Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys B Hekmatshoar-Tabari, M Hopstaken, DG Park, DK Sadana, GG Shahidi, ... US Patent 8,778,448, 2014 | 441 | 2014 |
Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys B Hekmatshoar-Tabari, M Hopstaken, DG Park, DK Sadana, GG Shahidi, ... US Patent 9,099,585, 2015 | 439 | 2015 |
METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES AJ Kellock, H Kim, DG Park, SV Nitta, S Purushothaman, S Rossnagel, ... US Patent App. 12/203,338, 2010 | 436 | 2010 |
Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ... IEEE Electron Device Letters 31 (7), 731-733, 2010 | 300 | 2010 |
High-/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ... IEEE Electron Device Letters 31 (4), 275-277, 2010 | 253 | 2010 |
Method of forming a metal gate in a semiconductor device using atomic layer deposition process 2007 DG Park, HJ Cho, KY Lim - US Patent 7,157,359 US Patent 20,020,086,507, 0 | 192* | |
Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition H Kim, C Detavenier, O Van der Straten, SM Rossnagel, AJ Kellock, ... Journal of applied physics 98 (1), 2005 | 161 | 2005 |
Characteristics of n {sup+} polycrystalline-Si/Al {sub 2} O {sub 3}/Si metal {endash} oxide {endash} semiconductor structures prepared by atomic layer chemical vapor deposition … DG Park, HJ Cho, KY Lim, C Lim, IS Yeo, JS Roh, JW Park Journal of Applied Physics 89 (11), 2001 | 139 | 2001 |
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ... 2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011 | 126 | 2011 |
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing M Chudzik, B Doris, R Mo, J Sleight, E Cartier, C Dewan, D Park, H Bu, ... 2007 IEEE symposium on VLSI technology, 194-195, 2007 | 121 | 2007 |
Method of manufacturing semiconductor devices with titanium aluminum nitride work function DG Park, TH Cha, SA Jang, HJ Cho, TK Kim, KY Lim, IS Yeo, JW Park US Patent 6,506,676, 2003 | 104 | 2003 |
Characteristics of n+ polycrystalline-Si/Al 2 O 3/Si metal–oxide–semiconductor structures prepared by atomic layer chemical vapor deposition using Al (CH 3) 3 and H 2 O vapor DG Park, HJ Cho, KY Lim, C Lim, IS Yeo, JS Roh, JW Park Journal of Applied Physics 89 (11), 6275-6280, 2001 | 103 | 2001 |
finFETS and methods of making same KK Chan, TS Kanarsky, J Li, CQ Ouyang, DG Park, Z Ren, X Wang, H Yin US Patent 8,043,920, 2011 | 98 | 2011 |
Electrical conduction in silicon nitrides deposited by plasma enhanced chemical vapour deposition M Tao, D Park, SN Mohammad, D Li, AE Botchkerav, H Morkoç Philosophical Magazine B 73 (4), 723-736, 1996 | 89 | 1996 |
FinFET with longitudinal stress in a channel KK Chan, QC Ouyang, DG Park, X Wang US Patent 7,872,303, 2011 | 83 | 2011 |
Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor‐based metal–insulator … DG Park, M Tao, D Li, AE Botchkarev, Z Fan, Z Wang, SN Mohammad, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 82 | 1996 |
Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs H Miki, N Tega, M Yamaoka, DJ Frank, A Bansal, M Kobayashi, K Cheng, ... 2012 International Electron Devices Meeting, 19.1. 1-19.1. 4, 2012 | 77 | 2012 |
High-temperature stable gate structure with metallic electrode DG Park, OG Gluschenkov, MA Gribelyuk, KH Wong US Patent 7,279,413, 2007 | 73 | 2007 |
Boron penetration in metal–oxide–semiconductor system DG Park, HJ Cho, IS Yeo, JS Roh, JM Hwang Applied Physics Letters 77 (14), 2207-2209, 2000 | 73 | 2000 |
The physical properties of cubic plasma-enhanced atomic layer deposition TaN films H Kim, C Lavoie, M Copel, V Narayanan, DG Park, SM Rossnagel Journal of applied physics 95 (10), 5848-5855, 2004 | 68 | 2004 |