Michael Waltl
Michael Waltl
Associate Professor, TU Wien
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The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ...
2D Materials 3 (3), 035004, 2016
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
Long-term stability and reliability of black phosphorus field-effect transistors
YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ...
ACS nano 10 (10), 9543-9549, 2016
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors
YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ...
Nature Electronics 2 (6), 230-235, 2019
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
A unified perspective of RTN and BTI
T Grasser, K Rott, H Reisinger, M Waltl, J Franco, B Kaczer
2014 IEEE International Reliability Physics Symposium, 4A. 5.1-4A. 5.7, 2014
On the microscopic structure of hole traps in pMOSFETs
T Grasser, W Goes, Y Wimmer, F Schanovsky, G Rzepa, M Waltl, K Rott, ...
2014 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2014
Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation
YY Illarionov, KKH Smithe, M Waltl, T Knobloch, E Pop, T Grasser
IEEE Electron Device Letters 38 (12), 1763-1766, 2017
NBTI in nanoscale MOSFETs—The ultimate modeling benchmark
T Grasser, K Rott, H Reisinger, M Waltl, F Schanovsky, B Kaczer
IEEE Transactions on Electron Devices 61 (11), 3586-3593, 2014
Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy
T Grasser, K Rott, H Reisinger, PJ Wagner, W Gös, F Schanovsky, M Waltl, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 2D. 2.1-2D. 2.7, 2013
Highly-stable black phosphorus field-effect transistors with low density of oxide traps
YY Illarionov, M Waltl, G Rzepa, T Knobloch, JS Kim, D Akinwande, ...
npj 2D Materials and Applications 1 (1), 23, 2017
Gate-sided hydrogen release as the origin of" permanent" NBTI degradation: From single defects to lifetimes
T Grasser, M Waltl, Y Wimmer, W Goes, R Kosik, G Rzepa, H Reisinger, ...
2015 IEEE International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2015
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors
B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ...
ACS nano 12 (6), 5368-5375, 2018
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
B Kaczer, J Franco, P Weckx, PJ Roussel, V Putcha, E Bury, M Simicic, ...
Microelectronics Reliability 81, 186-194, 2018
A Physical Model for the Hysteresis in MoS2 Transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ...
IEEE Journal of the Electron Devices Society 6, 972-978, 2018
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
T Grasser, K Rott, H Reisinger, M Waltl, P Wagner, F Schanovsky, W Goes, ...
2013 IEEE International Electron Devices Meeting, 15.5. 1-15.5. 4, 2013
Energetic mapping of oxide traps in MoS2 field-effect transistors
YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ...
2D Materials 4 (2), 025108, 2017
On the volatility of oxide defects: Activation, deactivation, and transformation
T Grasser, M Waltl, W Goes, Y Wimmer, AM El-Sayed, AL Shluger, ...
2015 IEEE International Reliability Physics Symposium, 5A. 3.1-5A. 3.8, 2015
Complete extraction of defect bands responsible for instabilities in n and pFinFETs
G Rzepa, M Waltl, W Goes, B Kaczer, J Franco, T Chiarella, N Horiguchi, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
Reliability of scalable MoS2 FETs with 2 nm crystalline CaF2 insulators
YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ...
2D Materials 6 (4), 045004, 2019
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