| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 537 | 2019 |
| Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ... IEEE Electron Device Letters 24 (2), 87-89, 2003 | 431 | 2003 |
| Electrode dependence of filament formation in HfO2 resistive-switching memory KL Lin, TH Hou, J Shieh, JH Lin, CT Chou, YJ Lee Journal of Applied Physics 109 (8), 2011 | 337 | 2011 |
| Mitigating effects of non-ideal synaptic device characteristics for on-chip learning PY Chen, B Lin, IT Wang, TH Hou, J Ye, S Vrudhula, J Seo, Y Cao, S Yu 2015 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 194-199, 2015 | 224 | 2015 |
| Bipolar Nonlinear Selector for 1S1R Crossbar Array Applications JJ Huang, YM Tseng, CW Hsu, TH Hou IEEE Electron Device Letters 32 (10), 1427-1429, 2011 | 220 | 2011 |
| Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode JJ Huang, CW Kuo, WC Chang, TH Hou Applied Physics Letters 96 (26), 2010 | 196 | 2010 |
| Optically initialized robust valley-polarized holes in monolayer WSe2 WT Hsu, YL Chen, CH Chen, PS Liu, TH Hou, LJ Li, WH Chang Nature communications 6 (1), 8963, 2015 | 184 | 2015 |
| Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device YF Wang, YC Lin, IT Wang, TP Lin, TH Hou Scientific reports 5 (1), 10150, 2015 | 180 | 2015 |
| Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application CH Chen, TL Lee, TH Hou, CL Chen, CC Chen, JW Hsu, KL Cheng, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 56-57, 2004 | 173 | 2004 |
| Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations HS PhilipáWong Nanoscale 6 (11), 5698-5702, 2014 | 171 | 2014 |
| 3D Ta/TaOx/TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications IT Wang, CC Chang, LW Chiu, T Chou, TH Hou Nanotechnology 27 (36), 365204, 2016 | 168 | 2016 |
| One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications JJ Huang, YM Tseng, WC Luo, CW Hsu, TH Hou 2011 international electron devices meeting, 31.7. 1-31.7. 4, 2011 | 147 | 2011 |
| Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou 2013 Symposium on VLSI Technology, T166-T167, 2013 | 140 | 2013 |
| Fully parallel write/read in resistive synaptic array for accelerating on-chip learning L Gao, IT Wang, PY Chen, S Vrudhula, J Seo, Y Cao, TH Hou, S Yu Nanotechnology 26 (45), 455204, 2015 | 125 | 2015 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 121 | 2021 |
| High-k gate stacks for planar, scaled CMOS integrated circuits HR Huff, A Hou, C Lim, Y Kim, J Barnett, G Bersuker, GA Brown, ... Microelectronic Engineering 69 (2-4), 152-167, 2003 | 121 | 2003 |
| Mitigating asymmetric nonlinear weight update effects in hardware neural network based on analog resistive synapse CC Chang, PC Chen, T Chou, IT Wang, B Hudec, CC Chang, CM Tsai, ... IEEE Journal on Emerging and Selected Topics in Circuits and Systems 8 (1 …, 2017 | 114 | 2017 |
| 3D synaptic architecture with ultralow sub-10 fJ energy per spike for neuromorphic computation IT Wang, YC Lin, YF Wang, CW Hsu, TH Hou 2014 IEEE international electron devices meeting, 28.5. 1-28.5. 4, 2014 | 110 | 2014 |
| Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices TH Hou, MF Wang, CC Chen, CW Yang, LG Yao, SC Chen US Patent 6,890,811, 2005 | 107 | 2005 |
| Conventional n-channel MOSFET devices using single layer HfO/sub 2/and ZrO/sub 2/as high-k gate dielectrics with polysilicon gate electrode Y Kim, G Gebara, M Freiler, J Barnett, D Riley, J Chen, K Torres, JE Lim, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 94 | 2001 |
I-Ting WangTaiwan Semiconductor Research Institute, NARLabsVerified email at narlabs.org.tw
