| Ultra low power: Emerging devices and their benefits for integrated circuits AM Ionescu, L De Michielis, N Dagtekin, G Salvatore, J Cao, A Rusu, ... 2011 International Electron Devices Meeting, 16.1. 1-16.1. 4, 2011 | 81 | 2011 |
| Stanford memory trends HSP Wong, C Ahn, J Cao, HY Chen, SW Fong, Z Jiang, C Neumann, ... tech. report, 2016 | 58 | 2016 |
| Vertical and lateral copper transport through graphene layers L Li, X Chen, CH Wang, J Cao, S Lee, A Tang, C Ahn, S Singha Roy, ... ACS nano 9 (8), 8361-8367, 2015 | 48 | 2015 |
| Cu diffusion barrier: Graphene benchmarked to TaN for ultimate interconnect scaling L Li, X Chen, CH Wang, S Lee, J Cao, SS Roy, MS Arnold, HSP Wong 2015 Symposium on VLSI Technology (VLSI Technology), T122-T123, 2015 | 31 | 2015 |
| Resist-assisted assembly of single-walled carbon nanotube devices with nanoscale precision J Cao, C Nyffeler, K Lister, AM Ionescu Carbon 50 (5), 1720-1726, 2012 | 29 | 2012 |
| Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS) Z Jiang, Z Wang, X Zheng, S Fong, S Qin, HY Chen, C Ahn, J Cao, Y Nishi, ... 2016 IEEE international electron devices meeting (IEDM), 21.3. 1-21.3. 4, 2016 | 18 | 2016 |
| Wafer-level hysteresis-free resonant carbon nanotube transistors J Cao, ST Bartsch, AM Ionescu ACS nano 9 (3), 2836-2842, 2015 | 14 | 2015 |
| Optimization and mechanism on chemical mechanical planarization of hafnium oxide for RRAM devices K Zhang, Y Feng, J Cao, F Wang, Y Han, Y Yuan, HSP Wong ECS Journal of Solid State Science and Technology 3 (7), P249, 2014 | 8 | 2014 |
| Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube field-effect transistors J Cao, AM Ionescu Applied Physics Letters 100 (6), 2012 | 8 | 2012 |
| 3D nano-electro-mechanical multiple-state carbon nanotube device structures and methods of fabrication CAO Ji, MA Ionescu US Patent 9,117,889, 2015 | 6 | 2015 |
| Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors J Cao, AM Ionescu Solid-state electronics 74, 121-125, 2012 | 6 | 2012 |
| Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis J Cao, A Arun, C Nyffeler, AM Ionescu Microelectronic engineering 88 (8), 2463-2465, 2011 | 6 | 2011 |
| Large-scale assembly of tunable resonant-body carbon nanotube transistors without hysteresis J Cao, ST Bartsch, AM Ionescu 2012 International Electron Devices Meeting, 15.3. 1-15.3. 4, 2012 | 5 | 2012 |
| Self-assembled nano-electro-mechanical tri-state carbon nanotube switches for reconfigurable integrated circuits J Cao, WA Vitale, AM Ionescu 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems …, 2012 | 4 | 2012 |
| Stanford memory trends (2017) HSP Wong, C Ahn, J Cao, HY Chen, SB Eryilmaz, SW Fong, JA Incorvia, ... | 3 | 2019 |
| Sub-5 nm gap formation for low power NEM switches J Cao, L Li, K Kato, TJK Liu, HSP Wong 2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-3, 2015 | 2 | 2015 |
| Lateral gate suspended-body carbon nanotube field-effect-transistors with sub-100nm air gap by precise positioning method J Cao, AM Ionescu 69th Device Research Conference, 189-190, 2011 | 2 | 2011 |
| Self-aligned double-gate suspended-body carbon nanotube field-effect-transistors for RF applications J Cao, AM Ionescu 2011 16th International Solid-State Sensors, Actuators and Microsystems …, 2011 | 2 | 2011 |
| Self-aligned back-gated suspended body single-walled carbon nanotube field-effect-transistors fabricated by high-precision positioning method J Cao, AM Ionescu Proceedings of 2011 International Symposium on VLSI Technology, Systems and …, 2011 | 2 | 2011 |
| T-shaped body silicon-on-insulator (SOI) MOSFET J Cao, D Li, W Ke, L Sun, R Han, S Zhang 2006 8th International Conference on Solid-State and Integrated Circuit …, 2006 | 2 | 2006 |
A.M. IonescuProfessor of NanoelectronicsVerified email at epfl.ch
