Viktor Sverdlov
Viktor Sverdlov
Institute for Microelectronics, TU Wien
Verified email at - Homepage
Cited by
Cited by
The effect of general strain on the band structure and electron mobility of silicon
E Ungersboeck, S Dhar, G Karlowatz, V Sverdlov, H Kosina, S Selberherr
IEEE Transactions on Electron Devices 54 (9), 2183-2190, 2007
The universality of NBTI relaxation and its implications for modeling and characterization
T Grasser, W Gos, V Sverdlov, B Kaczer
2007 IEEE International Reliability Physics Symposium Proceedings. 45th†…, 2007
Nanoscale silicon MOSFETs: A theoretical study
VA Sverdlov, TJ Walls, KK Likharev
IEEE Transactions on Electron Devices 50 (9), 1926-1933, 2003
Strain-induced effects in advanced MOSFETs
V Sverdlov
Springer Science & Business media, 2011
CMOS-compatible spintronic devices: a review
A Makarov, T Windbacher, V Sverdlov, S Selberherr
Semiconductor Science and Technology 31 (11), 113006, 2016
Emerging memory technologies: Trends, challenges, and modeling methods
A Makarov, V Sverdlov, S Selberherr
Microelectronics Reliability 52 (4), 628-634, 2012
Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memory
H Mahmoudi, T Windbacher, V Sverdlov, S Selberherr
Solid-State Electronics 84, 191-197, 2013
Many-body wave function for a quantum dot in a weak magnetic field
A Harju, VA Sverdlov, RM Nieminen, V Halonen
Physical Review B 59 (8), 5622, 1999
Silicon spintronics: Progress and challenges
V Sverdlov, S Selberherr
Physics Reports 585, 1-40, 2015
Current transport models for nanoscale semiconductor devices
V Sverdlov, E Ungersboeck, H Kosina, S Selberherr
Materials Science and Engineering: R: Reports 58 (6), 228-270, 2008
Coulomb gap, Coulomb blockade, and dynamic activation energy in frustrated single-electron arrays
DM Kaplan, VA Sverdlov, KK Likharev
Physical Review B 68 (4), 045321, 2003
Two-band k∑ p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility
V Sverdlov, G Karlowatz, S Dhar, H Kosina, S Selberherr
Solid-State Electronics 52 (10), 1563-1568, 2008
Ultra-scaled Z-RAM cell
S Okhonin, M Nagoga, CW Lee, JP Colinge, A Afzalian, R Yan, ...
2008 IEEE International SOI Conference, 157-158, 2008
Qubit decoherence by Gaussian low-frequency noise
K Rabenstein, VA Sverdlov, DV Averin
Journal of Experimental and Theoretical Physics Letters 79 (12), 646-649, 2004
Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach
V Sverdlov, A Gehring, H Kosina, S Selberherr
Solid-State Electronics 49 (9), 1510-1515, 2005
Shot-noise suppression at two-dimensional hopping
VA Sverdlov, AN Korotkov, KK Likharev
Physical Review B 63 (8), 081302, 2001
Variational wave function for a two-electron quantum dot
A Harju, VA Sverdlov, B Barbiellini, RM Nieminen
Physica B: Condensed Matter 255 (1-4), 145-149, 1998
Reliability analysis and comparison of implication and reprogrammable logic gates in magnetic tunnel junction logic circuits
H Mahmoudi, T Windbacher, V Sverdlov, S Selberherr
IEEE Transactions on Magnetics 49 (12), 5620-5628, 2013
Reduction of switching time in pentalayer magnetic tunnel junctions with a composite‐free layer
A Makarov, V Sverdlov, D Osintsev, S Selberherr
physica status solidi (RRL)–Rapid Research Letters 5 (12), 420-422, 2011
Charging and discharging of oxide defects in reliability issues
W Goes, M Karner, V Sverdlov, T Grasser
IEEE Transactions on Device and Materials Reliability 8 (3), 491-500, 2008
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