New York University Of Abu Dhabi
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High performance and bendable few-layered InSe photodetectors with broad spectral response
SR Tamalampudi, YY Lu, RK U, R Sankar, CD Liao, CH Cheng, FC Chou, ...
Nano letters 14 (5), 2800-2806, 2014
High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors
RK Ulaganathan, YY Lu, CJ Kuo, SR Tamalampudi, R Sankar, ...
Nanoscale 8 (4), 2284-2292, 2016
Multi-Valley Superconductivity in Ion-Gated MoS2 Layers
E Piatti, D De Fazio, D Daghero, SR Tamalampudi, D Yoon, AC Ferrari, ...
Nano letters 18 (8), 4821-4830, 2018
Chemical vapor deposition synthesis and Raman spectroscopic characterization of large-area graphene sheets
CD Liao, YY Lu, SR Tamalampudi, HC Cheng, YT Chen
The Journal of Physical Chemistry A 117 (39), 9454-9461, 2013
R. Kumar U, R. Sankar, C.-D. Liao, K. Moorthy B, C.-H. Cheng, FC Chou and Y.-T. Chen
SR Tamalampudi, YY Lu
Nano Lett 14, 2800-2806, 2014
Insights into graphene wettability transparency by locally probing its surface free energy
JY Lu, T Olukan, SR Tamalampudi, A Al-Hagri, CY Lai, MA Al Mahri, ...
Nanoscale 11 (16), 7944-7951, 2019
Direct growth of single-layer terminated vertical graphene array on germanium by plasma enhanced chemical vapor deposition
A Al-Hagri, R Li, NS Rajput, JY Lu, S Cong, K Sloyan, MA Almahri, ...
Carbon 155, 320-325, 2019
Enhanced photoelectrochemical performance of atomic layer deposited Hf-doped ZnO
B Alfakes, C Garlisi, J Villegas, A Al-Hagri, S Tamalampudi, NS Rajput, ...
Surface and Coatings Technology 385, 125352, 2020
Thickness-dependent resonant Raman and E′ photoluminescence spectra of indium selenide and indium selenide/graphene heterostructures
SR Tamalampudi, R Sankar, H Apostoleris, MA Almahri, B Alfakes, ...
The Journal of Physical Chemistry C 123 (24), 15345-15353, 2019
High-Temperature Defect-Induced Hopping Conduction in Multilayered Germanium Sulfide for Optoelectronic Applications in Harsh Environments
SR Tamalampudi, S Patole, B Alfakes, R Sankar, I Almansouri, M Chiesa, ...
ACS Applied Nano Materials 2 (4), 2169-2175, 2019
Optoelectronic tunability of Hf-doped ZnO for photovoltaic applications
B Alfakes, J Villegas, H Apostoleris, R Devarapalli, S Tamalampudi, JY Lu, ...
The Journal of Physical Chemistry C 123 (24), 15258-15266, 2019
Short-wavelength infrared (SWIR) photodetector based on multi-layer 2D GaGeTe
SR Tamalampudi, G Dushaq, JE Villegas, NS Rajput, B Paredes, ...
Optics Express 29 (24), 39395-39405, 2021
Rapid discrimination of chemically distinctive surface terminations in 2D material based heterostructures by direct van der Waals identification
SR Tamalampudi, S Santos, CY Lai, TA Olukan, JY Lu, N Rajput, ...
Review of Scientific Instruments 91 (2), 2020
On-chip integration of 2D Van der Waals germanium phosphide (GeP) for active silicon photonics devices
G Dushaq, B Paredes, JE Villegas, SR Tamalampudi, M Rasras
Optics Express 30 (10), 15986-15997, 2022
Si2Te3 Photodetectors for Optoelectronic Integration at Telecommunication Wavelengths
SR Tamalampudi, G Dushaq, JE Villegas, B Paredes, MS Rasras
IEEE Journal of Selected Topics in Quantum Electronics 28 (3: Hybrid …, 2021
Superposition of semiconductor and semi-metal properties of self-assembled 2D SnTiS3 heterostructures
SR Tamalampudi, JY Lu, N Rajput, CY Lai, B Alfakes, R Sankar, ...
npj 2D Materials and Applications 4 (1), 23, 2020
A Multi-layered GaGeTe Electro-Optic Device Integrated in Silicon Photonics
SR Tamalampudi, G Dushaq, JE Villegas, B Paredes, MS Rasras
Journal of Lightwave Technology, 2023
Revealing the Quasi-Periodic Crystallographic Structure of Self-Assembled SnTiS3 Misfit Compound
NS Rajput, H Baik, JY Lu, SR Tamalampudi, R Sankar, A Al Ghaferi, ...
The Journal of Physical Chemistry C 125 (18), 9956-9964, 2021
Anisotropic Van Der Waals 2D GeAs Integrated on Silicon Four-Waveguide Crossing
G Dushaq, JE Villegas, B Paredes, SR Tamalampudi, MS Rasras
Journal of Lightwave Technology 41 (6), 1784-1789, 2022
Fast-Response Amorphous In2Te3 Short-Wave Infrared (SWIR) Photodetector
SR Tamalampudi, G Dushaq, NS Rajput, M Chiesa, MS Rasras
IEEE Electron Device Letters 43 (12), 2125-2128, 2022
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