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Cheng-Wei Cheng(鄭政瑋)
Cheng-Wei Cheng(鄭政瑋)
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Title
Cited by
Cited by
Year
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ...
Nature communications 5 (1), 4836, 2014
4032014
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics
CW Cheng, KT Shiu, N Li, SJ Han, L Shi, DK Sadana
Nature communications 4 (1), 1577, 2013
3272013
Growth of highly tensile-strained Ge on relaxed InxGa1− xAs by metal-organic chemical vapor deposition
Y Bai, KE Lee, C Cheng, ML Lee, EA Fitzgerald
Journal of Applied Physics 104 (8), 2008
1542008
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel, M Sousa, H Siegwart, ...
APL materials 2 (8), 2014
902014
The effect of interface processing on the distribution of interfacial defect states and the CV characteristics of III-V metal-oxide-semiconductor field effect transistors
CW Cheng, G Apostolopoulos, EA Fitzgerald
Journal of Applied Physics 109 (2), 2011
702011
III-V finFETs on silicon substrate
A Basu, CW Cheng, A Majumdar, RM Martin, U Rana, DK Sadana, ...
US Patent 8,937,299, 2015
602015
Memory characteristics of Pt nanocrystals self-assembledfrom reduction of an embedded PtOx ultrathin film in metal-oxide-semiconductor structures
JY Tseng, CW Cheng, SY Wang, TB Wu, KY Hsieh, R Liu
Applied physics letters 85 (13), 2595-2597, 2004
592004
In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors
CW Cheng, EA Fitzgerald
Applied Physics Letters 93 (3), 2008
582008
Cubic phase gan on nano‐grooved Si (100) via maskless selective area epitaxy
C Bayram, JA Ott, KT Shiu, CW Cheng, Y Zhu, J Kim, M Razeghi, ...
Advanced Functional Materials 24 (28), 4492-4496, 2014
532014
Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts
A Basu, CW Cheng, WE Haensch, A Majumdar, KT Shiu
US Patent 9,287,362, 2016
502016
Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory
HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ...
2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018
492018
Iii-v finfets on silicon substrate
A Basu, CW Cheng, A Majumdar, RM Martin, U Rana, DK Sadana, ...
US Patent App. 13/800,398, 2014
372014
Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs
CW Cheng, J Hennessy, D Antoniadis, EA Fitzgerald
Applied Physics Letters 95 (8), 2009
362009
Projected mushroom type phase‐change memory
S Ghazi Sarwat, TM Philip, CT Chen, B Kersting, RL Bruce, CW Cheng, ...
Advanced Functional Materials 31 (49), 2106547, 2021
272021
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 µS/µm at VDD = 0.5 V
Y Sun, A Majumdar, CW Cheng, RM Martin, RL Bruce, JB Yau, DB Farmer, ...
2014 IEEE International Electron Devices Meeting, 25.3. 1-25.3. 4, 2014
242014
Comprehensive scaling study on 3D cross-point PCM toward 1Znm node for SCM applications
WC Chien, HY Ho, CW Yeh, CH Yang, HY Cheng, W Kim, IT Kuo, ...
2019 Symposium on VLSI Technology, T60-T61, 2019
232019
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
X Sun, C D'Emic, CW Cheng, A Majumdar, Y Sun, E Cartier, RL Bruce, ...
2017 Symposium on VLSI Technology, T40-T41, 2017
222017
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
Y Sun, A Majumdar, CW Cheng, YH Kim, U Rana, RM Martin, RL Bruce, ...
2013 IEEE International Electron Devices Meeting, 2.7. 1-2.7. 4, 2013
212013
Mushroom-type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation
RL Bruce, SG Sarwat, I Boybat, CW Cheng, W Kim, SR Nandakumar, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021
182021
High performance InGaAs gate-all-around nanosheet FET on Si using template assisted selective epitaxy
S Lee, CW Cheng, X Sun, C D'Emic, H Miyazoe, MM Frank, M Lofaro, ...
2018 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2018
182018
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