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Chung Wei Hsu
Chung Wei Hsu
Department of Electronics Engineering, National Chiao Tung University
Verified email at nctu.edu.tw
Title
Cited by
Cited by
Year
Bipolar Nonlinear Selector for 1S1R Crossbar Array Applications
JJ Huang, YM Tseng, CW Hsu, TH Hou
IEEE Electron Device Letters 32 (10), 1427-1429, 2011
2202011
One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications
JJ Huang, YM Tseng, WC Luo, CW Hsu, TH Hou
2011 international electron devices meeting, 31.7. 1-31.7. 4, 2011
1472011
Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory
CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou
2013 Symposium on VLSI Technology, T166-T167, 2013
1402013
3D synaptic architecture with ultralow sub-10 fJ energy per spike for neuromorphic computation
IT Wang, YC Lin, YF Wang, CW Hsu, TH Hou
2014 IEEE international electron devices meeting, 28.5. 1-28.5. 4, 2014
1102014
Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory
CW Hsu, YF Wang, CC Wan, IT Wang, CT Chou, WL Lai, YJ Lee, TH Hou
Nanotechnology 25 (16), 165202, 2014
912014
3D resistive RAM cell design for high-density storage class memory—a review
B Hudec, CW Hsu, IT Wang, WL Lai, CC Chang, T Wang, K Fr÷hlich, ...
Science China Information Sciences 59, 1-21, 2016
652016
Flexible one diode–one resistor crossbar resistive-switching memory
JJ Huang, TH Hou, CW Hsu, YM Tseng, WH Chang, WY Jang, CH Lin
Japanese journal of applied physics 51 (4S), 04DD09, 2012
582012
3D vertical TaOx/TiO2RRAM with over 103self-rectifying ratio and sub-μA operating current
CW Hsu, CC Wan, IT Wang, MC Chen, CL Lo, YJ Lee, WY Jang, CH Lin, ...
2013 IEEE International Electron Devices Meeting, 10.4. 1-10.4. 4, 2013
552013
Bipolar RRAM With Multilevel States and Self-Rectifying Characteristics
CW Hsu, TH Hou, MC Chen, IT Wang, CL Lo
IEEE electron device letters 34 (7), 885-887, 2013
512013
Crossbar array of selector-less TaOx/TiO2 bilayer RRAM
CT Chou, B Hudec, CW Hsu, WL Lai, CC Chang, TH Hou
Microelectronics Reliability 55 (11), 2220-2223, 2015
342015
Categorization of Multilevel-Cell Storage-Class Memory: An RRAM Example
JC Liu, CW Hsu, I Wang, TH Hou
IEEE TRANSACTIONS ON ELECTRON DEVICES 62 (8), 2510, 2015
232015
Self-rectifying RRAM cell structure and 3D crossbar array architecture thereof
TH Hou, CW Hsu, IT Wang
US Patent 9,059,391, 2015
122015
Self-rectifying RRAM cell structure having two resistive switching layers with different bandgaps and RRAM 3D crossbar array architecture
TH Hou, CW Hsu, C Chun-Tse, LAI Wei-Li
US Patent 10,056,432, 2018
112018
Investigating MLC variation of filamentary and non-filamentary RRAM
JC Liu, IT Wang, CW Hsu, WC Luo, TH Hou
Proceedings of Technical Program-2014 International Symposium on VLSIá…, 2014
52014
Self-rectifying resistive random access memory cell structure
TH Hou, CW Hsu, C Chun-Tse
US Patent 9,978,941, 2018
42018
Statistical study of RRAM MLC SET variability induced by filament morphology
CW Hsu, X Zheng, Y Wu, TH Hou, HSP Wong
2017 IEEE International Reliability Physics Symposium (IRPS), 5A-3.1-5A-3.5, 2017
22017
Interface engineering in homogeneous barrier modulation RRAM for 3D vertical memory applications
WL Lai, CT Chou, CW Hsu, JC Liu, B Hudec, CH Ho, WY Jang, CH Lin, ...
Proceedings of International Conference on Solid State Devices and Materialsá…, 2014
12014
Resistive memory apparatus and write-in method thereof
TH Hou, CW Hsu, MC Chen
US Patent 9,269,434, 2016
2016
非線性電阻式記憶體於三維超高密度儲存級記憶體之應用
CW Hsu
國立交通大學, 2015
2015
Homogeneous barrier modulation of TaO {sub x}/TiO {sub 2} bilayers for ultra-high endurance three-dimensional storage-class memory
CW Hsu, YF Wang, CC Wan, I Wang, CT Chou, WL Lai, TH Hou, YJ Lee
Nanotechnology (Print) 25, 2014
2014
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