Sayed Hasan
Cited by
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Assessment of high-frequency performance potential of carbon nanotube transistors
J Guo, S Hasan, A Javey, G Bosman, M Lundstrom
IEEE transactions on Nanotechnology 4 (6), 715-721, 2005
Nonequilibrium green's function treatment of phonon scattering in carbon-nanotube transistors
SO Koswatta, S Hasan, MS Lundstrom, MP Anantram, DE Nikonov
IEEE Transactions on Electron Devices 54 (9), 2339-2351, 2007
High-frequency performance projections for ballistic carbon-nanotube transistors
S Hasan, S Salahuddin, M Vaidyanathan, MA Alam
IEEE Transactions on Nanotechnology 5 (1), 14-22, 2006
Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at Lg=13nm, including P-TFET and variation considerations
UE Avci, DH Morris, S Hasan, R Kotlyar, R Kim, R Rios, DE Nikonov, ...
2013 IEEE International Electron Devices Meeting, 33.4. 1-33.4. 4, 2013
Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias
SO Koswatta, S Hasan, MS Lundstrom, MP Anantram, DE Nikonov
Applied Physics Letters 89 (2), 023125, 2006
Understanding the feasibility of scaled III–V TFET for logic by bridging atomistic simulations and experimental results
UE Avci, S Hasan, DE Nikonov, R Rios, K Kuhn, IA Young
2012 Symposium on VLSI Technology (VLSIT), 183-184, 2012
Device design and manufacturing issues for 10 nm-scale MOSFETs: a computational study
S Hasan, J Wang, M Lundstrom
Solid-State Electronics 48 (6), 867-875, 2004
Simulation of carbon nanotube FETs including hot-phonon and self-heating effects
S Hasan, MA Alam, MS Lundstrom
IEEE Transactions on Electron Devices 54 (9), 2352-2361, 2007
Effects of surface orientation on the performance of idealized III–V thin-body ballistic n-MOSFETs
R Kim, T Rakshit, R Kotlyar, S Hasan, CE Weber
IEEE electron device letters 32 (6), 746-748, 2011
Study of TFET non-ideality effects for determination of geometry and defect density requirements for sub-60mV/dec Ge TFET
UE Avci, B Chu-Kung, A Agrawal, G Dewey, V Le, R Rios, DH Morris, ...
2015 IEEE International Electron Devices Meeting (IEDM), 34.5. 1-34.5. 4, 2015
Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs
R Ravishankar, G Kathawala, U Ravaioli, S Hasan, M Lundstrom
Journal of Computational Electronics 4, 39-43, 2005
Monte Carlo simulation of carbon nanotube devices
S Hasan, J Guo, M Vaidyanathan, MA Alam, M Lundstrom
Journal of computational electronics 3, 333-336, 2004
Fettoy 2.0-on line tool, 14 February 2006
A Rahman, J Wang, J Guo, S Hasan, Y Liu, A Matsudaira, SS Ahmed, ...
Electron phonon interaction in carbon nanotube devices
S Hasan
Purdue University, 2006
The role of self-heating and hot-phonons in metallic single walled carbon nanotubes
S Hasan, A Alam, M Lundstrom
arXiv preprint cond-mat/0602366, 2006
Phonon scattering in Carbon Nanotube Field Effect Transistors--an NEGF Treatment.
S Koswatta, S Hasan, M Lundstrom, MP Anantram, D Nikonov
APS March Meeting Abstracts, U18. 005, 2006
Identification of Key Challenges in Design and Fabrication of 10nm Scale MOSFETs Using a Two Dimensional Quantum Simulator
S Hasan, M Lundstrom
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