Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ... Nature materials 15 (11), 1166-1171, 2016 | 595 | 2016 |
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ... Nature communications 6 (1), 7311, 2015 | 426 | 2015 |
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ... ACS nano 9 (2), 2080-2087, 2015 | 396 | 2015 |
Silicon nanowire array photoelectrochemical cells AP Goodey, SM Eichfeld, KK Lew, JM Redwing, TE Mallouk Journal of the American Chemical Society 129 (41), 12344-12345, 2007 | 274 | 2007 |
Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ... Acs Nano 10 (3), 3580-3588, 2016 | 210 | 2016 |
Realizing large-scale, electronic-grade two-dimensional semiconductors YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ... ACS nano 12 (2), 965-975, 2018 | 183 | 2018 |
Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides A Azizi, S Eichfeld, G Geschwind, K Zhang, B Jiang, D Mukherjee, ... ACS nano 9 (5), 4882-4890, 2015 | 177 | 2015 |
Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers JH Park, S Vishwanath, X Liu, H Zhou, SM Eichfeld, SK Fullerton-Shirey, ... ACS nano 10 (4), 4258-4267, 2016 | 88 | 2016 |
ACS nano H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tomanek, PD Ye | 80 | 2014 |
First principles kinetic Monte Carlo study on the growth patterns of WSe2 monolayer Y Nie, C Liang, K Zhang, R Zhao, SM Eichfeld, PR Cha, L Colombo, ... 2D Materials 3 (2), 025029, 2016 | 75 | 2016 |
Orientation dependence of nickel silicide formation in contacts to silicon nanowires NS Dellas, BZ Liu, SM Eichfeld, CM Eichfeld, TS Mayer, SE Mohney Journal of applied physics 105 (9), 094309, 2009 | 65 | 2009 |
Rapid, non-destructive evaluation of ultrathin WSe2 using spectroscopic ellipsometry SM Eichfeld, CM Eichfeld, YC Lin, L Hossain, JA Robinson APL Materials 2 (9), 092508, 2014 | 63 | 2014 |
One dimensional metallic edges in atomically thin WSe2 induced by air exposure R Addou, CM Smyth, JY Noh, YC Lin, Y Pan, SM Eichfeld, S Fölsch, ... 2D Materials 5 (2), 025017, 2018 | 53 | 2018 |
Resistivity measurements of intentionally and unintentionally template-grown doped silicon nanowire arrays SM Eichfeld, TT Ho, CM Eichfeld, A Cranmer, SE Mohney, TS Mayer, ... Nanotechnology 18 (31), 315201, 2007 | 50 | 2007 |
Controlling nucleation of monolayer WSe2 during metal-organic chemical vapor deposition growth SM Eichfeld, VO Colon, Y Nie, K Cho, JA Robinson 2D Materials 3 (2), 025015, 2016 | 49 | 2016 |
Nickel and nickel silicide Schottky barrier contacts to -type silicon nanowires SM Woodruff, NS Dellas, BZ Liu, SM Eichfeld, TS Mayer, JM Redwing, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 46 | 2008 |
Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films X Zhang, ZY Al Balushi, F Zhang, TH Choudhury, SM Eichfeld, N Alem, ... Journal of Electronic Materials 45, 6273-6279, 2016 | 45 | 2016 |
Oxidation of silicon nanowires for top-gated field effect transistors B Liu, Y Wang, T Ho, KK Lew, SM Eichfeld, JM Redwing, TS Mayer, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 26 (3 …, 2008 | 45 | 2008 |
Large-area synthesis of WSe2 from WO3 by selenium–oxygen ion exchange P Browning, S Eichfeld, K Zhang, L Hossain, YC Lin, K Wang, N Lu, ... 2D Materials 2 (1), 014003, 2015 | 41 | 2015 |
Selective-area growth and controlled substrate coupling of transition metal dichalcogenides BM Bersch, SM Eichfeld, YC Lin, K Zhang, GR Bhimanapati, AF Piasecki, ... 2D Materials 4 (2), 025083, 2017 | 39 | 2017 |