raphael CLERC
raphael CLERC
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Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects
S Eminente, S Cristoloveanu, R Clerc, A Ohata, G Ghibaudo
Solid-State Electronics 51 (2), 239-244, 2007
Semi-analytical modeling of short-channel effects in Si and Ge symmetrical double-gate MOSFETs
A Tsormpatzoglou, CA Dimitriadis, R Clerc, Q Rafhay, G Pananakakis, ...
IEEE Transactions on Electron devices 54 (8), 1943-1952, 2007
Threshold voltage model for short-channel undoped symmetrical double-gate MOSFETs
A Tsormpatzoglou, CA Dimitriadis, R Clerc, G Pananakakis, G Ghibaudo
IEEE Transactions on Electron Devices 55 (9), 2512-2516, 2008
Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors
YM Meziani, J Łusakowski, W Knap, N Dyakonova, F Teppe, K Romanjek, ...
journal of applied physics 96 (10), 5761-5765, 2004
Theory of direct tunneling current in metal–oxide–semiconductor structures
R Clerc, A Spinelli, G Ghibaudo, G Pananakakis
Journal of applied physics 91 (3), 1400-1409, 2002
Semianalytical modeling of short-channel effects in lightly doped silicon trigate MOSFETs
A Tsormpatzoglou, CA Dimitriadis, R Clerc, G Pananakakis, G Ghibaudo
IEEE transactions on electron devices 55 (10), 2623-2631, 2008
A compact drain current model of short-channel cylindrical gate-all-around MOSFETs
A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ...
Semiconductor science and technology 24 (7), 075017, 2009
Characterization of effective mobility by split C (V) technique in N-MOSFETs with ultra-thin gate oxides
F Lime, C Guiducci, R Clerc, G Ghibaudo, C Leroux, T Ernst
Solid-State Electronics 47 (7), 1147-1153, 2003
Analytical modeling of organic solar cells and photodiodes
S Altazin, R Clerc, R Gwoziecki, G Pananakakis, G Ghibaudo, ...
Applied Physics Letters 99 (14), 2011
Evaluation of indoor photovoltaic power production under directional and diffuse lighting conditions
CA Reynaud, R Clerc, PB Lechęne, M Hébert, A Cazier, AC Arias
Solar Energy Materials and Solar Cells 200, 110010, 2019
On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices
R Clerc, P Palestri, L Selmi
IEEE Transactions on Electron Devices 53 (7), 1634-1640, 2006
Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices
P Mur, MN Semeria, M Olivier, AM Papon, C Leroux, G Reimbold, ...
Applied surface science 175, 726-733, 2001
A physical compact model for direct tunneling from NMOS inversion layers
R Clerc, P O'sullivan, KG McCarthy, G Ghibaudo, G Pananakakis, ...
Solid-State Electronics 45 (10), 1705-1716, 2001
Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs
Q Rafhay, R Clerc, G Ghibaudo, G Pananakakis
Solid-State Electronics 52 (10), 1474-1481, 2008
Impact of blend morphology on interface state recombination in bulk heterojunction organic solar cells
B Bouthinon, R Clerc, J Vaillant, JM Verilhac, J Faure‐Vincent, D Djurado, ...
Advanced Functional Materials 25 (7), 1090-1101, 2015
Evidence of band bending induced by hole trapping at MAPbI 3 perovskite/metal interface
YF Chen, YT Tsai, DM Bassani, R Clerc, D Forgács, HJ Bolink, M Wussler, ...
Journal of materials chemistry A 4 (44), 17529-17536, 2016
Electrical characterization and modeling of MOS structures with an ultra-thin oxide
R Clerc, B De Salvo, G Ghibaudo, G Reimbold, G Pananakakis
Solid-State Electronics 46 (3), 407-416, 2002
Time-dependent many-particle simulation for resonant tunneling diodes: interpretation of an analytical small-signal equivalent circuit
FL Traversa, E Buccafurri, A Alarcon, G Albareda, R Clerc, F Calmon, ...
IEEE transactions on electron devices 58 (7), 2104-2112, 2011
Analysis of edge losses on silicon heterojunction half solar cells
F Gérenton, J Eymard, S Harrison, R Clerc, D Munoz
Solar Energy Materials and Solar Cells 204, 110213, 2020
Multi-subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs
P Palestri, R Clerc, D Esseni, L Lucci, L Selmi
2006 International Electron Devices Meeting, 1-4, 2006
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