| Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors ML Lee, EA Fitzgerald, MT Bulsara, MT Currie, A Lochtefeld Journal of applied physics 97 (1), 2005 | 1258 | 2005 |
| Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ... Applied physics letters 59 (7), 811-813, 1991 | 925 | 1991 |
| Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing MT Currie, SB Samavedam, TA Langdo, CW Leitz, EA Fitzgerald Applied physics letters 72 (14), 1718-1720, 1998 | 750 | 1998 |
| Dislocations in strained-layer epitaxy: theory, experiment, and applications EA Fitzgerald Materials science reports 7 (3), 87-142, 1991 | 723 | 1991 |
| Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 685 | 1992 |
| Coherent phonon heat conduction in superlattices MN Luckyanova, J Garg, K Esfarjani, A Jandl, MT Bulsara, AJ Schmidt, ... Science 338 (6109), 936-939, 2012 | 613 | 2012 |
| Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon J Michel, JL Benton, RF Ferrante, DC Jacobson, DJ Eaglesham, ... Journal of applied physics 70 (5), 2672-2678, 1991 | 581 | 1991 |
| Strained-semiconductor-on-insulator device structures TA Langdo, MT Currie, R Hammond, AJ Lochtefeld, EA Fitzgerald US Patent 6,995,430, 2006 | 489 | 2006 |
| Remote epitaxy through graphene enables two-dimensional material-based layer transfer Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ... Nature 544 (7650), 340-343, 2017 | 483 | 2017 |
| Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same M Currie, A Lochtefeld, R Hammond, E Fitzgerald US Patent 6,831,292, 2004 | 480 | 2004 |
| Methods of forming strained-semiconductor-on-insulator finFET device structures AJ Lochtefeld, TA Langdo, R Hammond, MT Currie, G Braithwaite, ... US Patent 7,074,623, 2006 | 427* | 2006 |
| Luminescence and structural study of porous silicon films YH Xie, WL Wilson, FM Ross, JA Mucha, EA Fitzgerald, JM Macaulay, ... Journal of applied physics 71 (5), 2403-2407, 1992 | 419 | 1992 |
| Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area EA Fitzgerald, GP Watson, RE Proano, DG Ast, PD Kirchner, GD Pettit, ... Journal of Applied Physics 65 (6), 2220-2237, 1989 | 390 | 1989 |
| Strained silicon MOSFET technology JL Hoyt, HM Nayfeh, S Eguchi, I Aberg, G Xia, T Drake, EA Fitzgerald, ... Digest. International Electron Devices Meeting,, 23-26, 2002 | 370 | 2002 |
| Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers ME Groenert, CW Leitz, AJ Pitera, V Yang, H Lee, RJ Ram, EA Fitzgerald Journal of applied physics 93 (1), 362-367, 2003 | 354 | 2003 |
| Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman Applied Physics Letters 59 (13), 1611-1613, 1991 | 353 | 1991 |
| Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain YH Xie, GH Gilmer, C Roland, PJ Silverman, SK Buratto, JY Cheng, ... Physical Review Letters 73 (22), 3006, 1994 | 340 | 1994 |
| Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates MT Currie, CW Leitz, TA Langdo, G Taraschi, EA Fitzgerald, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 326 | 2001 |
| High quality Ge on Si by epitaxial necking TA Langdo, CW Leitz, MT Currie, EA Fitzgerald, A Lochtefeld, ... Applied Physics Letters 76 (25), 3700-3702, 2000 | 310 | 2000 |
| Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on virtual substrates ML Lee, CW Leitz, Z Cheng, AJ Pitera, T Langdo, MT Currie, G Taraschi, ... Applied Physics Letters 79 (20), 3344-3346, 2001 | 300 | 2001 |
Minjoo Larry LeeProfessor of electrical and computer engineering, University of Illinois Urbana-ChampaignVerified email at illinois.edu
