| Highly stretchable resistive pressure sensors using a conductive elastomeric composite on a micropyramid array CL Choong, MB Shim, BS Lee, S Jeon, DS Ko, TH Kang, J Bae, SH Lee, ... Advanced materials 26 (21), 3451-3458, 2014 | 1274 | 2014 |
| Highly stretchable electric circuits from a composite material of silver nanoparticles and elastomeric fibres M Park, J Im, M Shin, Y Min, J Park, H Cho, S Park, MB Shim, S Jeon, ... Nature nanotechnology 7 (12), 803-809, 2012 | 978 | 2012 |
| High performance amorphous oxide thin film transistors with self-aligned top-gate structure JC Park, SW Kim, SI Kim, H Yin, JH Hur, SH Jeon, SH Park, IH Song, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 623 | 2009 |
| Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays S Jeon, SE Ahn, I Song, CJ Kim, UI Chung, E Lee, I Yoo, A Nathan, S Lee, ... Nature materials 11 (4), 301-305, 2012 | 506 | 2012 |
| A flexible bimodal sensor array for simultaneous sensing of pressure and temperature NT Tien, S Jeon, DI Kim, TQ Trung, M Jang, BU Hwang, KE Byun, J Bae, ... Advanced Materials 26 (5), 796-804, 2014 | 446 | 2014 |
| Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors S Lee, K Ghaffarzadeh, A Nathan, J Robertson, S Jeon, C Kim, IH Song, ... Applied Physics Letters 98 (20), 2011 | 323 | 2011 |
| HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang IEEE Electron Device Letters 38 (6), 732-735, 2017 | 265 | 2017 |
| Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides and S Jeon, H Hwang Journal of Applied Physics 93 (10), 6393-6395, 2003 | 195 | 2003 |
| Hot carrier trapping induced negative photoconductance in InAs nanowires toward novel nonvolatile memory Y Yang, X Peng, HS Kim, T Kim, S Jeon, HK Kang, W Choi, J Song, ... Nano letters 15 (9), 5875-5882, 2015 | 183 | 2015 |
| Metal oxide thin film phototransistor for remote touch interactive displays SE Ahn, I Song, S Jeon, YW Jeon, Y Kim, C Kim, B Ryu, JH Lee, A Nathan, ... Advanced materials 24 (19), 2631-2636, 2012 | 176 | 2012 |
| The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2 Y Goh, S Jeon Nanotechnology 29 (33), 335201, 2018 | 174 | 2018 |
| Amorphous oxide semiconductor TFTs for displays and imaging A Nathan, S Lee, S Jeon, J Robertson Journal of Display Technology 10 (11), 917-927, 2014 | 170 | 2014 |
| Persistent photoconductivity in Hf–In–Zn–O thin film transistors K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, ... Applied Physics Letters 97 (14), 2010 | 166 | 2010 |
| Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode Y Goh, SH Cho, SHK Park, S Jeon Nanoscale 12 (16), 9024-9031, 2020 | 143 | 2020 |
| Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, ... Applied Physics Letters 97 (11), 2010 | 138 | 2010 |
| The influence of top and bottom metal electrodes on ferroelectricity of hafnia Y Lee, Y Goh, J Hwang, D Das, S Jeon IEEE Transactions on Electron Devices 68 (2), 523-528, 2021 | 126 | 2021 |
| Non-volatile semiconductor memory device with alternative metal gate material SH Jeon, J Han, C Kim US Patent 7,391,075, 2008 | 121 | 2008 |
| Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2 S Jeon, CJ Choi, TY Seong, H Hwang Applied physics letters 79 (2), 245-247, 2001 | 119 | 2001 |
| Low-voltage, high-sensitivity and high-reliability bimodal sensor array with fully inkjet-printed flexible conducting electrode for low power consumption electronic skin K Kim, M Jung, B Kim, J Kim, K Shin, OS Kwon, S Jeon Nano Energy 41, 301-307, 2017 | 118 | 2017 |
| Ultra-thin Hf0. 5Zr0. 5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization Y Goh, J Hwang, Y Lee, M Kim, S Jeon Applied Physics Letters 117 (24), 2020 | 117 | 2020 |
Hyunsang HwangPOSTECH, KoreaVerified email at postech.ac.kr
