| Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μA/μm at V DS= 0.5 V G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ... Electron Devices Meeting (IEDM), 2012 IEEE International, 32.6. 1-32.6. 4, 2012 | 194 | 2012 |
| AlGaSb/InAs tunnel field-effect transistor with on-current of 78 at 0.5 V R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ... IEEE electron device letters 33 (3), 363-365, 2012 | 163 | 2012 |
| Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ... IEEE Electron Device Letters 33 (5), 655-657, 2012 | 135 | 2012 |
| InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and Ratio Near G Zhou, Y Lu, R Li, Q Zhang, Q Liu, T Vasen, H Zhu, JM Kuo, T Kosel, ... IEEE Electron Device Letters 33 (6), 782-784, 2012 | 105 | 2012 |
| Polarization-engineered III-nitride heterojunction tunnel field-effect transistors W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 100 | 2015 |
| Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ... IEEE Electron Device Letters 32 (11), 1516-1518, 2011 | 72 | 2011 |
| InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field R Li, Y Lu, SD Chae, G Zhou, Q Liu, C Chen, M Shahriar Rahman, ... physica status solidi (c) 9 (2), 389-392, 2012 | 50 | 2012 |
| Geometry dependent tunnel FET performance-dilemma of electrostatics vs. quantum confinement Y Lu, A Seabaugh, P Fay, SJ Koester, SE Laux, W Haensch, SO Koswatta Device Research Conference (DRC), 2010, 17-18, 2010 | 42 | 2010 |
| Optimum bandgap and supply voltage in tunnel FETs Q Zhang, Y Lu, CA Richter, D Jena, A Seabaugh IEEE Transactions on Electron Devices 61 (8), 2719-2724, 2014 | 29 | 2014 |
| Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons Q Zhang, Y Lu, HG Xing, SJ Koester, SO Koswatta IEEE Electron Device Letters 31 (6), 531-533, 2010 | 28 | 2010 |
| Universal charge-conserving TFET SPICE model incorporating gate current and noise H Lu, W Li, Y Lu, P Fay, T Ytterdal, A Seabaugh IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 0 | 28 | |
| Perspectives of TFETs for low power analog ICs B Senale-Rodríguez, Y Lu, P Fay, D Jena, A Seabaugh, HG Xing, ... Subthreshold Microelectronics Conference (SubVT), 2012 IEEE, 1-3, 2012 | 24 | 2012 |
| Self-aligned InAs/Al 0.45 Ga 0.55 Sb vertical tunnel FETs G Zhou, Y Lu, R Li, Q Zhang, W Hwang, Q Liu, T Vasen, H Zhu, J Kuo, ... 69th Device Research Conference, 2011 | 21 | 2011 |
| Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction Z Jiang, Y Lu, Y Tan, Y He, M Povolotskyi, T Kubis, AC Seabaugh, P Fay, ... IEEE Transactions on Electron Devices 62 (8), 2445-2449, 2015 | 16 | 2015 |
| An accurate interband tunneling model for InAs/GaSb heterostructure devices M Shams, I Bin, Y Xie, Y Lu, P Fay physica status solidi (c) 10 (5), 740-743, 2013 | 7 | 2013 |
| Self-Aligned In0. 53Ga0. 47As/InAs/InP Vertical Tunnel FETs G Zhou, Y Lu, R Li, W Hwang, Q Zhang, Q Liu, T Vasen, C Chen, H Zhu, ... Proc. Int. Conf. Compound Semicond. Manuf. Technol, 339, 2011 | 5 | 2011 |
| Graphene nanoribbon Schottky-barrier FETs for end-of-the-roadmap CMOS: Challenges and opportunities Q Zhang, Y Lu, GH Xing, CA Richter, SJ Koester, SO Koswatta Device Research Conference (DRC), 2010, 75-76, 2010 | 5 | 2010 |
| (Invited) III-V Tunnel Field-Effect Transistors A Seabaugh, SD Chae, P Fay, WS Hwang, T Kosel, R Li, Q Liu, Y Lu, ... ECS Transactions 41 (7), 227-229, 2011 | 3 | 2011 |
| III-V Tunnel Field-Effect Transistors A Seabaugh, SD Chae, P Fay, WS Hwang, T Kosel, R Li, Q Liu, Y Lu, ... Meeting Abstracts, 2130-2130, 2011 | 3 | 2011 |
| Fabrication approach for lateral InGaAs tunnel transistors D Wheeler, S Kabeer, Y Lu, T Vasen, Q Zhang, G Zhou, K Clark, H Zhu, ... 2009 International Semiconductor Device Research Symposium, 2009 | 1 | 2009 |
