| Device scaling limits of Si MOSFETs and their application dependencies DJ Frank, RH Dennard, E Nowak, PM Solomon, Y Taur, HSP Wong Proceedings of the IEEE 89 (3), 259-288, 2001 | 2030 | 2001 |
| An integrated logic circuit assembled on a single carbon nanotube Z Chen, J Appenzeller, YM Lin, J Sippel-Oakley, AG Rinzler, J Tang, ... Science 311 (5768), 1735-1735, 2006 | 727 | 2006 |
| Nanoscale cmos HSP Wong, DJ Frank, PM Solomon, CHJ Wann, JJ Welser Proceedings of the IEEE 87 (4), 537-570, 1999 | 699 | 1999 |
| Six-band calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness MV Fischetti, Z Ren, PM Solomon, M Yang, K Rim Journal of Applied Physics 94 (2), 1079-1095, 2003 | 624 | 2003 |
| Silicon CMOS devices beyond scaling W Haensch, EJ Nowak, RH Dennard, PM Solomon, A Bryant, ... IBM Journal of Research and Development 50 (4.5), 339-361, 2006 | 609 | 2006 |
| Coupled electron-hole transport U Sivan, PM Solomon, H Shtrikman Physical review letters 68 (8), 1196, 1992 | 463 | 1992 |
| Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation HSP Wong, DJ Frank, PM Solomon International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 430 | 1998 |
| Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements J Bruley, JO Chu, KL Lee, AS Ozcan, PM Solomon, JB Yau US Patent 10,269,714, 2019 | 331 | 2019 |
| Method for making bonded metal back-plane substrates KK Chan, CP D'emic, EC Jones, PM Solomon, S Tiwari US Patent 6,057,212, 2000 | 322 | 2000 |
| It’s time to reinvent the transistor! TN Theis, PM Solomon Science 327 (5973), 1600-1601, 2010 | 306 | 2010 |
| Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ... IEEE Electron Device Letters 31 (7), 731-733, 2010 | 293 | 2010 |
| In quest of the “next switch”: prospects for greatly reduced power dissipation in a successor to the silicon field-effect transistor TN Theis, PM Solomon Proceedings of the IEEE 98 (12), 2005-2014, 2010 | 270 | 2010 |
| A comparison of semiconductor devices for high-speed logic PM Solomon Proceedings of the IEEE 70 (5), 489-509, 1982 | 270 | 1982 |
| Ultra thin body fully-depleted SOI MOSFETs BB Doris, M Ieong, Z Ren, PM Solomon, M Yang US Patent 7,459,752, 2008 | 265 | 2008 |
| Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model MK Ieong, PM Solomon, SE Laux, HSP Wong, D Chidambarrao International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 244 | 1998 |
| New phenomena in coupled transport between 2D and 3D electron-gas layers PM Solomon, PJ Price, DJ Frank, DC La Tulipe Physical review letters 63 (22), 2508, 1989 | 235 | 1989 |
| Negative charge, barrier heights, and the conduction‐band discontinuity in AlxGa1−xAs capacitors TW Hickmott, PM Solomon, R Fischer, H Morkoç Journal of Applied Physics 57 (8), 2844-2853, 1985 | 211 | 1985 |
| Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers PM Solomon, H Morkoc IEEE Transactions on Electron Devices 31 (8), 1015-1027, 1984 | 197 | 1984 |
| Bipolar transistor design for optimized power-delay logic circuits DD Tang, PM Solomon IEEE Journal of Solid-State Circuits 14 (4), 679-684, 1979 | 183 | 1979 |
| Breakdown in silicon oxide− A review P Solomon Journal of Vacuum Science and Technology 14 (5), 1122-1130, 1977 | 177 | 1977 |
