| Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE DV Nechaev, PA Aseev, VN Jmerik, PN Brunkov, YV Kuznetsova, ... Journal of crystal growth 378, 319-322, 2013 | 71 | 2013 |
| Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring VN Jmerik, AM Mizerov, DV Nechaev, PA Aseev, AA Sitnikova, ... Journal of crystal growth 354 (1), 188-192, 2012 | 60 | 2012 |
| Plasma-assisted molecular beam epitaxy of Al (Ga) N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3 SV Ivanov, DV Nechaev, AA Sitnikova, VV Ratnikov, MA Yagovkina, ... Semiconductor Science and Technology 29 (8), 084008, 2014 | 54 | 2014 |
| E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW SV Ivanov, VN Jmerik, DV Nechaev, VI Kozlovsky, MD Tiberi physica status solidi (a) 212 (5), 1011-1016, 2015 | 36 | 2015 |
| High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3 VN Jmerik, DV Nechaev, AA Toropov, EA Evropeitsev, VI Kozlovsky, ... Applied Physics Express 11 (9), 091003, 2018 | 35 | 2018 |
| Strongly confined excitons in GaN/AlN nanostructures with atomically thin GaN layers for efficient light emission in deep-ultraviolet AA Toropov, EA Evropeitsev, MO Nestoklon, DS Smirnov, TV Shubina, ... Nano Letters 20 (1), 158-165, 2019 | 29 | 2019 |
| Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al2O3 templates grown by PA MBE DV Nechaev, OA Koshelev, VV Ratnikov, PN Brunkov, AV Myasoedov, ... Superlattices and Microstructures 138, 106368, 2020 | 22 | 2020 |
| Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux-and temperature-modulated techniques VN Jmerik, DV Nechaev, S Rouvimov, VV Ratnikov, PS Kop'ev, ... Journal of Materials Research 30 (19), 2871-2880, 2015 | 22 | 2015 |
| Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra V Davydov, E Roginskii, Y Kitaev, A Smirnov, I Eliseyev, D Nechaev, ... Nanomaterials 11 (2), 286, 2021 | 20 | 2021 |
| Kinetics of metal-rich PA molecular beam epitaxy of AlGaN heterostructures for mid-UV photonics VN Jmerik, DV Nechaev, SV Ivanov Molecular beam epitaxy, 135-179, 2018 | 20 | 2018 |
| Pulsed growth techniques in plasma-assisted molecular beam epitaxy of AlxGa1− xN layers with medium Al content (x= 0.4–0.6) DV Nechaev, PN Brunkov, SI Troshkov, VN Jmerik, SV Ivanov Journal of Crystal Growth 425, 9-12, 2015 | 19 | 2015 |
| Suppression of the quantum-confined Stark effect in AlxGa1− xN/AlyGa1− yN corrugated quantum wells AA Toropov, EA Shevchenko, TV Shubina, VN Jmerik, DV Nechaev, ... Journal of Applied Physics 114 (12), 2013 | 14 | 2013 |
| Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates EV Lutsenko, NV Rzheutskii, VN Pavlovskii, GP Yablonskii, DV Nechaev, ... Physics of the Solid State 55, 2173-2181, 2013 | 11 | 2013 |
| Monolayer-scale gan/aln multiple quantum wells for high power e-beam pumped uv-emitters in the 240–270 nm spectral range V Jmerik, D Nechaev, K Orekhova, N Prasolov, V Kozlovsky, D Sviridov, ... Nanomaterials 11 (10), 2553, 2021 | 10 | 2021 |
| Stress control in thick AlN/c-Al2O3 templates grown by plasma-assisted molecular beam epitaxy OA Koshelev, DV Nechaev, PN Brunkov, SV Ivanov, VN Jmerik Semiconductor Science and Technology 36 (3), 035007, 2021 | 10 | 2021 |
| Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental and ab initio analysis A Kaminska, K Koronski, P Strak, A Wierzbicka, M Sobanska, K Klosek, ... Applied Physics Letters 117 (23), 2020 | 10 | 2020 |
| Direct observation of spatial distribution of carrier localization sites in ultrathin GaN/AlN quantum wells by spreading resistance microscopy DE Sviridov, VN Jmerik, S Rouvimov, DV Nechaev, VI Kozlovsky, ... Applied Physics Letters 114 (6), 2019 | 10 | 2019 |
| Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates VN Jmerik, NV Kuznetsova, DV Nechaev, TV Shubina, DA Kirilenko, ... Journal of Crystal Growth 477, 207-211, 2017 | 10 | 2017 |
| Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy DS Zolotukhin, DV Nechaev, SV Ivanov, VN Zhmerik Technical Physics Letters 43, 262-266, 2017 | 10 | 2017 |
| Solar-blind Al x Ga1–x N (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter NV Kuznetsova, DV Nechaev, NM Shmidt, SY Karpov, NV Rzheutskii, ... Technical Physics Letters 42, 635-638, 2016 | 8 | 2016 |
