| Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design BD Olson, DR Ball, KM Warren, LW Massengill, NF Haddad, SE Doyle, ... IEEE transactions on nuclear science 52 (6), 2132-2136, 2005 | 212 | 2005 |
| The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ... IEEE transactions on nuclear science 52 (6), 2125-2131, 2005 | 195 | 2005 |
| Single-event burnout mechanisms in SiC power MOSFETs AF Witulski, DR Ball, KF Galloway, A Javanainen, JM Lauenstein, ... IEEE Transactions on Nuclear Science 65 (8), 1951-1955, 2018 | 124 | 2018 |
| Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology BD Olson, OA Amusan, S Dasgupta, LW Massengill, AF Witulski, ... IEEE Transactions on Nuclear Science 54 (4), 894-897, 2007 | 121 | 2007 |
| The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process JR Ahlbin, MJ Gadlage, DR Ball, AW Witulski, BL Bhuva, RA Reed, ... IEEE Transactions on Nuclear Science 57 (6), 3380-3385, 2010 | 118 | 2010 |
| Role of heavy-ion nuclear reactions in determining on-orbit single event error rates CL Howe, RA Weller, RA Reed, MH Mendenhall, RD Schrimpf, ... IEEE Transactions on Nuclear Science 52 (6), 2182-2188, 2005 | 93 | 2005 |
| Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes DR Ball, KF Galloway, RA Johnson, ML Alles, AL Sternberg, BD Sierawski, ... IEEE Transactions on Nuclear Science 67 (1), 22-28, 2019 | 84 | 2019 |
| Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance MP King, X Wu, M Eller, S Samavedam, MR Shaneyfelt, AI Silva, ... IEEE Transactions on Nuclear Science 64 (1), 285-292, 2016 | 78 | 2016 |
| Geometry dependence of total-dose effects in bulk FinFETs I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ... IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014 | 78 | 2014 |
| Separation of ionization and displacement damage using gate-controlled lateral PNP bipolar transistors DR Ball, RD Schrimpf, HJ Barnaby IEEE Transactions on Nuclear Science 49 (6), 3185-3190, 2002 | 72 | 2002 |
| A comparison of the SEU response of planar and FinFET D flip-flops at advanced technology nodes P Nsengiyumva, DR Ball, JS Kauppila, N Tam, M McCurdy, WT Holman, ... IEEE Transactions on nuclear science 63 (1), 266-272, 2016 | 71 | 2016 |
| Heavy-ion-induced current transients in bulk and SOI FinFETs F El-Mamouni, EX Zhang, DR Ball, B Sierawski, MP King, RD Schrimpf, ... IEEE Transactions on Nuclear Science 59 (6), 2674-2681, 2012 | 59 | 2012 |
| The effect of metallization layers on single event susceptibility AS Kobayashi, DR Ball, KM Warren, RA Reed, N Haddad, ... IEEE transactions on nuclear science 52 (6), 2189-2193, 2005 | 58 | 2005 |
| On-chip measurement of single-event transients in a 45 nm silicon-on-insulator technology TD Loveless, JS Kauppila, S Jagannathan, DR Ball, JD Rowe, ... IEEE Transactions on Nuclear Science 59 (6), 2748-2755, 2012 | 57 | 2012 |
| Radiation hardness of FDSOI and FinFET technologies ML Alles, RD Schrimpf, RA Reed, LW Massengill, RA Weller, ... IEEE 2011 International SOI Conference, 1-2, 2011 | 55 | 2011 |
| Analysis of bulk FinFET structural effects on single-event cross sections P Nsengiyumva, LW Massengill, ML Alles, BL Bhuva, DR Ball, ... IEEE Transactions on Nuclear Science 64 (1), 441-448, 2016 | 54 | 2016 |
| Estimating terrestrial neutron-induced SEB cross sections and FIT rates for high-voltage SiC power MOSFETs DR Ball, BD Sierawski, KF Galloway, RA Johnson, ML Alles, AL Sternberg, ... IEEE Transactions on Nuclear Science 66 (1), 337-343, 2018 | 44 | 2018 |
| Multi-cell soft errors at advanced technology nodes BL Bhuva, N Tam, LW Massengill, D Ball, I Chatterjee, M McCurdy, ... IEEE Transactions on Nuclear Science 62 (6), 2585-2591, 2015 | 42 | 2015 |
| Comparing single event upset sensitivity of bulk vs. SOI based FinFET SRAM cells using TCAD simulations DR Ball, ML Alles, RD Schrimpf, S Cristoloveanu 2010 IEEE International SOI Conference (SOI), 1-2, 2010 | 40 | 2010 |
| Failure estimates for SiC power MOSFETs in space electronics KF Galloway, AF Witulski, RD Schrimpf, AL Sternberg, DR Ball, ... Aerospace 5 (3), 67, 2018 | 37 | 2018 |
