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Mohammad Iktiham Bin Taher
Mohammad Iktiham Bin Taher
Research Engineer in Micro-Nano Electronics (Executive Status)
Verified email at institutlafayette.eu - Homepage
Title
Cited by
Cited by
Year
V2O5 gas sensors: A review
R Alrammouz, M Lazerges, J Pironon, IB Taher, A Randi, Y Halfaya, ...
Sensors and Actuators A: Physical 332, 113179, 2021
302021
GaN-based double gate MOSFETs: effect of gate length
S Ahmed, MIB Taher, MT Hasan, MS Islam
2016 IEEE Region 10 Conference (TENCON), 2334-2337, 2016
52016
High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer
MIB Taher, Y Halfaya, R Alrammouz, M Lazerges, A Randi, T Moudakir, ...
2021 IEEE Sensors, 1-4, 2021
22021
High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere
MIB Taher, M Kumar, Y Halfaya, M Lazerges, NY Sama, K Bouzid, ...
International Journal of Hydrogen Energy 55, 1514-1522, 2024
2024
New HEMT Type Sensors for In-situ Bio‐Geochemical Analysis
MIB Taher
Université de Lorraine, 2022
2022
A Pragmatic Approach for Managing Maximum Power Demand with Generator Control Mechanism Using PIC Microcontroller
FFT Md. Humayun Kabir, Md. Iktiham Bin Taher*, Shams Ul Islam
Journal of Power Electronics & Power Systems 8 (2), 11-18, 2018
2018
Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs
MIB Taher, MT Hasan
AIUB Journal of Science and Engineering (AJSE) 16 (1), 69-74, 2017
2017
GaN-based Sub-10 nm Metal-Oxide-Semiconductor Field-Effect Transistors
MIB Taher, S Ahmed
2016
Effects of High-κ on Device Performance of Nano-Regime GaN-based MOSFETs
MIB Taher, MT Hasan
2016
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