| Bipolar Nonlinear Selector for 1S1R Crossbar Array Applications JJ Huang, YM Tseng, CW Hsu, TH Hou IEEE Electron Device Letters 32 (10), 1427-1429, 2011 | 220 | 2011 |
| One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications JJ Huang, YM Tseng, WC Luo, CW Hsu, TH Hou 2011 international electron devices meeting, 31.7. 1-31.7. 4, 2011 | 147 | 2011 |
| Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou 2013 Symposium on VLSI Technology, T166-T167, 2013 | 140 | 2013 |
| 3D synaptic architecture with ultralow sub-10 fJ energy per spike for neuromorphic computation IT Wang, YC Lin, YF Wang, CW Hsu, TH Hou 2014 IEEE international electron devices meeting, 28.5. 1-28.5. 4, 2014 | 110 | 2014 |
| Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory CW Hsu, YF Wang, CC Wan, IT Wang, CT Chou, WL Lai, YJ Lee, TH Hou Nanotechnology 25 (16), 165202, 2014 | 91 | 2014 |
| 3D resistive RAM cell design for high-density storage class memory—a review B Hudec, CW Hsu, IT Wang, WL Lai, CC Chang, T Wang, K Fröhlich, ... Science China Information Sciences 59, 1-21, 2016 | 65 | 2016 |
| Flexible one diode–one resistor crossbar resistive-switching memory JJ Huang, TH Hou, CW Hsu, YM Tseng, WH Chang, WY Jang, CH Lin Japanese journal of applied physics 51 (4S), 04DD09, 2012 | 58 | 2012 |
| 3D vertical TaOx/TiO2RRAM with over 103self-rectifying ratio and sub-μA operating current CW Hsu, CC Wan, IT Wang, MC Chen, CL Lo, YJ Lee, WY Jang, CH Lin, ... 2013 IEEE International Electron Devices Meeting, 10.4. 1-10.4. 4, 2013 | 55 | 2013 |
| Bipolar RRAM With Multilevel States and Self-Rectifying Characteristics CW Hsu, TH Hou, MC Chen, IT Wang, CL Lo IEEE electron device letters 34 (7), 885-887, 2013 | 51 | 2013 |
| Crossbar array of selector-less TaOx/TiO2 bilayer RRAM CT Chou, B Hudec, CW Hsu, WL Lai, CC Chang, TH Hou Microelectronics Reliability 55 (11), 2220-2223, 2015 | 34 | 2015 |
| Categorization of Multilevel-Cell Storage-Class Memory: An RRAM Example JC Liu, CW Hsu, I Wang, TH Hou IEEE TRANSACTIONS ON ELECTRON DEVICES 62 (8), 2510, 2015 | 23 | 2015 |
| Self-rectifying RRAM cell structure and 3D crossbar array architecture thereof TH Hou, CW Hsu, IT Wang US Patent 9,059,391, 2015 | 12 | 2015 |
| Self-rectifying RRAM cell structure having two resistive switching layers with different bandgaps and RRAM 3D crossbar array architecture TH Hou, CW Hsu, C Chun-Tse, LAI Wei-Li US Patent 10,056,432, 2018 | 11 | 2018 |
| Investigating MLC variation of filamentary and non-filamentary RRAM JC Liu, IT Wang, CW Hsu, WC Luo, TH Hou Proceedings of Technical Program-2014 International Symposium on VLSI …, 2014 | 5 | 2014 |
| Self-rectifying resistive random access memory cell structure TH Hou, CW Hsu, C Chun-Tse US Patent 9,978,941, 2018 | 4 | 2018 |
| Statistical study of RRAM MLC SET variability induced by filament morphology CW Hsu, X Zheng, Y Wu, TH Hou, HSP Wong 2017 IEEE International Reliability Physics Symposium (IRPS), 5A-3.1-5A-3.5, 2017 | 2 | 2017 |
| Interface engineering in homogeneous barrier modulation RRAM for 3D vertical memory applications WL Lai, CT Chou, CW Hsu, JC Liu, B Hudec, CH Ho, WY Jang, CH Lin, ... Proceedings of International Conference on Solid State Devices and Materials …, 2014 | 1 | 2014 |
| Resistive memory apparatus and write-in method thereof TH Hou, CW Hsu, MC Chen US Patent 9,269,434, 2016 | | 2016 |
| 非線性電阻式記憶體於三維超高密度儲存級記憶體之應用 CW Hsu 國立交通大學, 2015 | | 2015 |
| Homogeneous barrier modulation of TaO {sub x}/TiO {sub 2} bilayers for ultra-high endurance three-dimensional storage-class memory CW Hsu, YF Wang, CC Wan, I Wang, CT Chou, WL Lai, TH Hou, YJ Lee Nanotechnology (Print) 25, 2014 | | 2014 |
Tuo-Hung (Alex) HouInstitute of Electronics; National Yang Ming Chiao Tung UniversityVerified email at nycu.edu.tw
