Progress, challenges, and opportunities in two-dimensional materials beyond graphene SZ Butler, SM Hollen, L Cao, Y Cui, JA Gupta, HR Gutiérrez, TF Heinz, ... ACS nano 7 (4), 2898-2926, 2013 | 5211 | 2013 |
Oriented 2D covalent organic framework thin films on single-layer graphene JW Colson, AR Woll, A Mukherjee, MP Levendorf, EL Spitler, VB Shields, ... Science 332 (6026), 228-231, 2011 | 1160 | 2011 |
Measurement of ultrafast carrier dynamics in epitaxial graphene JM Dawlaty, S Shivaraman, M Chandrashekhar, F Rana, MG Spencer Applied Physics Letters 92 (4), 2008 | 950 | 2008 |
Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene PA George, J Strait, J Dawlaty, S Shivaraman, M Chandrashekhar, ... Nano letters 8 (12), 4248-4251, 2008 | 824 | 2008 |
Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible JM Dawlaty, S Shivaraman, J Strait, P George, M Chandrashekhar, ... Applied Physics Letters 93 (13), 2008 | 656 | 2008 |
Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices RD Vispute, V Talyansky, S Choopun, RP Sharma, T Venkatesan, M He, ... Applied Physics Letters 73 (3), 348-350, 1998 | 637 | 1998 |
Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor Y Makarov, M Spencer US Patent 8,329,252, 2012 | 476 | 2012 |
Ultrafast relaxation dynamics of hot optical phonons in graphene H Wang, JH Strait, PA George, S Shivaraman, VB Shields, ... Applied Physics Letters 96 (8), 2010 | 369 | 2010 |
Temperature dependence of wavelength selectable zero-phonon emission from single defects in hexagonal boron nitride NR Jungwirth, B Calderon, Y Ji, MG Spencer, ME Flatté, GD Fuchs Nano letters 16 (10), 6052-6057, 2016 | 346 | 2016 |
Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/passivation and UV illumination G Koley, V Tilak, LF Eastman, MG Spencer IEEE Transactions on Electron Devices 50 (4), 886-893, 2003 | 311 | 2003 |
Free-standing epitaxial graphene S Shivaraman, RA Barton, X Yu, J Alden, L Herman, ... Nano letters 9 (9), 3100-3105, 2009 | 289 | 2009 |
Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene F Rana, PA George, JH Strait, J Dawlaty, S Shivaraman, ... Physical Review B—Condensed Matter and Materials Physics 79 (11), 115447, 2009 | 284 | 2009 |
van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst J Hwang, M Kim, D Campbell, HA Alsalman, JY Kwak, S Shivaraman, ... Acs Nano 7 (1), 385-395, 2013 | 275 | 2013 |
Very slow cooling dynamics of photoexcited carriers in graphene observed by optical-pump terahertz-probe spectroscopy JH Strait, H Wang, S Shivaraman, V Shields, M Spencer, F Rana Nano letters 11 (11), 4902-4906, 2011 | 238 | 2011 |
Demonstration of a 4H SiC betavoltaic cell MVS Chandrashekhar, CI Thomas, H Li, MG Spencer, A Lal Applied Physics Letters 88 (3), 2006 | 231 | 2006 |
Electrical Characteristics of Multilayer MoS2 FET’s with MoS2/Graphene Heterojunction Contacts JY Kwak, J Hwang, B Calderon, H Alsalman, N Munoz, B Schutter, ... Nano letters 14 (8), 4511-4516, 2014 | 215 | 2014 |
Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy G Koley, MG Spencer Journal of Applied Physics 90 (1), 337-344, 2001 | 198 | 2001 |
Highly sensitive and selective detection of NO2 using epitaxial graphene on 6H-SiC MWK Nomani, R Shishir, M Qazi, D Diwan, VB Shields, MG Spencer, ... Sensors and Actuators B: Chemical 150 (1), 301-307, 2010 | 195 | 2010 |
Thickness estimation of epitaxial graphene on SiC using attenuation of substrate Raman intensity S Shivaraman, MVS Chandrashekhar, JJ Boeckl, MG Spencer Journal of electronic materials 38, 725-730, 2009 | 176 | 2009 |
On the origin of the two-dimensional electron gas at the AlGaN∕ GaN heterostructure interface G Koley, MG Spencer Applied Physics Letters 86 (4), 2005 | 172 | 2005 |