Don Monroe

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Ya-Hong XieUniversity of California Los Angeles, Materials Sciences & EngineeringVerified email at ucla.edu
E A FitzgeraldCornell, ATT, MIT, Massachusetts Institute of Technology, NTUVerified email at mit.edu
Muhammad Ashraful AlamJai N. Gupta Professor of Electrical Engineering, Purdue UniversityVerified email at purdue.edu
Sang-Hyun OhMcKnight Professor of ECE, University of Minnesota Twin CitiesVerified email at umn.edu
Gregory TimpProfessor Electrical Engineering & Biological Studies, University of Notre DameVerified email at nd.edu
Martin L. GreenNISTVerified email at nist.gov
Leonard FeldmanProfessor of Physics and Materials ScienceVerified email at rutgers.edu
Michael HilkeMcGill UniversityVerified email at physics.mcgill.ca
Andrea CalifanoColumbia Verified email at c2b2.columbia.edu
G StolovitzkyChief Science Officer, GeneDxVerified email at genedx.com
M. HongNatl Taiwan Univ. Bell LaboratoriesVerified email at phys.ntu.edu.tw
Richard E. HowardRutgers UniversityVerified email at winlab.rutgers.edu
Conor RaffertyAbcam, PLCVerified email at abcam.com
A.F.J. LeviUniversity of Southern CaliforniaVerified email at usc.edu
Alice E WhiteProfessor of Mechanical Engineering, Boston UniversityVerified email at bu.edu
Bruce van DoverProfessor of Materials Science, Cornell UniversityVerified email at cornell.edu
Randall L. HeadrickProfessor of Physics, University of VermontVerified email at uvm.edu
Rafael KleimanMcMaster UniversityVerified email at mcmaster.ca
George K CellerProfessor of Materials Science, Rutgers UniversityVerified email at rci.rutgers.edu
Jennifer M. McKinleyUniversity of Central FloridaVerified email at ucf.edu

Don Monroe

Freelance science writer

Verified email at DonMonroe.info - Homepage


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Hopping in exponential band tails D Monroe Physical Review Letters 54 (2), 146, 1985	714	1985
Relaxed Ge_xSi_1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992	685	1992
Decay of ultraviolet‐induced fiber Bragg gratings T Erdogan, V Mizrahi, PJ Lemaire, D Monroe Journal of applied physics 76 (1), 73-80, 1994	644	1994
Looking for chinks in the armor of bacterial biofilms D Monroe PLoS biology 5 (11), e307, 2007	529	2007
Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs SH Oh, D Monroe, JM Hergenrother IEEE electron device letters 21 (9), 445-447, 2000	453	2000
Dialogue on reverse‐engineering assessment and methods: the DREAM of high‐throughput pathway inference G Stolovitzky, DON Monroe, A Califano Annals of the New York Academy of Sciences 1115 (1), 1-22, 2007	444	2007
Extremely high electron mobility in Si/Ge_xSi_1−x structures grown by molecular beam epitaxy YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman Applied Physics Letters 59 (13), 1611-1613, 1991	353	1991
The vertical replacement-gate (VRG) MOSFET: A 50-nm vertical MOSFET with lithography-independent gate length JM Hergenrother, D Monroe, FP Klemens, A Komblit, GR Weber, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999	267*	1999
Very high mobility two‐dimensional hole gas in Si/Ge_xSi_1−x/Ge structures grown by molecular beam epitaxy YH Xie, D Monroe, EA Fitzgerald, PJ Silverman, FA Thiel, GP Watson Applied physics letters 63 (16), 2263-2264, 1993	249	1993
Ultra-thin gate dielectrics: They break down, but do they fail? BE Weir, PJ Silverman, D Monroe, KS Krisch, MA Alam, GB Alers, ... International Electron Devices Meeting. IEDM Technical Digest, 73-76, 1997	247	1997
Semiconductor heterostructure devices with strained semiconductor layers D Brasen, EA Fitzgerald Jr, ML Green, DP Monroe, PJ Silverman, YH Xie US Patent 5,442,205, 1995	228	1995
Neuromorphic computing gets ready for the (really) big time D Monroe Communications of the ACM 57 (6), 13-15, 2014	227	2014
Comparison of mobility‐limiting mechanisms in high‐mobility Si_1−xGe_x heterostructures D Monroe, YH Xie, EA Fitzgerald, PJ Silverman, GP Watson Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993	139	1993
New universality at the magnetic field driven insulator to integer quantum Hall effect transitions SH Song, D Shahar, DC Tsui, YH Xie, D Monroe Physical review letters 78 (11), 2200, 1997	118	1997
Exactly exponential band tail in a glassy semiconductor D Monroe, MA Kastner Physical Review B 33 (12), 8881, 1986	112	1986
Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si YH Xie, EA Fitzgerald, D Monroe, PJ Silverman, GP Watson Journal of applied physics 73 (12), 8364-8370, 1993	110	1993
Process for fabricating vertical transistors JM Hergenrother, DP Monroe, GR Weber US Patent 6,197,641, 2001	109	2001
Experimental evidence for a two-dimensional quantized Hall insulator M Hilke, D Shahar, SH Song, DC Tsui, YH Xie, D Monroe Nature 395 (6703), 675-677, 1998	105	1998
CMOS integrated circuit having vertical transistors and a process for fabricating same JM Hergenrother, DP Monroe US Patent 6,653,181, 2003	102	2003
Quantum leap D Monroe Communications of the ACM 62 (1), 10-12, 2018	96	2018

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