| Hot-electron effects in AlGaN/GaN HEMTs under semi-ON DC stress A Minetto, B Deutschmann, N Modolo, A Nardo, M Meneghini, E Zanoni, ... IEEE Transactions on Electron Devices 67 (11), 4602-4605, 2020 | 48 | 2020 |
| A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs N Modolo, SW Tang, HJ Jiang, C De Santi, M Meneghini, TL Wu IEEE Transactions on Electron Devices 68 (4), 1489-1494, 2020 | 36 | 2020 |
| A physics-based approach to model hot-electron trapping kinetics in p-GaN HEMTs N Modolo, C De Santi, A Minetto, L Sayadi, S Sicre, G Prechtl, ... IEEE Electron Device Letters 42 (5), 673-676, 2021 | 33 | 2021 |
| Cumulative hot-electron trapping in GaN-based power HEMTs observed by an ultrafast (10 V/Ns) on-wafer methodology N Modolo, C De Santi, A Minetto, L Sayadi, S Sicre, G Prechtl, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2021 | 25 | 2021 |
| Trap-state mapping to model GaN transistors dynamic performance N Modolo, C De Santi, A Minetto, L Sayadi, G Prechtl, G Meneghesso, ... Scientific Reports 12 (1), 1755, 2022 | 16 | 2022 |
| Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors N Modolo, C De Santi, A Minetto, L Sayadi, S Sicre, G Prechtl, ... Semiconductor Science and Technology 36 (1), 014001, 2020 | 15 | 2020 |
| Understanding -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model C Sharma, N Modolo, TL Wu, M Meneghini, G Meneghesso, E Zanoni, ... IEEE Transactions on Electron Devices 67 (3), 1126-1131, 2020 | 14 | 2020 |
| A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects N Modolo, M Meneghini, A Barbato, A Nardo, C De Santi, G Meneghesso, ... Microelectronics Reliability 114, 113830, 2020 | 12 | 2020 |
| A comprehensive kinetical modeling of polymorphic phase distribution of ferroelectric-dielectrics and interfacial energy effects on negative capacitance FETs YT Tang, CL Fan, YC Kao, N Modolo, CJ Su, TL Wu, KH Kao, PJ Wu, ... 2019 Symposium on VLSI Technology, T222-T223, 2019 | 12 | 2019 |
| Drain field plate impact on the hard-switching performance of AlGaN/GaN HEMTs A Minetto, N Modolo, L Sayadi, C Koller, C Ostermaier, M Meneghini, ... IEEE Transactions on Electron Devices 68 (10), 5003-5008, 2021 | 10 | 2021 |
| Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results E Zanoni, F Rampazzo, C De Santi, Z Gao, C Sharma, N Modolo, ... physica status solidi (a) 219 (24), 2100722, 2022 | 8 | 2022 |
| Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs N Modolo, M Fregolent, F Masin, A Benato, A Bettini, M Buffolo, ... Microelectronics Reliability 138, 114708, 2022 | 8 | 2022 |
| Review on the degradation of GaN-based lateral power transistors C De Santi, M Buffolo, I Rossetto, T Bordignon, E Brusaterra, A Caria, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 1, 100018, 2021 | 7 | 2021 |
| Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation C Sharma, N Modolo, HH Chen, YY Tseng, SW Tang, M Meneghini, ... Microelectronics Reliability 100, 113349, 2019 | 7 | 2019 |
| Compact modeling of nonideal trapping/detrapping processes in GaN power devices N Modolo, C De Santi, G Baratella, A Bettini, M Borga, N Posthuma, ... IEEE Transactions on Electron Devices 69 (8), 4432-4437, 2022 | 5 | 2022 |
| A generalized approach to determine the switching reliability of GaN HEMTs on-wafer level N Modolo, A Minetto, C De Santi, L Sayadi, S Sicre, G Prechtl, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 5 | 2021 |
| Charge Trapping in GaN Power Transistors: Challenges and Perspectives M Meneghini, N Modolo, A Nardo, C De Santi, A Minetto, L Sayadi, ... 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021 | 4 | 2021 |
| Hot electron effects in AlGaN/GaN HEMTs during hard-switching events A Minetto, N Modolo, M Meneghini, E Zanoni, L Sayadi, S Sicre, ... Microelectronics Reliability 126, 114208, 2021 | 4 | 2021 |
| Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress Z Gao, F Rampazzo, M Meneghini, N Modolo, C De Santi, H Blanck, ... Microelectronics Reliability 126, 114318, 2021 | 4 | 2021 |
| Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier Z Gao, F Chiocchetta, C De Santi, N Modolo, F Rampazzo, M Meneghini, ... 2022 IEEE International Reliability Physics Symposium (IRPS), P51-1-P51-6, 2022 | 2 | 2022 |
Matteo MeneghiniFull Professor at the University of PadovaVerified email at dei.unipd.it
