| Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ... IEEE Electron Device Letters 24 (2), 87-89, 2003 | 439 | 2003 |
| Method for tuning the effective work function of a gate structure in a semiconductor device T Kauerauf, A Spessot, C Caillat US Patent 9,076,726, 2015 | 315 | 2015 |
| Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization LÅ Ragnarsson, Z Li, J Tseng, T Schram, E Rohr, MJ Cho, T Kauerauf, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 304 | 2009 |
| Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/gate dielectrics A Kerber, E Cartier, L Pantisano, M Rosmeulen, R Degraeve, T Kauerauf, ... 2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003 | 191 | 2003 |
| A comprehensive reliability investigation of the voltage-, temperature-and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs D Marcon, T Kauerauf, F Medjdoub, J Das, M Van Hove, P Srivastava, ... 2010 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2010 | 112 | 2010 |
| Low Weibull slope of breakdown distributions in high-k layers T Kauerauf, R Degraeve, E Cartier, C Soens, G Groeseneken IEEE Electron Device Letters 23 (4), 215-217, 2002 | 109 | 2002 |
| Channel Hot Carrier Degradation Mechanism in Long/Short Channel -FinFETs M Cho, P Roussel, B Kaczer, R Degraeve, J Franco, M Aoulaiche, ... IEEE Transactions on Electron Devices 60 (12), 4002-4007, 2013 | 106 | 2013 |
| Insight into N/PBTI mechanisms in sub-1-nm-EOT devices M Cho, JD Lee, M Aoulaiche, B Kaczer, P Roussel, T Kauerauf, ... IEEE Transactions on Electron Devices 59 (8), 2042-2048, 2012 | 104 | 2012 |
| Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/gate stacks with TiN electrodes A Kerber, E Cartier, R Degraeve, PJ Roussel, L Pantisano, T Kauerauf, ... IEEE Transactions on Electron Devices 50 (5), 1261-1269, 2003 | 102 | 2003 |
| Effect of bulk trap density on HfO/sub 2/reliability and yield R Degraeve, A Kerber, P Roussell, E Cartier, T Kauerauf, L Pantisano, ... IEEE International Electron Devices Meeting 2003, 38.5. 1-38.5. 4, 2003 | 90 | 2003 |
| Degradation and breakdown of 0.9 nm EOT SiO/sub 2/ALD HfO/sub 2/metal gate stacks under positive constant voltage stress R Degraeve, T Kauerauf, M Cho, M Zahid, LA Ragnarsson, DP Brunco, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 87 | 2005 |
| Review of reliability issues in high-k/metal gate stacks R Degraeve, M Aoulaiche, B Kaczer, P Roussel, T Kauerauf, S Sahhaf, ... 2008 15th International Symposium on the Physical and Failure Analysis of …, 2008 | 81 | 2008 |
| Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3 J Franco, A Alian, B Kaczer, D Lin, T Ivanov, A Pourghaderi, K Martens, ... 2014 IEEE International Reliability Physics Symposium, 6A. 2.1-6A. 2.6, 2014 | 71 | 2014 |
| Scaling CMOS: Finding the gate stack with the lowest leakage current T Kauerauf, B Govoreanu, R Degraeve, G Groeseneken, H Maes Solid-state electronics 49 (5), 695-701, 2005 | 70 | 2005 |
| Towards understanding degradation and breakdown of SiO2/high-k stacks T Kauerauf, R Degraeve, E Cartier, B Govoreanu, P Blomme, B Kaczer, ... Digest. International Electron Devices Meeting,, 521-524, 2002 | 69 | 2002 |
| Gate-last vs. gate-first technology for aggressively scaled EOT logic/RF CMOS A Veloso, LÅ Ragnarsson, MJ Cho, K Devriendt, K Kellens, F Sebaai, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 34-35, 2011 | 68 | 2011 |
| Channel Hot-Carrier Degradation in Short-Channel Transistors With High- /Metal Gate Stacks E Amat, T Kauerauf, R Degraeve, A De Keersgieter, R Rodriguez, ... IEEE Transactions on Device and Materials reliability 9 (3), 425-430, 2009 | 56 | 2009 |
| Electrical characterisation of high-k materials prepared by atomic layer CVD RJ Carter, E Cartier, M Caymax, S De Gendt, R Degraevel, ... Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 …, 2001 | 55 | 2001 |
| Stress polarity dependence of degradation and breakdown of SiO/sub 2//high-k stacks R Degrave, T Kauerauf, A Kerber, E Cartier, B Govoreanu, P Roussel, ... 2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003 | 54 | 2003 |
| Competing degradation mechanisms in short-channel transistors under channel hot-carrier stress at elevated temperatures E Amat, T Kauerauf, R Degraeve, R Rodriguez, M Nafria, X Aymerich, ... IEEE Transactions on Device and Materials Reliability 9 (3), 454-458, 2009 | 51 | 2009 |
