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Stephanie A. Bojarski
Stephanie A. Bojarski
Intel Corporation
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Cited by
Cited by
Year
Qubits made by advanced semiconductor manufacturing
AMJ Zwerver, T Krähenmann, TF Watson, L Lampert, HC George, ...
Nature Electronics 5 (3), 184-190, 2022
2112022
Expanding time–temperature-transformation (TTT) diagrams to interfaces: A new approach for grain boundary engineering
PR Cantwell, S Ma, SA Bojarski, GS Rohrer, MP Harmer
Acta Materialia 106, 78-86, 2016
602016
Influence of grain boundary energy on the nucleation of complexion transitions
SA Bojarski, MP Harmer, GS Rohrer
Scripta Materialia 88, 1-4, 2014
422014
Changes in the grain boundary character and energy distributions resulting from a complexion transition in Ca-doped yttria
SA Bojarski, S Ma, W Lenthe, MP Harmer, GS Rohrer
Metallurgical and Materials Transactions A 43, 3532-3538, 2012
412012
Influence of Y and La additions on grain growth and the grain‐boundary character distribution of alumina
SA Bojarski, M Stuer, Z Zhao, P Bowen, GS Rohrer
Journal of the American Ceramic Society 97 (2), 622-630, 2014
392014
High volume electrical characterization of semiconductor qubits
R Pillarisetty, HC George, TF Watson, L Lampert, N Thomas, S Bojarski, ...
2019 IEEE International Electron Devices Meeting (IEDM), 31.5. 1-31.5. 4, 2019
322019
Backside contacts for semiconductor devices
AD Lilak, E Mannebach, A Phan, RE Schenker, SA Bojarski, W Rachmady, ...
US Patent 11,437,283, 2022
312022
The temperature dependence of the relative grain‐boundary energy of yttria‐doped alumina
MN Kelly, SA Bojarski, GS Rohrer
Journal of the American Ceramic Society 100 (2), 783-791, 2017
302017
Resistance and electromigration performance of 6 nm wires
JS Chawla, SH Sung, SA Bojarski, CT Carver, M Chandhok, RV Chebiam, ...
2016 IEEE International Interconnect Technology Conference/Advanced …, 2016
252016
The relationship between grain boundary energy, grain boundary complexion transitions, and grain size in Ca-doped Yttria
SA Bojarski, J Knighting, SL Ma, W Lenthe, MP Harmer, GS Rohrer
Materials Science Forum 753, 87-92, 2013
222013
Nickel silicide for interconnects
KL Lin, SA Bojarski, CT Carver, M Chandhok, JS Chawla, JS Clarke, ...
2015 IEEE International Interconnect Technology Conference and 2015 IEEE …, 2015
212015
Eutaxial growth of hematite Fe2O3 films on perovskite SrTiO3 polycrystalline substrates
AM Schultz, Y Zhu, SA Bojarski, GS Rohrer, PA Salvador
Thin Solid Films 548, 220-224, 2013
192013
Self-aligned via below subtractively patterned interconnect
M Chandhok, RE Schenker, HJ Yoo, KL Lin, JS Chawla, SA Bojarski, ...
US Patent 10,546,772, 2020
132020
Aligned pitch-quartered patterning for lithography edge placement error advanced rectification
CH Wallace, M Chandhok, PA Nyhus, E Han, SA Bojarski, F Gstrein, ...
US Patent App. 16/068,095, 2019
92019
Quantitative differences in the Y grain boundary excess at boundaries delimiting large and small grains in Y doped Al2O3
H Sternlicht, SA Bojarski, GS Rohrer, WD Kaplan
Journal of the European Ceramic Society 38 (4), 1829-1835, 2018
92018
Probing single electrons across 300 mm spin qubit wafers
S Neyens, O Zietz, T Watson, F Luthi, A Nethwewala, H George, E Henry, ...
arXiv preprint arXiv:2307.04812, 2023
52023
Vertically stacked transistor devices with isolation wall structures containing an electrical conductor
AD Lilak, A Phan, P Morrow, SA Bojarski
US Patent 11,257,738, 2022
52022
Self-aligned local interconnects
AD Lilak, E Mannebach, A Phan, R Schenker, SA Bojarski, W Rachmady, ...
US Patent 11,424,160, 2022
42022
Integrated quantum circuit assemblies for cooling apparatus
L Lampert, R Pillarisetty, NK Thomas, HC George, JM Roberts, ...
US Patent 11,011,693, 2021
42021
Author Correction: Qubits made by advanced semiconductor manufacturing (Nature Electronics,(2022), 5, 3,(184-190), 10.1038/s41928-022-00727-9)
AMJ Zwerver, T Krähenmann, TF Watson, L Lampert, HC George, ...
Nature Electronics, 2022
32022
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