| Spatially-resolved spectroscopic measurements of Ec− 0.57 eV traps in AlGaN/GaN high electron mobility transistors DW Cardwell, A Sasikumar, AR Arehart, SW Kaun, J Lu, S Keller, ... Applied Physics Letters 102 (19), 2013 | 116 | 2013 |
| Studies on novel silicone/phosphorus/sulphur containing nano-hybrid epoxy anticorrosive and antifouling coatings SA Kumar, A Sasikumar Progress in Organic Coatings 68 (3), 189-200, 2010 | 100 | 2010 |
| Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors AR Arehart, A Sasikumar, S Rajan, GD Via, B Poling, B Winningham, ... Solid-State Electronics 80, 19-22, 2013 | 75 | 2013 |
| Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy A Sasikumar, AR Arehart, S Martin-Horcajo, MF Romero, Y Pei, D Brown, ... Applied Physics Letters 103 (3), 2013 | 68 | 2013 |
| Banking and FinTech (financial technology) embraced with IoT device G Suseendran, E Chandrasekaran, D Akila, A Sasi Kumar Data Management, Analytics and Innovation: Proceedings of ICDMAI 2019 …, 2020 | 58 | 2020 |
| Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs AR Arehart, A Sasikumar, GD Via, B Winningham, B Poling, E Heller, ... 2010 International Electron Devices Meeting, 20.1. 1-20.1. 4, 2010 | 56 | 2010 |
| Application reliability validation of GaN power devices SR Bahl, J Joh, L Fu, A Sasikumar, T Chatterjee, S Pendharkar 2016 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2016 | 52 | 2016 |
| Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs A Sasikumar, A Arehart, S Kolluri, MH Wong, S Keller, SP DenBaars, ... IEEE electron device letters 33 (5), 658-660, 2012 | 42 | 2012 |
| Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures Z Zhang, D Cardwell, A Sasikumar, ECH Kyle, J Chen, EX Zhang, ... Journal of Applied Physics 119 (16), 2016 | 33 | 2016 |
| Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs A Sasikumar, A Arehart, SA Ringel, S Kaun, MH Wong, UK Mishra, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 2C. 3.1-2C. 3.6, 2012 | 27 | 2012 |
| Multi Attribute Utility Theory–An Over View M Shanmuganathan, K Kajendran, AN Sasikumar, M Mahendran International Journal of Scientific & Engineering Research 9 (3), 698-706, 2018 | 25 | 2018 |
| Evidence for causality between GaN RF HEMT degradation and the EC-0.57 áeV trap in GaN AR Arehart, A Sasikumar, GD Via, B Poling, ER Heller, SA Ringel Microelectronics Reliability 56, 45-48, 2016 | 16 | 2016 |
| Defects in GaN based transistors A Sasikumar, AR Arehart, SW Kaun, J Chen, EX Zhang, DM Fleetwood, ... Gallium Nitride Materials and Devices IX 8986, 120-128, 2014 | 15 | 2014 |
| Toward a physical understanding of the reliability-limiting Ec-0.57 eV trap in GaN HEMTs A Sasikumar, D Cardwell, A Arehart, J Lu, S Kaun, S Keller, U Mishra, ... Reliability Physics Symposium, 2014 IEEE International, 2C.1.1 - 2C.1.6, 2014 | 14 | 2014 |
| a. R. Arehart, and SA Ringel Z Zhang, D Cardwell, A Sasikumar, ECH Kyle, J Chen, EX Zhang, ... J. Appl. Phys 119, 165704, 2016 | 13 | 2016 |
| Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs A Sasikumar, Z Zhang, P Kumar, EX Zhang, DM Fleetwood, RD Schrimpf, ... 2015 IEEE International Reliability Physics Symposium, 2E. 3.1-2E. 3.6, 2015 | 11 | 2015 |
| Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs A Sasikumar, AR Arehart, DW Cardwell, CM Jackson, W Sun, Z Zhang, ... Microelectronics Reliability 56, 37-44, 2016 | 10 | 2016 |
| Sign language recognition for deaf and dumb people using android environment A Gayathri, A Sasi Kumar International journal of current engineering and scientific research (IJCESR) 4, 2017 | 9 | 2017 |
| Computer vision and machine learning based facial expression analysis A Balasundaram, S Ashokkumar, AN Sasikumar, K Kajendran, ... International Journal of Advanced Trends in Computer Science and Engineering …, 2020 | 7 | 2020 |
| Effect of Acorus calamus Linn on histomorphometric changes in the CA1 and CA3 regions of Hippocampus in Wistar Albino rats S Subamalani, A Sasikumar, R Vijayaragavan, S Senthilkumar, ... Research Journal of Pharmacy and Technology 12 (7), 3531-3536, 2019 | 7 | 2019 |
