Felice Crupi
Felice Crupi
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A 2.6 nW, 0.45 V temperature-compensated subthreshold CMOS voltage reference
L Magnelli, F Crupi, P Corsonello, C Pace, G Iannaccone
IEEE Journal of Solid-State Circuits 46 (2), 465-474, 2010
Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks
P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers
F Crupi, R Degraeve, G Groeseneken, T Nigam, HE Maes
IEEE Transactions on Electron Devices 45 (11), 2329-2334, 1998
Impact strain engineering on gate stack quality and reliability
C Claeys, E Simoen, S Put, G Giusi, F Crupi
Solid-State Electronics 52 (8), 1115-1126, 2008
Degradation and hard breakdown transient of thin gate oxides in capacitors: Dependence on oxide thickness
S Lombardo, A La Magna, C Spinella, C Gerardi, F Crupi
Journal of applied physics 86 (11), 6382-6391, 1999
Design of a 75‐nW, 0.5‐V subthreshold complementary metal–oxide–semiconductor operational amplifier
L Magnelli, FA Amoroso, F Crupi, G Cappuccino, G Iannaccone
International Journal of Circuit Theory and Applications 42 (9), 967-977, 2014
Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/bulk trap density in a SiO/sub 2//HfO/sub 2/stack
F Crupi, R Degraeve, A Kerber, DH Kwak, G Groeseneken
2004 IEEE International Reliability Physics Symposium. Proceedings, 181-187, 2004
An ultralow-voltage energy-efficient level shifter
M Lanuzza, F Crupi, S Rao, R De Rose, S Strangio, G Iannaccone
IEEE Transactions on Circuits and Systems II: Express Briefs 64 (1), 61-65, 2016
Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells
S Strangio, P Palestri, D Esseni, L Selmi, F Crupi, S Richter, QT Zhao, ...
IEEE Journal of the Electron Devices Society 3 (3), 223-232, 2015
Mixed tunnel-FET/MOSFET level shifters: A new proposal to extend the tunnel-FET application domain
M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni
IEEE Transactions on Electron Devices 62 (12), 3973-3979, 2015
Electrical and thermal transient during dielectric breakdown of thin oxides in metal--silicon capacitors
S Lombardo, F Crupi, A La Magna, C Spinella, A Terrasi, A La Mantia, ...
Journal of applied physics 84 (1), 472-479, 1998
Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks
F Crupi, P Srinivasan, P Magnone, E Simoen, C Pace, D Misra, C Claeys
IEEE Electron Device Letters 27 (8), 688-691, 2006
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics
G Giusi, F Crupi, C Pace, C Ciofi, G Groeseneken
IEEE Transactions on Electron Devices 53 (4), 823-828, 2006
A Sub-Voltage Reference Operating at 150 mV
D Albano, F Crupi, F Cucchi, G Iannaccone
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 23 (8á…, 2014
Structural and electrical analysis of the atomic layer deposition of capacitors with and without an interface control layer
A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 052904, 2010
Impact of hot carriers on nMOSFET variability in 45-and 65-nm CMOS technologies
P Magnone, F Crupi, N Wils, R Jain, H Tuinhout, P Andricciola, G Giusi, ...
IEEE Transactions on Electron Devices 58 (8), 2347-2353, 2011
Understanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits
F Settino, M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni, L Selmi
IEEE Transactions on Electron Devices 64 (6), 2736-2743, 2017
On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge Junctions
E Simoen, F De Stefano, G Eneman, B De Jaeger, C Claeys, F Crupi
IEEE Electron Device Letters 30 (5), 562-564, 2009
Digital and analog TFET circuits: Design and benchmark
S Strangio, F Settino, P Palestri, M Lanuzza, F Crupi, D Esseni, L Selmi
Solid-State Electronics 146, 50-65, 2018
Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
LM Procel, L Trojman, J Moreno, F Crupi, V Maccaronio, R Degraeve, ...
Journal of Applied Physics 114 (7), 074509, 2013
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