| Imaging rotational dynamics of nanoparticles in liquid by 4D electron microscopy X Fu, B Chen, J Tang, MT Hassan, AH Zewail Science 355 (6324), 494-498, 2017 | 88 | 2017 |
| Structural characterization and iron detection at Σ3 grain boundaries in multicrystalline silicon B Chen, J Chen, T Sekiguchi, M Saito, K Kimoto Journal of Applied Physics 105 (11), 113502, 2009 | 61 | 2009 |
| Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode B Chen, J Chen, T Sekiguchi, T Ohyanagi, H Matsuhata, A Kinoshita, ... Applied Physics Letters 93 (3), 033514-033514-3, 2008 | 57 | 2008 |
| Strengthening Brittle Semiconductor Nanowires through Stacking Faults: Insights from in Situ Mechanical Testing B Chen, J Wang, Q Gao, Y Chen, X Liao, C Lu, HH Tan, YW Mai, J Zou, ... Nano letters 13 (9), 4369-4373, 2013 | 56 | 2013 |
| Surface defects and accompanying imperfections in 4H–SiC: Optical, structural and electrical characterization B Chen, H Matsuhata, T Sekiguchi, K Ichinoseki, H Okumura Acta Materialia 60 (1), 51-58, 2012 | 53 | 2012 |
| Cheap, gram-scale fabrication of BN nanosheets via substitution reaction of graphite powders and their use for mechanical reinforcement of polymers F Liu, X Mo, H Gan, T Guo, X Wang, B Chen, J Chen, S Deng, N Xu, ... Scientific reports 4 (1), 1-8, 2014 | 52 | 2014 |
| Anelastic Behavior in GaAs Semiconductor Nanowires B Chen, Q Gao, Y Wang, X Liao, YW Mai, HH Tan, J Zou, SP Ringer, ... Nano letters 13 (7), 3169-3172, 2013 | 49 | 2013 |
| Photoinduced nanobubble-driven superfast diffusion of nanoparticles imaged by 4D electron microscopy X Fu, B Chen, J Tang, AH Zewail Science Advances 3 (8), e1701160, 2017 | 41 | 2017 |
| Correlation between residual strain and electrically active grain boundaries in multicrystalline silicon J Chen, B Chen, T Sekiguchi, M Fukuzawa, M Yamada Applied Physics Letters 93, 112105, 2008 | 40 | 2008 |
| Optical manipulation of magnetic vortices visualized in situ by Lorentz electron microscopy X Fu, SD Pollard, B Chen, BK Yoo, H Yang, Y Zhu Science advances 4 (7), eaat3077, 2018 | 38 | 2018 |
| Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography H Matsuhata, H Yamaguchi, T Yamashita, T Tanaka, B Chen, T Sekiguchi Philosophical Magazine 94 (15), 1674-1685, 2014 | 37 | 2014 |
| Helical growth of aluminum nitride: new insights into its growth habit from nanostructures to single crystals XH Zhang, RW Shao, L Jin, JY Wang, K Zheng, CL Zhao, JC Han, B Chen, ... Scientific reports 5 (1), 1-12, 2015 | 25 | 2015 |
| Evidence for a general mechanism modulating carrier lifetime in SiC B Chen, T Sekiguchi, T Ohyanagi, H Matsuhata, A Kinoshita, H Okumura Physical Review B 81 (23), 233203, 2010 | 25 | 2010 |
| Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layers B Chen, T Sekiguchi, T Ohyanagi, H Matsuhata, A Kinoshita, H Okumura Journal of Applied Physics 106 (7), 074502-074502-4, 2009 | 24 | 2009 |
| Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC B Chen, H Matsuhata, T Sekiguchi, A Kinoshita, K Ichinoseki, H Okumura Applied Physics Letters 100 (13), 132108-132108-4, 2012 | 23 | 2012 |
| Pinning of recombination-enhanced dislocation motion in 4H–SiC: Role of Cu and EH complex B Chen, H Matsuhata, T Sekiguchi, T Ohyanagi, A Kinoshita, H Okumura Applied Physics Letters 96, 212110, 2010 | 23 | 2010 |
| Cathodoluminescence study of dislocation-related luminescence from small-angle grain boundaries in multicrystalline silicon W Lee, J Chen, B Chen, J Chang, T Sekiguchi Applied Physics Letters 94, 112103, 2009 | 22 | 2009 |
| Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy B Chen, X Fu, J Tang, M Lysevych, HH Tan, C Jagadish, AH Zewail Proceedings of the National Academy of Sciences 114 (49), 12876-12881, 2017 | 21 | 2017 |
| Grain Boundaries in Multicrystalline Si J Chen, B Chen, W Lee, M Fukuzawa, M Yamada, T Sekiguchi Solid State Phenomena 156, 19-26, 2010 | 19 | 2010 |
| Electron-beam-induced current study of electrical activity of dislocations in 4H–SiC homoeptaxial film B Chen, J Chen, T Sekiguchi, A Kinoshita, H Matsuhata, H Yamaguchi, ... Journal of Materials Science: Materials in Electronics 19, 219-223, 2008 | 19 | 2008 |
Xuewen FuProfessor, Nankai UniversityVerified email at nankai.edu.cn
