| Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures I Mahaboob, K Hogan, SW Novak, F Shahedipour-Sandvik, RP Tompkins, ... Journal of Vacuum Science & Technology B 36 (3), 2018 | 26 | 2018 |
| Visible-blind APD heterostructure design with superior field confinement and low operating voltage J Bulmer, P Suvarna, J Leathersich, J Marini, I Mahaboob, N Newman, ... IEEE Photonics Technology Letters 28 (1), 39-42, 2015 | 26 | 2015 |
| Polarization engineered N-polar Cs-free GaN photocathodes J Marini, I Mahaboob, E Rocco, LD Bell, F Shahedipour-Sandvik Journal of Applied Physics 124 (11), 2018 | 25 | 2018 |
| MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density J Marini, J Leathersich, I Mahaboob, J Bulmer, N Newman, ... Journal of Crystal Growth 442, 25-30, 2016 | 25 | 2016 |
| Hillock assisted p-type enhancement in N-polar GaN:Mg flms grown by MOCVD E Rocco, I Mahaboob, K Hogan, T Sean Scientific Reports 10 (1426), 2020 | 21 | 2020 |
| Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-diode based Back-gate I Mahaboob, M Yakimov, K Hogan, E Rocco, S Tozier, ... IEEE Journal of the Electron Devices Society 7 (1), 581 - 588, 2019 | 20 | 2019 |
| Ion implantation-based edge termination to improve III-N APD reliability and performance P Suvarna, J Bulmer, JM Leathersich, J Marini, I Mahaboob, J Hennessy, ... IEEE Photonics Technology Letters 27 (5), 498-501, 2014 | 19 | 2014 |
| Selective area epitaxial growth of stretchable geometry AlGaN-GaN heterostructures I Mahaboob, J Marini, K Hogan, E Rocco, RP Tompkins, N Lazarus, ... Journal of Electronic Materials 47, 6625-6634, 2018 | 18 | 2018 |
| Mg incorporation efficiency in pulsed MOCVD of N-polar GaN: Mg J Marini, I Mahaboob, K Hogan, S Novak, LD Bell, ... Journal of Electronic Materials 46 (10), 5820-5826, 2017 | 17 | 2017 |
| Electrical properties of AlGaN/GaN HEMTs in stretchable geometries RP Tompkins, I Mahaboob, F Shahedipour-Sandvik, N Lazarus Solid-State Electronics 136, 36-42, 2017 | 16 | 2017 |
| Mechanical analysis of stretchable AlGaN/GaN high electron mobility transistors RP Tompkins, I Mahaboob, S Shahedipour-Sandvik, N Lazarus ECS Transactions 72 (5), 89, 2016 | 12 | 2016 |
| Drain-Voltage-Induced Secondary Effects in AlGaN/GaN HEMTs With Integrated Body-Diode I Mahaboob, M Yakimov, E Rocco, K Hogan, FS Shahedipour-Sandvik IEEE Transactions on Electron Devices, 2020 | 7 | 2020 |
| Investigation of the electrical behavior of AlGaN/GaN high electron mobility transistors grown with underlying GaN: Mg layer I Mahaboob, SW Novak, E Rocco, K Hogan, F Shahedipour-Sandvik Journal of Vacuum Science & Technology B 38 (6), 2020 | 5 | 2020 |
| Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching V Meyers, E Rocco, K Hogan, S Tozier, B McEwen, I Mahaboob, ... Journal of Electronic Materials 49, 3481-3489, 2020 | 5 | 2020 |
| Impurity incorporation and diffusion from regrowth interfaces in N-polar GaN photocathodes and the impact on quantum efficiency E Rocco, I Mahaboob, K Hogan, V Meyers, B McEwen, LD Bell, ... Journal of Applied Physics 129 (19), 2021 | 4 | 2021 |
| Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor I Mahaboob, RJ Reinertsen, B McEwen, K Hogan, E Rocco, JA Melendez, ... Experimental Biology and Medicine 246 (5), 523-528, 2021 | 4 | 2021 |
| Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface B McEwen, I Mahaboob, E Rocco, K Hogan, V Meyers, R Green, ... Journal of Electronic Materials 50, 80-84, 2021 | 4 | 2021 |
| Novel gyrotron beam annealing method for Mg-implanted bulk GaN K Hogan, S Tozier, E Rocco, I Mahaboob, V Meyers, B McEwen, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 4 | 2019 |
| Enhanced p-type conductivity in N-polar GaN photocathode structures and correlation with GaN hillock density (Conference Presentation) E Rocco, I Mahaboob, K Hogan, S Tozier, V Meyers, B McEwen, S Novak, ... Gallium Nitride Materials and Devices XIV 10918, 109180Y, 2019 | 1 | 2019 |
| A-plane GaN epitaxial lateral overgrowth structures: growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy … K Hogan, S Metzner, F Bertram, I Mahaboob, E Rocco, ... Gallium Nitride Materials and Devices XIII 10532, 105320V, 2018 | 1 | 2018 |
F. Shadi Shahedipour-SandvikSUNY College of Nanoscale Science and EngineeringVerified email at sunypoly.edu
