for electronic structure calculation of polar semiconductor surface K Shiraishi Journal of the Physical Society of Japan 59 (10), 3455-3458, 1990 | 428 | 1990 |
| First-Principles Study of Oxide Growth on Si(100) Surfaces and at /Si(100) Interfaces H Kageshima, K Shiraishi Physical Review Letters 81 (26), 5936, 1998 | 287 | 1998 |
| Intrinsic origin of visible light emission from silicon quantum wires: Electronic structure and geometrically restricted exciton T Ohno, K Shiraishi, T Ogawa Physical review letters 69 (16), 2400, 1992 | 256 | 1992 |
| First-principles study of sulfur passivation of GaAs (001) surfaces T Ohno, K Shiraishi Physical Review B 42 (17), 11194, 1990 | 210 | 1990 |
| Momentum-matrix-element calculation using pseudopotentials H Kageshima, K Shiraishi Physical Review B 56 (23), 14985, 1997 | 204 | 1997 |
| Universal theory of Si oxidation rate and importance of interfacial Si emission H Kageshima, K Shiraishi, M Uematsu Japanese journal of applied physics 38 (9A), L971, 1999 | 201 | 1999 |
| First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics N Umezawa, K Shiraishi, T Ohno, H Watanabe, T Chikyow, K Torii, ... Applied Physics Letters 86 (14), 2005 | 190 | 2005 |
| Electronic structure of Si-skeleton materials K Takeda, K Shiraishi Physical Review B 39 (15), 11028, 1989 | 170 | 1989 |
| A massively-parallel electronic-structure calculations based on real-space density functional theory JI Iwata, D Takahashi, A Oshiyama, T Boku, K Shiraishi, S Okada, ... Journal of Computational Physics 229 (6), 2339-2363, 2010 | 169 | 2010 |
| Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-K MISFET with p+ poly-Si gates-A theoretical approach K Shiraishi, K Yamada, K Torii, Y Akasaka, K Nakajima, M Konno, ... Japanese Journal of Applied Physics 43 (11A), L1413, 2004 | 161 | 2004 |
| A new theoretical approach to adsorption–desorption behavior of Ga on GaAs surfaces Y Kangawa, T Ito, A Taguchi, K Shiraishi, T Ohachi Surface science 493 (1-3), 178-181, 2001 | 158 | 2001 |
| Modified oxygen vacancy induced fermi level pinning model extendable to P-metal pinning Y Akasaka, G Nakamura, K Shiraishi, N Umezawa, K Yamabe, O Ogawa, ... Japanese journal of applied physics 45 (12L), L1289, 2006 | 153 | 2006 |
| Impact of additional factors in threshold voltage variability of metal/high-k gate stacks and its reduction by controlling crystalline structure and grain size in the metal gates K Ohmori, T Matsuki, D Ishikawa, T Morooka, T Aminaka, Y Sugita, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 132 | 2008 |
| ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels K Kamiya, M Young Yang, SG Park, B Magyari-Köpe, Y Nishi, M Niwa, ... Applied Physics Letters 100 (7), 2012 | 116 | 2012 |
| Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation S Horiguchi, M Nagase, K Shiraishi, H Kageshima, Y Takahashi, ... Japanese Journal of Applied Physics 40 (1A), L29, 2001 | 112 | 2001 |
| Effect of the interface on self-diffusion of Si in semiconductor-grade S Fukatsu, T Takahashi, KM Itoh, M Uematsu, A Fujiwara, H Kageshima, ... Applied physics letters 83 (19), 3897-3899, 2003 | 110 | 2003 |
| Self-diffusion of Si in thermally grown under equilibrium conditions T Takahashi, S Fukatsu, KM Itoh, M Uematsu, A Fujiwara, H Kageshima, ... Journal of applied physics 93 (6), 3674-3676, 2003 | 105 | 2003 |
| Ga adatom diffusion on an As‐stabilized GaAs (001) surface via missing As dimer rows: First‐principles calculation K Shiraishi Applied physics letters 60 (11), 1363-1365, 1992 | 105 | 1992 |
Naoto UmezawaMitsubishi Chemical CorporationVerified email at m-chemical.co.jp
