| Direct mapping of charge distribution during lithiation of Ge nanowires using off-axis electron holography Z Gan, M Gu, J Tang, CY Wang, Y He, KL Wang, C Wang, DJ Smith, ... Nano letters 16 (6), 3748-3753, 2016 | 37 | 2016 |
| Determination of polarization-fields across polytype interfaces in InAs nanopillars. L Li, Z Gan, MR McCartney, H Liang, H Yu, WJ Yin, Y Yan, Y Gao, J Wang, ... Advanced Materials (Deerfield Beach, Fla.) 26 (7), 1052-1057, 2013 | 37 | 2013 |
| Mapping electrostatic profiles across axial pn junctions in Si nanowires using off-axis electron holography Z Gan, DE Perea, J Yoo, S Tom Picraux, DJ Smith, MR McCartney Applied Physics Letters 103 (15), 2013 | 26 | 2013 |
| Atomic configurations at InAs partial dislocation cores associated with Z-shape faulted dipoles L Li, Z Gan, MR McCartney, H Liang, H Yu, Y Gao, J Wang, DJ Smith Scientific reports 3 (1), 3229, 2013 | 16 | 2013 |
| Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography Z Gan, DE Perea, J Yoo, Y He, RJ Colby, JE Barker, M Gu, SX Mao, ... Journal of Applied Physics 120 (10), 2016 | 13 | 2016 |
| Determination of mean inner potential and inelastic mean free path of ZnTe using off-axis electron holography and dynamical effects affecting phase determination Z Gan, M DiNezza, YH Zhang, DJ Smith, MR McCartney Microscopy and Microanalysis 21 (6), 1406-1412, 2015 | 11 | 2015 |
| Measurement of mean inner potential and inelastic mean free path of ZnO nanowires and nanosheet Z Gan, S Ahn, H Yu, DJ Smith, MR McCartney Materials Research Express 2 (10), 105003, 2015 | 4 | 2015 |
| Mapping the electrostatic profile across axial pn junctions in Si nanowires using off-axis electron holography Z Gan, DJ Smith, MR McCartney, DE Perea, ST Picraux Microscopy and Microanalysis 18 (S2), 1826-1827, 2012 | 2 | 2012 |
| Characterization of abrupt heterojunctions in SiGe NW using off-axis electron holography Z Gan, D Perea, T Picraux, D Smith, M McCartney Microscopy and Microanalysis 19 (S2), 1386-1387, 2013 | 1 | 2013 |
| Characterization of Semiconductor Materials Using Electron Holography L Zhou, Z Gan, MG Han, DJ Smith, MR McCartney Microscopy and Microanalysis 23 (S1), 1404-1405, 2017 | | 2017 |
| Characterization of Trapped Charge in Ge/LixGe Core/Shell Structure during Lithiation using Off-axis Electron Holography Z Gan, M Gu, J Tang, CY Wang, KL Wang, CM Wang, DJ Smith, ... Microscopy and Microanalysis 21 (S3), 1397-1398, 2015 | | 2015 |
| Characterization of Electrostatic Potential and Trapped Charge in Semiconductor Nanostructures using Off-Axis Electron Holography Z Gan Arizona State University, 2015 | | 2015 |
| In situ biasing of tapered Si-Ge nw heterojunctions using off-axis electron holography Z Gan, D Perea, Y He, R Colby, M Gu, Y Jinkyoung, C Wang, ST Picraux, ... Microscopy and Microanalysis 20 (S3), 256-257, 2014 | | 2014 |
| Charge Redistribution at ‘Polytype’Heterojunctions in InAs (Sb) Nanopillars L Li, Z Gan, H Liang, H Yu, D Smith, M Martha Microscopy and Microanalysis 18 (S2), 1812-1813, 2012 | | 2012 |
Martha McCartneyArizona State UniversityVerified email at asu.edu
